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    • 76. 发明申请
    • Heat treating silicon carbide articles
    • 热处理碳化硅制品
    • US20050253313A1
    • 2005-11-17
    • US10846025
    • 2004-05-14
    • Abuagela Rashed
    • Abuagela Rashed
    • C04B35/565C04B38/00C04B41/53C04B41/91
    • C04B41/5392C04B35/565C04B35/64C04B41/009C04B41/91C04B2235/658C04B2235/6583C04B2235/6586C04B2235/663C04B2235/721
    • A process for heat-treating a silicon carbide article to remove residual amounts of free carbon and graphite is provided. The process includes supplying a silicon carbide article and heating the silicon carbide article within a predetermined temperature range for a predetermined time period. The heating is performed in the presence of an oxidizing agent. As a result, gaseous products, such as carbon dioxide and carbon monoxide, are liberated containing byproducts formed by oxidizing free carbon and graphite to remove the residual free carbon and graphite. Gases are produced as a result of the heating of the silicon carbide article. Particles are removed from the silicon carbide article without forming an oxide layer upon the silicon carbide article. As a result, the silicon carbide article is substantially free of carbon and graphite inclusions.
    • 提供了一种用于热处理碳化硅制品以除去剩余量的游离碳和石墨的方法。 该方法包括提供碳化硅制品并将预定温度范围内的碳化硅制品加热预定时间段。 加热在氧化剂存在下进行。 结果,释放了气态产物如二氧化碳和一氧化碳,其中含有通过氧化游离碳和石墨形成的副产物以除去残留的游离碳和石墨。 由于碳化硅制品的加热而产生气体。 从碳化硅制品上除去颗粒,而不在碳化硅制品上形成氧化物层。 结果,碳化硅制品基本上不含碳和石墨夹杂物。