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    • 71. 发明申请
    • Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities
    • 磁约束金属等离子体溅射源,具有离子和中性密度的磁控制
    • US20040045811A1
    • 2004-03-11
    • US10241114
    • 2002-09-10
    • Applied Materials, Inc.
    • Wei D. WangPraburam GopalrajaJianming Fu
    • C23C014/32
    • C23C14/345C23C14/221C23C14/35C23C14/352H01J37/3266H01J37/3402
    • A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. A wafer support pedestal within the primary chamber has a planar processing surface for supporting a planar semiconductor wafer. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.
    • 金属气相沉积反应器包括具有包括天花板和侧壁的主室外壳的初级反应室。 主室内的晶片支撑台座具有用于支撑平面半导体晶片的平面处理表面。 反应器还包括二次反应器室,该二次反应器室具有二次室外壳和在待沉积在所述半导体晶片上的金属物质形成的次级室内的金属源靶。 工艺气体入口将工艺气体提供到靠近所述金属源靶的工作表面的次级室的区域中。 连接在所述金属源靶和所述次室壳体的导电部分之间的直流电源具有足够的功率以支持在金属源靶的工作表面附近的工艺气体的离子化,从而形成等离子体,从而将金属离子和中性粒子从 金属源目标的工作面。