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71. 发明申请

US20110318498A1 Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof 有权
标题翻译：同轴空心阴极等离子体辅助导向气相沉积及其相关方法
公开(公告)号：US20110318498A1
公开(公告)日：2011-12-29
申请号：US13202828
申请日：2010-02-24
申请人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
发明人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
IPC分类号： C23C16/50 , C23C16/52 , C23C16/515 , C23C16/503 , C23C16/48
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
摘要翻译：通常对气相沉积方法进行更优化的等离子体生成方法，特别是用于定向气相沉积处理。这种方法的特征使得能够稳定和可靠地同轴等离子体能力，其中等离子体射流与蒸气羽流同轴，而不是产生先前缺点的正交构造。以这种方式，可以避免先前由空心阴极管的工作气体流引起的蒸汽气体射流的变形，并且可以显着地减少用于成形蒸气羽流所需的载气消耗。

72. 发明申请

US20110308461A1 Electron Beam Enhanced Nitriding System (EBENS) 审中-公开
标题翻译：电子束增强氮化系统（EBENS）
公开(公告)号：US20110308461A1
公开(公告)日：2011-12-22
申请号：US12857560
申请日：2010-08-17
申请人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
发明人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
IPC分类号： C23C8/24 , C23C8/26 , C23C8/36
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译：电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。衬底可以安装在电极上，并且衬底可被偏置和加热。

73. 发明授权

US07866278B2 Thin-film deposition system 有权
标题翻译：薄膜沉积系统
公开(公告)号：US07866278B2
公开(公告)日：2011-01-11
申请号：US12122781
申请日：2008-05-19
申请人： Toru Takashima , Yoshikazu Homma
发明人： Toru Takashima , Yoshikazu Homma
IPC分类号： C23C16/00 , C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： C23C14/32 , H01J37/32009 , H01J37/3233 , H01J37/32357
摘要： A thin-film deposition system has a vacuum chamber and a plasma generator. The plasma generator includes a case, a cathode disposed in the case, an anode assembly disposed at an end of the case, a discharge power supply for applying a discharge voltage between the cathode and the anode assembly, and a gas supply means for supplying a discharge gas into the case. Electrons within a first plasma produced in the case are extracted into the vacuum chamber according to the discharge voltage. An evaporated material in a gaseous state inside the vacuum chamber is irradiated with electrons emitted from the plasma generator to produce a second plasma. The potential at the anode assembly is controlled by anode potential-controlling means such that the electrons within the second plasma are directed at the plasma generator and the ions within the second plasma are directed at the substrate.
摘要翻译：薄膜沉积系统具有真空室和等离子体发生器。等离子体发生器包括壳体，设置在壳体中的阴极，设置在壳体的端部的阳极组件，用于在阴极和阳极组件之间施加放电电压的放电电源，以及用于提供将气体排放到壳体内。在这种情况下产生的第一等离子体内的电子根据放电电压被提取到真空室中。在真空室内的气态蒸发材料被从等离子体发生器发射的电子照射以产生第二等离子体。阳极组件处的电位由阳极电位控制装置控制，使得第二等离子体内的电子被引导到等离子体发生器，并且第二等离子体内的离子被引导到衬底。

74. 发明授权

US07569484B2 Plasma and electron beam etching device and method 失效
标题翻译：等离子体和电子束蚀刻装置及方法
公开(公告)号：US07569484B2
公开(公告)日：2009-08-04
申请号：US11503762
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/4763
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

75. 发明申请

US20080245478A1 Surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080245478A1
公开(公告)日：2008-10-09
申请号：US12081913
申请日：2008-04-23
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32706 , H01J37/32009 , H01J37/3233 , H05H1/2406 , H05H2001/2412
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理对象的下游端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的上游侧的激发粒子供给系统，被配置为在被处理体的主体内供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极上施加10 -7至10 -6的主脉冲占空比，以在第一主电极和第二主电极中产生非热平衡等离子体流在处理对象内部，从而处理对象的内表面。

76. 发明申请

US20080156771A1 ETCHING APPARATUS USING NEUTRAL BEAM AND METHOD THEREOF 审中-公开
标题翻译：使用中性光束的蚀刻装置及其方法
公开(公告)号：US20080156771A1
公开(公告)日：2008-07-03
申请号：US11965956
申请日：2007-12-28
申请人： Yun Kwang JEON , Jin Seok Lee , Yung Hee Lee , Gi Tae Kim
发明人： Yun Kwang JEON , Jin Seok Lee , Yung Hee Lee , Gi Tae Kim
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/3233 , H01J37/32357
摘要： An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.
摘要翻译：使用中性光束的蚀刻装置包括电子发射单元，用于通过使离子束与电子碰撞来将通过多个栅极从等离子体提取的离子束转换成中性束，以防止离子束与电子发射物理碰撞单元，从而防止中和单元的损坏和结构简单的异物的产生。此外，蚀刻装置以高中和效率将离子束转换成中性光束，而不引起方向性和能量损失，并且产生具有大面积的中性光束，因此均匀地蚀刻半导体晶片。

77. 发明申请

US20080078957A1 Methods for beam current modulation by ion source parameter modulation 有权
标题翻译：离子源参数调制的束电流调制方法
公开(公告)号：US20080078957A1
公开(公告)日：2008-04-03
申请号：US11541087
申请日：2006-09-29
申请人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
发明人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
IPC分类号： H01J37/08
CPC分类号： H01J37/3233 , H01J37/08 , H01J37/304 , H01J37/3171 , H01J37/32357 , H01J37/32935 , H01J2237/0817 , H01J2237/082 , H01J2237/24535 , H01J2237/30472 , H01J2237/31701 , H01L21/265
摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
摘要翻译：通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。确定射束电流调节量。然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。提供具有调制束电流的束电流。

78. 发明申请

US20080023440A1 Method and system for controlling the uniformity of a ballistic electron beam by RF modulation 有权
标题翻译：通过RF调制控制弹道电子束的均匀性的方法和系统
公开(公告)号：US20080023440A1
公开(公告)日：2008-01-31
申请号：US11495726
申请日：2006-07-31
申请人： Lee Chen , Ping Jiang
发明人： Lee Chen , Ping Jiang
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01J37/3233 , B05D3/145 , H01J37/32009
摘要： A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio frequency (RF) power. For example, a plasma processing system is described having a first RF power coupled to a lower electrode, which may support the substrate, a second RF power coupled to an upper electrode that opposes the lower electrode, and a negative high voltage direct current (DC) power coupled to the upper electrode to form the ballistic electron beam. The amplitude of the second RF power is modulated to affect changes in the uniformity of the ballistic electron beam flux.
摘要翻译：描述了使用弹道电子束处理衬底的方法和系统，由此通过调制源射频（RF）功率来调节电子束通量的径向均匀性。例如，描述了等离子体处理系统，其具有耦合到可以支撑衬底的下电极的第一RF功率，耦合到与下电极相对的上电极的第二RF功率和负的高电压直流（DC ）功率耦合到上电极以形成弹道电子束。调制第二RF功率的幅度以影响弹道电子束通量的均匀性的变化。

79. 发明申请

US20070272663A1 Microwave plasma generator 有权
标题翻译：微波等离子发生器
公开(公告)号：US20070272663A1
公开(公告)日：2007-11-29
申请号：US11439742
申请日：2006-05-24
申请人： Kuan-Jiuh Lin , Jun-Wei Su , Chuen-Yuan Hsu
发明人： Kuan-Jiuh Lin , Jun-Wei Su , Chuen-Yuan Hsu
IPC分类号： B23K9/02
CPC分类号： H01J37/3233 , H01J37/32192
摘要： The present invention discloses a microwave plasma generator which includes a chamber, a conductive inorganic substance, a trace gas and a microwave source. The conductive inorganic substance and the trace gas are housed in the chamber with an inner pressure about 0.001˜10 torr. By irradiating the conductive inorganic substance and exciting the trace gas, clean and uniform plasma will be generated. The plasma generator of this invention is easily operated and can be applied to semiconductor manufacturing processes, for example, material modification, etching/cleaning, roughing and ion doping/hybrid.
摘要翻译：本发明公开了一种微波等离子体发生器，其包括室，导电无机物质，痕量气体和微波源。导电无机物质和痕量气体以约0.001〜10乇的内压收纳在室内。通过照射导电性无机物质和激发痕量气体，将产生清洁均匀的等离子体。本发明的等离子体发生器易于操作，并且可以应用于半导体制造工艺，例如材料改性，蚀刻/清洁，粗加工和离子掺杂/混合。

80. 发明授权

US07147900B2 Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation 有权
标题翻译：用电子束辐射处理的具有低介电常数的含硅绝缘膜的方法
公开(公告)号：US07147900B2
公开(公告)日：2006-12-12
申请号：US10641397
申请日：2003-08-14
申请人： Naoto Tsuji , Atsuki Fukazawa , Nobuo Matsuki , Shingo Ikeda
发明人： Naoto Tsuji , Atsuki Fukazawa , Nobuo Matsuki , Shingo Ikeda
IPC分类号： H05H1/24 , B05D3/06
CPC分类号： C23C16/505 , C23C16/401 , C23C16/56 , H01J37/32082 , H01J37/3233 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/02351 , H01L21/31612
摘要： A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.
摘要翻译：通过使用包括（i）包含含有多个可交联基团的含硅烃化合物的源气体，（ii）交联气体和（ii）交联气体）的反应气体通过等离子体反应在基板上形成含硅绝缘膜， iii）惰性气体，放入放置基板的反应室中。然后将绝缘膜暴露于电子束辐射，从而提高膜的机械强度，而不会导致介电常数的显着变化。

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