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71. 发明授权

US11183979B2 Gain-control stage for a variable gain amplifier 有权
公开(公告)号：US11183979B2
公开(公告)日：2021-11-23
申请号：US16718529
申请日：2019-12-18
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik
发明人： Pedro Rito , Iria Garcia Lopez , Minsu Ko , Dietmar Kissinger
IPC分类号： H03F3/45 , H03G1/00
摘要： The invention relates to a gain-control stage (100) for generating gain-control signals (Vc+, Vc−) for controlling an external variable-gain amplifying unit (101). The gain-control stage comprises a first (102) and a second differential amplifier unit (112) that receive, at a respective input interface (104,114) a reference voltage signal (VRef) and a variable gain-control voltage signal (VGC). The second differential amplifier unit is configured to provide, via a second output interface (120), a control voltage signal (V1) to a controllable first current source (106) of the first differential amplifier unit (102). The first differential amplifier unit (102) is configured to provide, via a first output interface (110), the first and the second gain-control signal (VC+, VC−) in dependence on the variable gain-control voltage signal (VGC), the reference voltage signal (VRef) and a first biasing current (IB1) that depends on the control voltage signal.

72. 发明授权

US10832953B2 Technological method for preventing, by means of buried etch stop layers, the creation of vertical/lateral inhomogeneities when etching through-silicon vias 有权
公开(公告)号：US10832953B2
公开(公告)日：2020-11-10
申请号：US15718480
申请日：2017-09-28
申请人： IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
发明人： Matthias Wietstruck , Mehmet Kaynak , Philip Kulse , Marco Lisker , Steffen Marschmeyer , Dirk Wolansky
IPC分类号： H01L21/768 , H01L23/48 , H01L21/306 , H01L21/308 , H01L21/683 , H01L21/78 , H01L23/528 , H01L23/66
摘要： Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

73. 发明授权

US10474431B2 Device and method for multiplication for impeding side-channel attacks 有权
公开(公告)号：US10474431B2
公开(公告)日：2019-11-12
申请号：US15523977
申请日：2015-11-06
申请人： IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK
发明人： Zoya Dyka , Peter Langendorfer
IPC分类号： G06F21/00 , G06F7/53 , H04L9/00
摘要： A device for multiplying two bit sequences has a controller that selects and activates exactly one multiplier unit from a plurality of parallel multiplier units, according to a random signal. A partial multiplier unit shared by all the multiplier units receives and multiplies operands formed by the respectively activated multiplier unit. Each multiplier unit implements a different multiplication method with a respective selector unit that selects segments of the bit sequences to be multiplied, in accordance with a selection plan adapted to the respective multiplication method, to form operands from one or more segments and outputs the operands. The respective accumulation unit receives step by step partial products from the partial multiplier unit, accumulates the partial products in accordance with an accumulation plan adapted to the implemented multiplication method and matching the selection plan, and outputs the calculated product of after accumulation has been completed.

74. 发明授权

US10422853B2 Method and system for oversampling a waveform with variable oversampling factor 有权
公开(公告)号：US10422853B2
公开(公告)日：2019-09-24
申请号：US16014100
申请日：2018-06-21
申请人： IHP GmbH—Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： Vladica Sark , Eckhard Grass , Jesus Gutierrez Teran
IPC分类号： H04W24/00 , G01S5/14 , G01S1/04 , H04B1/02 , H04L27/00 , G01S5/02
摘要： A method and system for oversampling a waveform with variable oversampling factor is suggested. The method and for dynamic selection of the oversampling factor are based on a modified equivalent time sampling approach. Multiple waveforms are transmitted, which are separated by a variable delay. The method permits that a receiver selects a different oversampling factor for the received waveform. As a result the method and system provide for oversampling a waveform with a variable, dynamically selectable oversampling factor.

75. 发明授权

US09638617B2 MEMS-microviscometer 有权
公开(公告)号：US09638617B2
公开(公告)日：2017-05-02
申请号：US13921515
申请日：2013-06-19
申请人： IHP GmbH
发明人： Mario Birkholz , Jurgen Drews , Karl-Ernst Ehwald , Dieter Genschow , Ulrich Haak , Philip Kulse , Egbert Matthus , Katrin Schulz , Wolfgang Winkler , Dirk Wolansky , Marlen Frohlich
IPC分类号： G01N11/00 , G01N11/16
CPC分类号： G01N11/00 , G01N11/16
摘要： Micro-electromechanical device for measuring the viscosity of a fluid, comprises a measuring chamber with a micromechanical actuator, arranged as a cantilever above a metallically conductive counter electrode, elastically deformable towards the counter electrode, surrounded by the fluid to be measured and made of a metallically conductive material, a two-terminal RF voltage source that can be switched off, having a first output terminal connected to the actuator, and a second output terminal connected to the counter electrode, and which is designed to output an RF voltage signal that is suitable for deflecting the actuator out of its rest position, and a measuring device to detect a change in the frequency, amplitude or phase of the RF signal in order to determine a measurement value for the viscosity-dependent speed at which the actuator is deformed.

76. 发明授权

US09564549B2 Germainium pin photodiode for integration into a CMOS or BICMOS technology 有权
标题翻译：用于集成到CMOS或BICMOS技术中的Germainium引脚光电二极管
公开(公告)号：US09564549B2
公开(公告)日：2017-02-07
申请号：US14429131
申请日：2013-09-19
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektro
发明人： Dieter Knoll , Stefan Lischke , Lars Zimmermann , Yuji Yamamoto , Andreas Trusch
IPC分类号： H01L31/105 , H01L31/0224 , H01L31/0232 , H01L31/028
CPC分类号： H01L31/105 , H01L31/022408 , H01L31/02327 , H01L31/028 , H01L31/1055 , Y02E10/547
摘要： A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.
摘要翻译：一种二极管，其包括完全嵌入硅中并与硅形成下界面和侧界面的光敏锗区，其中侧向界面不垂直地延伸，而是倾斜地延伸到下界面，因此产生刻面形式。

77. 发明授权

US09195112B2 Electro-optic modulator 有权
标题翻译：电光调制器
公开(公告)号：US09195112B2
公开(公告)日：2015-11-24
申请号：US14004354
申请日：2012-03-02
申请人： Stefan Meister , Aws Al-Saadi , Hans Joachim Eichler , Bulent Franke , Lars Zimmermann , Bernd Tillack
发明人： Stefan Meister , Aws Al-Saadi , Hans Joachim Eichler , Bulent Franke , Lars Zimmermann , Bernd Tillack
IPC分类号： G02F1/035 , G02F1/225 , G02F1/025 , G02F1/015 , G02F1/21
CPC分类号： G02F1/2257 , G02F1/015 , G02F1/025 , G02F1/218 , G02F2001/0152 , G02F2001/0155 , G02F2001/213
摘要： An electro-optic modulator for the modulation of optical radiation of a predetermined wavelength, the electro-optic modulator having at least one optical resonator in which a standing optical wave can be formed for the predetermined wavelength. In the resonator, at least two doped semiconductor sections—as seen in the longitudinal direction of the resonator —are arranged at a distance from one another, and the at least two doped semiconductor sections respectively lie locally at an intensity minimum of the standing optical wave.
摘要翻译：一种用于调制预定波长的光辐射的电光调制器，所述电光调制器具有至少一个光谐振器，其中可以形成预定波长的驻波。在谐振器中，在谐振器的纵向方向上看到的至少两个掺杂的半导体部分被布置成彼此间隔一定距离，并且至少两个掺杂的半导体部分分别局部地位于驻波长的光波的强度最小值。

78. 发明授权

US09040956B2 Unipolar heterojunction depletion-layer transistor 有权
标题翻译：单极异质结耗尽层晶体管
公开(公告)号：US09040956B2
公开(公告)日：2015-05-26
申请号：US12998944
申请日：2009-12-11
申请人： Wolfgang Mehr , Gunther Lippert
发明人： Wolfgang Mehr , Gunther Lippert
IPC分类号： H01L29/872 , H01L29/16 , H01L29/737 , H01L29/76
CPC分类号： H01L29/16 , H01L29/1606 , H01L29/7376 , H01L29/7606
摘要： A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction of current flow, and in which the base contains a graphene layer.
摘要翻译：一种耗尽层晶体管，包括基极，发射极和集电极，其中发射极包含隧道二极管，当发射极 - 基极电压高于第一阈值时，该隧道二极管允许来自发射极的电荷载流子在集电极方向上的隧道电流在电流方向上施加电压，其中基底包含石墨烯层。

79. 发明申请

US20140241656A1 Electro-Optic Modulator 有权
标题翻译：电光调制器
公开(公告)号：US20140241656A1
公开(公告)日：2014-08-28
申请号：US14004354
申请日：2012-03-02
申请人： Stefan Meister , Aws Al-Saadi , Hans Joachim Eichler , Bulent Franke , Lars Zimmermann , Bernd Tillack
发明人： Stefan Meister , Aws Al-Saadi , Hans Joachim Eichler , Bulent Franke , Lars Zimmermann , Bernd Tillack
IPC分类号： G02F1/225 , G02F1/015 , G02F1/21
CPC分类号： G02F1/2257 , G02F1/015 , G02F1/025 , G02F1/218 , G02F2001/0152 , G02F2001/0155 , G02F2001/213
摘要： An electro-optic modulator for the modulation of optical radiation of a predetermined wavelength, the electro-optic modulator having at least one optical resonator in which a standing optical wave can be formed for the predetermined wavelength. In the resonator, at least two doped semiconductor sections—as seen in the longitudinal direction of the resonator—are arranged at a distance from one another, and the at least two doped semiconductor sections respectively lie locally at an intensity minimum of the standing optical wave.
摘要翻译：一种用于调制预定波长的光辐射的电光调制器，所述电光调制器具有至少一个光谐振器，其中可以形成预定波长的驻波。在谐振器中，至少两个掺杂的半导体部分（如在谐振器的纵向方向上所见）被布置成彼此间隔一定距离，并且所述至少两个掺杂的半导体部分分别局部地位于驻波长的光波的强度最小值。

80. 发明授权

US07880270B2 Vertical bipolar transistor 有权
标题翻译：垂直双极晶体管
公开(公告)号：US07880270B2
公开(公告)日：2011-02-01
申请号：US11792015
申请日：2005-12-12
申请人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
发明人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
IPC分类号： H01L29/732
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.
摘要翻译：一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料，收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域单晶部分横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

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