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1. 发明申请

US20120021140A1 IMPRINT LITHOGRAPHY ALIGNMENT METHOD AND APPARATUS 审中-公开
公开(公告)号：US20120021140A1
公开(公告)日：2012-01-26
申请号：US13189145
申请日：2011-07-22
申请人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
发明人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
IPC分类号： B29C35/08 , B28B11/08 , G01B11/03
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.
摘要翻译：用于压印光刻的对准模板和衬底的方法包括使用模板的掩模图案和衬底的发光标记图案，该方法包括使用发射的辐射的辐射强度测量对准模板掩模图案和衬底标记图案通过发光标记图案并通过模板掩模图案。掩模图案和发光标记图案各自可以被成形为提供从标记图案发射的检测到的辐射的强度的转折点，并且作为在对准位置处的相对位移的函数通过掩模图案到检测器。可以通过识别辐射强度的转折点来对准模板和衬底的位移。标记图案可以是由辐射源激发的发射辐射的荧光。

2. 发明授权

US10222693B2 Imprint lithography alignment method and apparatus 有权
公开(公告)号：US10222693B2
公开(公告)日：2019-03-05
申请号：US13189145
申请日：2011-07-22
申请人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
发明人： Johan Frederik Dijksman , Anke Pierik , Sander Frederik Wuister , Roelof Koole
IPC分类号： G03F7/00 , B82Y10/00 , B82Y40/00
摘要： A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.

3. 发明授权

US09372399B2 Imprint lithography method and imprintable medium 有权
标题翻译：印刷光刻法和可压印介质
公开(公告)号：US09372399B2
公开(公告)日：2016-06-21
申请号：US13812459
申请日：2011-07-21
申请人： Martinus Bernardus Van Der Mark , Vadim Yevgenyevich Banine , Andre Bernardus Jeunink , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Andreas Godefridus Peeters , Johan Hendrik Klootwijk , Roelof Koole , Christianus Martinus Van Heesch , Ruediger Guenter Mauczok , Jacobus Bernardus Giesbers
发明人： Martinus Bernardus Van Der Mark , Vadim Yevgenyevich Banine , Andre Bernardus Jeunink , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Andreas Godefridus Peeters , Johan Hendrik Klootwijk , Roelof Koole , Christianus Martinus Van Heesch , Ruediger Guenter Mauczok , Jacobus Bernardus Giesbers
IPC分类号： G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
摘要翻译：公开了一种压印光刻方法，用于减少由固定的可打印介质的图案层的一部分产生的预期形貌和实际形貌之间的差异。该方法包括将压印光刻模板压印到可流动的可压印介质层中以在可压印介质中形成图案化层，并固定可压印介质以形成固定可压印介质的图案化层。局部激发被施加到图案化层的部分以调整图案化层的部分中的化学反应，以减少所期望的形貌与由可压印介质的固定图案化层的部分产生的实际形貌之间的差异，当这是随后用作图案化基板的抗蚀剂。还公开了适用于该方法的压印光刻的压印介质。

4. 发明授权

US08828253B2 Lithography using self-assembled polymers 有权
标题翻译：使用自组装聚合物进行平版印刷
公开(公告)号：US08828253B2
公开(公告)日：2014-09-09
申请号：US13816720
申请日：2011-07-21
申请人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
IPC分类号： B44C1/22 , B81C1/00 , H01L21/033
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译：衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。封盖允许除去第二结构域，例如即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。

5. 发明申请

US20130140272A1 LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS 有权
标题翻译：使用自组装聚合物的光刻
公开(公告)号：US20130140272A1
公开(公告)日：2013-06-06
申请号：US13816720
申请日：2011-07-21
申请人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
发明人： Roelof Koole , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Peeters
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译：衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。封盖允许除去第二结构域，例如，即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。

6. 发明授权

US08961801B2 Imprint lithography method and apparatus 有权
标题翻译：压印光刻方法和装置
公开(公告)号：US08961801B2
公开(公告)日：2015-02-24
申请号：US12869381
申请日：2010-08-26
申请人： Sander Frederik Wuister , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
发明人： Sander Frederik Wuister , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
IPC分类号： C03C15/00 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/00
CPC分类号： B29C43/34 , B29C43/021 , B29C43/58 , B29C2043/025 , B29K2101/12 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
摘要翻译：在一个实施例中，提供了压印光刻方法，其包括在衬底的第一区域上提供第一量的可压印介质，当固定时，第一量的可压印介质具有第一蚀刻速率; 以及在所述基板的第二不同区域上提供第二量的可压印介质，所述第二量的可压印介质在固定时具有第二不同的蚀刻速率。

7. 发明申请

US20110049097A1 IMPRINT LITHOGRAPHY METHOD AND APPARATUS 有权
标题翻译：印刷方法和装置
公开(公告)号：US20110049097A1
公开(公告)日：2011-03-03
申请号：US12869381
申请日：2010-08-26
申请人： Sander Frederik WUISTER , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
发明人： Sander Frederik WUISTER , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
IPC分类号： B44C1/22
CPC分类号： B29C43/34 , B29C43/021 , B29C43/58 , B29C2043/025 , B29K2101/12 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
摘要翻译：在一个实施例中，提供了压印光刻方法，其包括在衬底的第一区域上提供第一量的可压印介质，当固定时，第一量的可压印介质具有第一蚀刻速率; 以及在所述基板的第二不同区域上提供第二量的可压印介质，所述第二量的可压印介质在固定时具有第二不同的蚀刻速率。

8. 发明申请

US20130266727A1 METHODS FOR PROVIDING PATTERNED ORIENTATION TEMPLATES FOR SELF-ASSEMBLABLE POLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于自组装聚合物的图案方向模板的方法用于器件平台的使用
公开(公告)号：US20130266727A1
公开(公告)日：2013-10-10
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
CPC分类号： C30B19/12 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.
摘要翻译：公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排，界面垂直于衬底表面。所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。

9. 发明授权

US10538859B2 Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography 有权
公开(公告)号：US10538859B2
公开(公告)日：2020-01-21
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.

10. 发明申请

US20130120725A1 IMPRINT LITHOGRAPHY METHOD AND IMPRINTABLE MEDIUM 有权
标题翻译：印刷地图法和可变介质
公开(公告)号：US20130120725A1
公开(公告)日：2013-05-16
申请号：US13812459
申请日：2011-07-21
申请人： Martinus Bernardus Van Der Mark , Vadim Yevgenyevich Banine , Andre Bernardus Jeunink , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Andreas Godefridus Peeters , Johan Hendrik Klootwijk , Roelof Koole , Christianus Martinus Van Heesch , Ruediger Guenter Mauczok , JAcobus Bernardus Giesbers
发明人： Martinus Bernardus Van Der Mark , Vadim Yevgenyevich Banine , Andre Bernardus Jeunink , Johan Frederik Dijksman , Sander Frederik Wuister , Emiel Andreas Godefridus Peeters , Johan Hendrik Klootwijk , Roelof Koole , Christianus Martinus Van Heesch , Ruediger Guenter Mauczok , JAcobus Bernardus Giesbers
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
摘要翻译：公开了一种压印光刻方法，用于减少由固定的可打印介质的图案层的一部分产生的预期形貌和实际形貌之间的差异。该方法包括将压印光刻模板压印到可流动的可压印介质层中以在可压印介质中形成图案化层，并固定可压印介质以形成固定可压印介质的图案化层。局部激发被施加到图案化层的部分以调整图案化层的部分中的化学反应，以减少所期望的形貌与由可压印介质的固定图案化层的部分产生的实际形貌之间的差异，当这是随后用作图案化基板的抗蚀剂。还公开了适用于该方法的压印光刻的压印介质。

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