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71. 发明授权

US07046337B2 Exposure apparatus and method 有权
标题翻译：曝光装置和方法
公开(公告)号：US07046337B2
公开(公告)日：2006-05-16
申请号：US11229541
申请日：2005-09-20
申请人： Miyoko Kawashima , Akiyoshi Suzuki
发明人： Miyoko Kawashima , Akiyoshi Suzuki
IPC分类号： G03B27/42 , G03B27/52 , G03B27/72
CPC分类号： G03F7/70566 , G03F7/70091 , G03F7/70125 , G03F7/7025 , G03F7/70341 , G03F7/70958
摘要： An exposure method that transfers a pattern formed on a mask onto an object to be exposed via a projection optical system that is at least partly immersed in liquid. The exposure method forms on a pupil of the projection optical system an effective light source that emits, from an axis orthogonal to an optical axis of the projection optical system, light that has an incident angle θ upon the object, wherein the light includes only s-polarized light in an area of an incident angle θ that satisfies 90°−θNA≦θ≦θNA, where θNA is the largest value of the incident angle θ.
摘要翻译：一种曝光方法，其通过至少部分浸没在液体中的投影光学系统将掩模上形成的图案转印到要曝光的物体上。曝光方法在投影光学系统的光瞳上形成有效光源，其从与投影光学系统的光轴正交的轴发射具有对象上的入射角θ的光，其中光仅包括s 入射角度θ的区域中的偏振光，其满足90°-θNA NA，其中θ< 是入射角度θ的最大值。

72. 发明申请

US20060028957A1 Optical system for spatially controlling light polarization and method for manufacturing the same 有权
标题翻译：用于空间控制光偏振的光学系统及其制造方法
公开(公告)号：US20060028957A1
公开(公告)日：2006-02-09
申请号：US11194458
申请日：2005-08-02
申请人： Ho-Chul Kim
发明人： Ho-Chul Kim
IPC分类号： G11B7/00
CPC分类号： G03F7/70158 , G03F7/70125 , G03F7/70566
摘要： An optical system for spatially controlling light polarization, and method for manufacturing the same, includes a light source for generating a light beam of a designated wavelength, a beam shaper for splitting the light beam generated from the light source into a plurality of partial beams, and a polarization controller controlling the polarization states of the partial beams. The polarization controller may be formed on the beam shaper or separate from the beam shaper.
摘要翻译：用于空间控制光偏振的光学系统及其制造方法包括用于产生指定波长的光束的光源，用于将从光源产生的光束分成多个局部光束的光束整形器，以及控制部分光束的偏振状态的偏振控制器。偏振控制器可以形成在光束整形器上或与光束整形器分离。

73. 发明申请

US20060012764A1 Exposure apparatus and method 有权
标题翻译：曝光装置和方法
公开(公告)号：US20060012764A1
公开(公告)日：2006-01-19
申请号：US11229541
申请日：2005-09-20
申请人： Miyoko Kawashima , Akiyoshi Suzuki
发明人： Miyoko Kawashima , Akiyoshi Suzuki
IPC分类号： G03B27/42
CPC分类号： G03F7/70566 , G03F7/70091 , G03F7/70125 , G03F7/7025 , G03F7/70341 , G03F7/70958
摘要： An exposure method immerses, in liquid, a surface of an object to be exposed, and a surface of a projection optical system closest to the object, and projects a repetitive pattern formed on a mask via the projection optical system onto the object. The exposure method forms on a pupil of the projection optical system an effective light source that emits, from an axis orthogonal to an optical axis of the projection optical system, light that is parallel to a repetitive direction of the repetitive pattern and has an incident angle θ upon the object, wherein the light includes only s-polarized light in an area of an incident angle θ that satisfies 90°−θNA≦θ≦θNA, where θNA is the largest value of the incident angle θ.
摘要翻译：曝光方法将待暴露物体的表面和最接近物体的投影光学系统的表面浸没在液体中，并且通过投影光学系统将形成在掩模上的重复图案投影到物体上。曝光方法在投影光学系统的光瞳上形成有效光源，其从与投影光学系统的光轴正交的轴发射平行于重复图案的重复方向的光，并具有入射角 θ，其中光仅在入射角度θ的区域中仅包括s偏振光，该入射角θ满足90°-θNA < ，其中θNA是入射角θ的最大值。

74. 发明授权

US06972836B2 Measuring method of illuminance unevenness of exposure apparatus, correcting method of illuminance unevenness, manufacturing method of semiconductor device, and exposure apparatus 失效
标题翻译：曝光装置的照度不均匀的测量方法，照度不均匀的校正方法，半导体装置的制造方法和曝光装置
公开(公告)号：US06972836B2
公开(公告)日：2005-12-06
申请号：US10131083
申请日：2002-04-25
申请人： Kazuya Sato , Soichi Inoue , Satoshi Tanaka
发明人： Kazuya Sato , Soichi Inoue , Satoshi Tanaka
IPC分类号： G01J1/26 , G03F1/00 , G03F1/70 , G03F7/20 , H01L21/027 , G01J1/00
CPC分类号： G03F7/70125 , G01J1/26 , G03F7/70133
摘要： There is disclosed a measuring method of illuminance unevenness of an exposure apparatus in which the illuminance unevenness resulting from a projection optical system, to project the light passed through the photomask onto the finite area on the photosensitive substrate via the projection optical system and to expose the photomask to the light, the method comprising calculating an average value of transmittance of the projection optical system of each path of the light emitted from one point of the photomask and reaching an imaging point for each of a plurality of imaging points in the finite area on the photosensitive substrate, and calculating the illuminance unevenness in the finite area on the photosensitive substrate from the average value of the transmittance obtained for each imaging point.
摘要翻译：公开了一种曝光装置的照度不均匀性的测量方法，其中由投影光学系统产生的照度不均匀性将通过光掩模的光投影到经由投影光学系统的感光基板上的有限区域上，光掩模，该方法包括计算从光掩模的一个点发射的光的每个路径的投影光学系统的透射率的平均值，并且到达有限区域中的多个成像点中的每一个的成像点感光基板，并且根据对于每个成像点获得的透射率的平均值计算感光基板上的有限区域中的照度不均匀度。

75. 发明授权

US06972831B2 Projection exposure system for microlithography and method for generating microlithographic images 失效
标题翻译：用于微光刻的投影曝光系统和用于产生微光刻图像的方法
公开(公告)号：US06972831B2
公开(公告)日：2005-12-06
申请号：US10984256
申请日：2004-11-09
申请人： Karl-Heinz Schuster , Christian Wagner , Martin Schriever
发明人： Karl-Heinz Schuster , Christian Wagner , Martin Schriever
IPC分类号： G02B19/00 , G02B5/30 , G02B17/08 , G02B27/28 , G03F7/20 , G03F9/00 , H01L21/027 , G03B27/54 , G03B27/42 , G03B27/72
CPC分类号： G02B17/0892 , G02B17/08 , G02B27/28 , G03B27/72 , G03F7/70125 , G03F7/70225 , G03F7/70566
摘要： An arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
摘要翻译：用于在高孔径处的微光刻投影曝光的布置通过垂直于抗蚀剂入射平面的光的偏振实现对比度增加。提供了影响在照明系统和还原目标中适应于偶极子照明的切向偏振或线偏振的布置。

76. 发明申请

US20050213072A1 Lithography using controlled polarization 失效
标题翻译：使用受控极化的平版印刷
公开(公告)号：US20050213072A1
公开(公告)日：2005-09-29
申请号：US10813453
申请日：2004-03-29
申请人： Richard Schenker , Kevin Huggins
发明人： Richard Schenker , Kevin Huggins
IPC分类号： G03B27/72 , G03F7/20
CPC分类号： G03F7/70566 , G03F7/70125
摘要： Lithography using controlled polarization. One aspect generates an electromagnetic radiation suitable for production of microelectronic devices, linearly polarizes at least a portion of the radiation at a pupil plane of a projection system to form linearly polarized radiation, and exposing a substrate using the linearly polarized radiation at a high exposure angle.
摘要翻译：使用受控极化的平版印刷。一个方面产生适合于生产微电子器件的电磁辐射，在投影系统的光瞳平面处线性偏振辐射的至少一部分以形成线偏振辐射，并且以高曝光角度使用线性偏振辐射曝光衬底。

77. 发明申请

US20050196681A1 OPC based illumination optimization with mask error constraints 有权
标题翻译：基于OPC的照明优化与掩模误差约束
公开(公告)号：US20050196681A1
公开(公告)日：2005-09-08
申请号：US10794683
申请日：2004-03-05
申请人： Ebo Croffle , Nicholas Eib , Mario Garza , Paul Filseth , Lav Ivanovic
发明人： Ebo Croffle , Nicholas Eib , Mario Garza , Paul Filseth , Lav Ivanovic
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/705
摘要： A method and system of optimizing the illumination of a mask in a photolithography process. A specific, preferred method includes the steps of: loading minimum design rules of a layout, loading exposure latitude constraints, loading mask error constraints, loading initial illumination conditions, simulating current illumination conditions, obtaining dose-to-print threshold from the minimum design rules (i.e., lines-and-space feature), applying OPC on the layout using the dose-to-print threshold, calculating DOF using the exposure latitude and mask error constraints, changing the illumination conditions in order to attempt to maximize common DOF with the exposure latitude and mask error constraints, and continuing the process until maximum common DOF is obtained.
摘要翻译：一种在光刻工艺中优化掩模照明的方法和系统。具体的，优选的方法包括以下步骤：加载布局的最小设计规则，加载曝光宽容约束，加载掩码误差约束，加载初始照明条件，模拟当前照明条件，从最小设计规则获得剂量到打印阈值（即线和空间特征），使用剂量到打印阈值在布局上应用OPC，使用曝光宽容度和掩模误差约束计算DOF，改变照明条件，以便尝试最大化常见DOF 曝光宽容度和掩模误差约束，并持续该过程，直到获得最大共同DOF。

78. 发明申请

US20050142470A1 Feature optimization using interference mapping lithography 有权
标题翻译：使用干涉映射光刻技术进行特征优化
公开(公告)号：US20050142470A1
公开(公告)日：2005-06-30
申请号：US10975342
申请日：2004-10-29
申请人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
发明人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
IPC分类号： G03F1/14 , G06F17/50 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
摘要翻译：公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧裂片不打印。

79. 发明申请

US20050102648A1 Orientation dependent shielding for use with dipole illumination techniques 有权
标题翻译：用于偶极照明技术的取向屏蔽
公开(公告)号：US20050102648A1
公开(公告)日：2005-05-12
申请号：US10626858
申请日：2003-07-25
申请人： Stephen Hsu , Noel Corcoran , Jang Chen
发明人： Stephen Hsu , Noel Corcoran , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , H01L21/027 , G06F17/50 , G03C5/00 , G21K5/10 , H01J37/08
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.
摘要翻译：一种利用偶极照明在基板上印刷具有垂直定向特征和水平取向特征的图案的方法，其包括以下步骤：识别图案中包含的背景区域; 在背景区域中生成包括不可解决水平定向特征的垂直分量掩模; 在背景区域中生成包括不可解析的垂直取向特征的水平分量掩模; 利用X极照明照亮所述垂直分量掩模; 并利用Y极照明照亮所述水平分量掩模。

80. 发明申请

US20050083507A1 Projection exposure system for microlithography and method for generating microlithographic images 失效
公开(公告)号：US20050083507A1
公开(公告)日：2005-04-21
申请号：US10984256
申请日：2004-11-09
申请人： Karl-Heinz Schuster , Christian Wagner , Martin Schriever
发明人： Karl-Heinz Schuster , Christian Wagner , Martin Schriever
IPC分类号： G02B19/00 , G02B5/30 , G02B17/08 , G02B27/28 , G03F7/20 , G03F9/00 , H01L21/027 , G03B27/54
CPC分类号： G02B17/0892 , G02B17/08 , G02B27/28 , G03B27/72 , G03F7/70125 , G03F7/70225 , G03F7/70566
摘要： A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

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