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    • 73. 发明授权
    • RF tuning circuit
    • RF调谐电路
    • US4831661A
    • 1989-05-16
    • US103664
    • 1987-10-02
    • Yukio Suzuki
    • Yukio Suzuki
    • H01F19/04H03D7/18H03J3/18H03J3/32
    • H03J3/32H01F19/04H03D7/18H03J3/185
    • A RF tuning circuit according to this invention is composed of one tuned transformer (T.sub.1) at least and an untuned transformer (T.sub.2) so interconnected that the outputs from the respective transformers add up opposite in phase on that side of the resonant frequency of the tuned transformer where the image signal frequency is present and in phase on that side thereof where the image signal is absent and that the output amplitude levels of the respective transformers become equal at the image signal frequency corresponding to a particular receiving frequency as the resonant frequency is varied in response to the receiving frequency.
    • 根据本发明的RF调谐电路由至少一个调谐变压器(T1)和互连的未谐振变压器(T2)组成,使得来自各个变压器的输出在被调谐的谐振频率的该侧的相反相加 变压器,其中图像信号频率存在并且在其侧面不存在图像信号的那侧,并且当谐振频率变化时,各个变压器的输出幅度电平在对应于特定接收频率的图像信号频率变得相等 响应于接收频率。
    • 75. 发明授权
    • High speed bi-comos switching circuit
    • 高速双电源开关电路
    • US4694203A
    • 1987-09-15
    • US716151
    • 1985-03-26
    • Akira UragamiYukio SuzukiMasahiro IwamuraIkuro Masuda
    • Akira UragamiYukio SuzukiMasahiro IwamuraIkuro Masuda
    • H03K19/08H03K17/04H03K17/0412H03K17/567H03K17/60H03K17/687H03K19/017H03K19/0944H03K19/013
    • H03K17/04126H03K17/567H03K19/09448
    • A bipolar/CMOS mixed type switching circuit comprising two npn-type bipolar transistors Q.sub.1, Q.sub.2 that are connected in the form of a totem pole in the output stage, a CMOS inverter and an NMOSFET M.sub.3 for driving these transistors in a complementary manner, and resistance means R for discharging the electric charge stored in the base of the transistor Q.sub.2. The threshold voltage of an NMOSFET M.sub.2 constituting the CMOS inverter in the absence of substrate effect is set to be substantially equal to the threshold voltage of the NMOSFET M.sub.3 in the absence of the substrate effect, and the channel conductance W.sub.N /L.sub.N of the NMOSFET M.sub.3 is so set that the threshold voltage V.sub.LT1 of the CMOS inverter and the practical threshold voltage V.sub.LT2 of the NMOSFET M.sub.3 will be nearly the same. Owing to the above structure, there is obtained a switching circuit which permits little through current to flow and which operates at high speeds.
    • 一种双极/ CMOS混合型开关电路,包括在输出级以图腾柱形式连接的两个npn型双极晶体管Q1,Q2,CMOS反相器和用于以互补方式驱动这些晶体管的NMOSFET M3;以及 用于对存储在晶体管Q2的基极中的电荷进行放电的电阻装置R. 在不存在衬底效应的情况下,构成CMOS反相器的NMOSFET M2的阈值电压被设置为在没有衬底效应的情况下基本上等于NMOSFET M3的阈值电压,并且NMOSFET M3的沟道电导WN / LN 被设置为使得CMOS反相器的阈值电压VLT1和NMOSFET M3的实际阈值电压VLT2将几乎相同。 由于上述结构,所以获得了允许很少的直流电流并且高速运行的开关电路。
    • 77. 发明授权
    • Compact high-frequency heating apparatus with stepped waveguide
    • 紧凑型高频加热装置,带有阶梯式波导
    • US4673783A
    • 1987-06-16
    • US877402
    • 1986-06-23
    • Ryuji IgarashiYukio Suzuki
    • Ryuji IgarashiYukio Suzuki
    • H05B6/72
    • H05B6/72
    • A high-frequency heating apparatus includes an inner casing defining a heating chamber therein, and an outer casing surrounding the inner case. A fixed waveguide is fixed on a top wall of the inner casing to guide high-frequency waves fed from a magnetron to an excitation opening. The waveguide has a step portion facing the excitation opening and located closer to the top wall than the other portion of the fixed waveguide. A motor is mounted on the step portion and has a driving shaft extending through the excitation opening into the heating chamber. A rotating waveguide, for diffusing the high-frequency waves delivered to the excitation opening and radiating the waves into the heating chamber, is disposed in the heating chamber and coupled to the driving shaft to be rotated thereby.
    • 高频加热装置包括在其中限定加热室的内壳和围绕内壳的外壳。 固定波导固定在内壳的顶壁上,以将从磁控管馈送的高频波引导到激励开口。 波导具有面向激发开口并且比固定波导的其它部分更靠近顶壁定位的台阶部分。 电动机安装在踏板部分上并具有延伸穿过激励开口进入加热室的驱动轴。 用于扩散输送到激励开口的高频波并将波浪辐射到加热室中的旋转波导设置在加热室中并联接到驱动轴以由此旋转。
    • 78. 发明授权
    • Water-dispersed coating composition comprising an acrylic graft polymer
containing carboxyl groups, hydroxyl and/or amide groups
    • 包含含有羧基,羟基和/或酰胺基团的丙烯酸接枝聚合物的水分散涂料组合物
    • US4329266A
    • 1982-05-11
    • US186557
    • 1980-09-12
    • Yukio SuzukiNaozumi IwasawaTadashi Watanabe
    • Yukio SuzukiNaozumi IwasawaTadashi Watanabe
    • C08F290/12C09D151/00C08L61/28
    • C08F290/126C09D151/003
    • A water-dispersed coating composition comprising (1) a dispersion of a water-dispersible form of an acrylic graft polymer containing carboxyl groups and hydroxyl and/or amide groups in an aqueous medium containing 60 to 90% by weight of water, and (2) an amino resin. The water-dispersible form of this polymer is obtained by neutralizing at least 50% of the carboxyl groups of the polymer with a basic substance. Prior to neutralization, the polymer has an acid value of 15 to 40 and a glass transition temperature of -10.degree. C. to 70.degree. C., and is produced by polymerizing (A) an acrylic copolymer and (B) a mixture of an alpha,beta-ethylenically unsaturated carboxylic acid and another copolymerizable unsaturated monomer. The copolymer (A) and the mixture (B) is selected so that either one of them has hydroxyl and/or amide groups and the difference between the acid value of the copolymer (A) and that of the mixture (B) is from 25 to 200. The present invention also provides a water-dispersed coating composition comprising a dispersion of a water-dispersible form of a self-curable acrylic graft polymer without an amino resin.
    • 一种水分散涂料组合物,其包含(1)含水分散体形式的含羧基和羟基和/或酰胺基的丙烯酸接枝聚合物在含有60-90%重量水的水性介质中的分散体,和(2) )氨基树脂。 该聚合物的水分散形式通过用碱性物质中和聚合物的至少50%的羧基而获得。 在中和之前,聚合物的酸值为15至40,玻璃化转变温度为-10℃至70℃,并通过聚合(A)丙烯酸共聚物和(B)将 α,β-烯属不饱和羧酸和另一种可共聚的不饱和单体。 选择共聚物(A)和混合物(B),使得它们中的任一个具有羟基和/或酰胺基,并且共聚物(A)和混合物(B)的酸值之间的差异为25 本发明还提供一种水分散涂料组合物,其包含不具有氨基树脂的可分散自由基的丙烯酸接枝聚合物的分散体。