专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US09927699B2 Imprint lithography 有权
公开(公告)号：US09927699B2
公开(公告)日：2018-03-27
申请号：US13070101
申请日：2011-03-23
申请人： Sander Frederik Wuister , Vadim Yevgenyevich Banine
发明人： Sander Frederik Wuister , Vadim Yevgenyevich Banine
IPC分类号： G01B11/25 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography apparatus is disclosed which includes a pattern fixing system configured to use actinic radiation to fix a pattern provided in a layer of imprintable medium by an imprint lithography template, and an inspection system configured to use inspection radiation to inspect an element constituting or, in use, being located within, the imprint lithography apparatus. The imprint lithography apparatus is configured such that the pattern fixing system and the inspection system are provided, in use, with, respectively, actinic radiation and inspection radiation from a single source of radiation.

72. 发明授权

US09011978B2 Method and apparatus for treatment of self-assemblable polymer layers for use in lithography 有权
标题翻译：用于光刻的自组装聚合物层的处理方法和装置
公开(公告)号：US09011978B2
公开(公告)日：2015-04-21
申请号：US13580356
申请日：2011-01-06
申请人： Roelof Koole , Vadim Yevgenyevich Banine , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Vadim Yevgenyevich Banine , Sander Frederik Wuister , Emiel Peeters
IPC分类号： B05D3/02 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.
摘要翻译：公开了在衬底表面处理包含可自组装聚合物的层。在一个实施方案中，处理包括布置温度变化区域以扫过层，其中该区域内的层的温度与该区域通过之前该层的初始温度不同。

73. 发明申请

US20120312501A1 METHOD AND APPARATUS FOR TREATMENT OF SELF-ASSEMBLABLE POLYMER LAYERS FOR USE IN LITHOGRAPHY 有权
标题翻译：用于处理自组装聚合物层的方法和装置，用于在LITHOGRAPHY中使用
公开(公告)号：US20120312501A1
公开(公告)日：2012-12-13
申请号：US13580356
申请日：2011-01-06
申请人： Roelof Koole , Vadim Yevgenyevich Banine , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Vadim Yevgenyevich Banine , Sander Frederik Wuister , Emiel Peeters
IPC分类号： F27D19/00 , F27D9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.
摘要翻译：公开了在衬底表面处理包含可自组装聚合物的层。在一个实施方案中，处理包括布置温度变化区域以扫过层，其中该区域内的层的温度与该区域通过之前该层的初始温度不同。

74. 发明申请

US20130140272A1 LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS 有权
标题翻译：使用自组装聚合物的光刻
公开(公告)号：US20130140272A1
公开(公告)日：2013-06-06
申请号：US13816720
申请日：2011-07-21
申请人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译：衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。封盖允许除去第二结构域，例如，即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。

75. 发明授权

US08828253B2 Lithography using self-assembled polymers 有权
标题翻译：使用自组装聚合物进行平版印刷
公开(公告)号：US08828253B2
公开(公告)日：2014-09-09
申请号：US13816720
申请日：2011-07-21
申请人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
IPC分类号： B44C1/22 , B81C1/00 , H01L21/033
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译：衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。封盖允许除去第二结构域，例如即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。

76. 发明申请

US20120021140A1 IMPRINT LITHOGRAPHY ALIGNMENT METHOD AND APPARATUS 审中-公开
公开(公告)号：US20120021140A1
公开(公告)日：2012-01-26
申请号：US13189145
申请日：2011-07-22
申请人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
发明人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
IPC分类号： B29C35/08 , B28B11/08 , G01B11/03
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.
摘要翻译：用于压印光刻的对准模板和衬底的方法包括使用模板的掩模图案和衬底的发光标记图案，该方法包括使用发射的辐射的辐射强度测量对准模板掩模图案和衬底标记图案通过发光标记图案并通过模板掩模图案。掩模图案和发光标记图案各自可以被成形为提供从标记图案发射的检测到的辐射的强度的转折点，并且作为在对准位置处的相对位移的函数通过掩模图案到检测器。可以通过识别辐射强度的转折点来对准模板和衬底的位移。标记图案可以是由辐射源激发的发射辐射的荧光。

77. 发明授权

US10222693B2 Imprint lithography alignment method and apparatus 有权
公开(公告)号：US10222693B2
公开(公告)日：2019-03-05
申请号：US13189145
申请日：2011-07-22
申请人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
发明人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
IPC分类号： G03F7/00 , B82Y10/00 , B82Y40/00
摘要： A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.

78. 发明申请

US20130266727A1 METHODS FOR PROVIDING PATTERNED ORIENTATION TEMPLATES FOR SELF-ASSEMBLABLE POLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于自组装聚合物的图案方向模板的方法用于器件平台的使用
公开(公告)号：US20130266727A1
公开(公告)日：2013-10-10
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
CPC分类号： C30B19/12 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.
摘要翻译：公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排，界面垂直于衬底表面。所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。

79. 发明授权

US10538859B2 Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography 有权
公开(公告)号：US10538859B2
公开(公告)日：2020-01-21
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.

80. 发明授权

US08921032B2 Self-assemblable polymer and method for use in lithography 有权
标题翻译：自组装聚合物和用于光刻的方法
公开(公告)号：US08921032B2
公开(公告)日：2014-12-30
申请号：US13700703
申请日：2011-04-20
申请人： Emiel Peeters , Sander Frederik Wuister , Roelof Koole
发明人： Emiel Peeters , Sander Frederik Wuister , Roelof Koole
IPC分类号： G03F7/004 , G03F7/20 , G03F7/40
CPC分类号： C08F293/00 , B05D5/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F297/04 , G03F7/0002 , G03F7/004 , G03F7/165 , G03F7/26
摘要： A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration. The second molecular configuration provides better ordering kinetics and permits annealing of defects near its order/disorder transition temperature, while the first molecular configuration, with a higher order/disorder transition temperature, provides low line edge/width roughness for the pattern formed on setting.
摘要翻译：公开了具有第一和第二分子构型的自组装聚合物，其具有第一分子构型，其具有比第二分子构型更高的可自组装聚合物的Flory Huggins参数，并且可自组装聚合物可从第一分子构型到第二分子构型，从第二分子构型到第一分子构型，或两者都通过施加刺激。聚合物可用于通过在其第二分子构型中排列和退火聚合物并在聚合物处于第一分子构型时设置聚合物，从而在基底上提供聚合物的有序周期性图案化层的方法。第二种分子结构提供更好的排序动力学，并允许在其顺序/无序转变温度附近的缺陷退火，而具有较高阶/无序转变温度的第一分子构型为设置上形成的图案提供了低的线边缘/宽度粗糙度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式