专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20060140546A1 Optional waveguide, optional waveguide module, and a method for fabricating optional waveguide module 失效
标题翻译：可选波导，可选波导模块和用于制造可选波导模块的方法
公开(公告)号：US20060140546A1
公开(公告)日：2006-06-29
申请号：US11305836
申请日：2005-12-16
申请人： Hidehiko Nakata , Takahiro Arakida , Terukazu Naruse , Miwa Okubo , Kazuyoshi Yamada , Momoko Eguchi
发明人： Hidehiko Nakata , Takahiro Arakida , Terukazu Naruse , Miwa Okubo , Kazuyoshi Yamada , Momoko Eguchi
IPC分类号： G02B6/36 , G02B6/42 , G02B6/26
CPC分类号： G02B6/3636 , G02B6/136 , G02B6/30 , G02B6/3652 , G02B6/4214 , G02B6/4246 , G02B6/43 , G02B2006/12109 , G02B2006/12121 , G02B2006/12123
摘要： An optical waveguide module has a planar type optical waveguide having at least one core, an optical fiber for connecting with the core of the optical waveguide optically, and an optical element for connecting the core of the optical waveguide optically. The optical waveguide includes a groove for allowing an optical fiber to be inserted thereinto and aligning the optical fiber with the core to connect the optical fiber and the core optically. A first edge of the optical waveguide, which traverses the core, is tapered and an edge of the core, which is exposed in the first edge of the optical waveguide, is formed as a reflection surface. A planar type optical element is mounted as the optical element at a position that is opposite to the reflection surface to connect the planar type optical element with the core optically through the reflection surface.
摘要翻译：光波导模块具有平面型光波导，其具有至少一个芯，用于与光学波导的光纤光学连接的光纤，以及用于光学连接光波导的芯的光学元件。光波导包括用于允许将光纤插入其中并将光纤与芯对准以便将光纤和芯光学连接的凹槽。穿过芯的光波导的第一边缘是渐缩的，并且在光波导的第一边缘中暴露的芯的边缘被形成为反射表面。平面型光学元件作为光学元件安装在与反射面相反的位置处，以通过反射表面光学地连接平面型光学元件与芯。

72. 发明申请

US20060133441A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060133441A1
公开(公告)日：2006-06-22
申请号：US11264866
申请日：2005-11-02
申请人： Takahiro Arakida , Hisashi Kudo
发明人： Takahiro Arakida , Hisashi Kudo
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/02461 , H01S5/0281
摘要： An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al2O3 film having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 film having a thickness of 10 nm on the emitting edge face by a sputtering process. The edge reflectance at the emitting edge face is set to 10%. The high reflection multi-layer film is formed by alternatively stacking Al2O3 films and a-Si films on the rear edge face. The semiconductor laser device, which includes the low reflection film having a good chemical and thermal stability and a good resistance against chemicals on the emitting edge face, is capable of suppressing occurrence of catastrophic optical damages at the emitting edge face, thereby realizing stable operation over a long period of time.
摘要翻译：提供了边缘发射型650nm波段红色半导体激光器件，其包括在半导体衬底上具有有源层的谐振器结构。在谐振器结构的发射边缘面上设置低反射三层膜，并且在谐振器结构的后边缘面上设置高反射多层膜。低反射三层膜通过依次堆叠厚度为10nm的第一Al 2 O 3 O 3膜，Si 3 N 3膜，具有厚度为190nm的N 4 N 4膜和在发射边缘面上具有10nm厚度的第二Al 2 O 3 N 3 N 3膜通过溅射工艺。发射边缘的边缘反射率设定为10％。高反射多层膜通过在后边缘面上交替层叠Al 2 O 3 3膜和a-Si膜而形成。包括具有良好的化学和热稳定性以及对发射边缘面上的化学物质的良好抗性的低反射膜的半导体激光器件能够抑制发射边缘面处的灾难性光学损伤的发生，从而实现稳定的操作很长一段时间。

73. 发明申请

US20060093267A1 Optical waveguide and optical transmitting/receiving module 有权
标题翻译：光波导和光发射/接收模块
公开(公告)号：US20060093267A1
公开(公告)日：2006-05-04
申请号：US10541088
申请日：2004-01-29
申请人： Takahiro Arakida , Kenji Suzuki
发明人： Takahiro Arakida , Kenji Suzuki
IPC分类号： G02B6/26
CPC分类号： G02B6/125 , G02B6/2804 , G02B6/4246
摘要： To provide an optical waveguide and an optical transmitting and receiving module able to perform a transmitting operation and a receiving operation simultaneously, wherein a linearly first waveguide 21 that one side is coupled to an optical fiber 3 and the other side is coupled to a light receiving element 4, and a second waveguide 22 that one side is coupled so as to make an acute angle θ with the side of the first waveguide 21 to be coupled to the light receiving element 4 and the other is coupled to a light emitting element 5 are provided. By controlling a shape of the second waveguide 22, the receiving signal light from the optical fiber 3 is received to the light receiving element 4, and is not guided to the second waveguide 22. Therefore, the receiving operation and the transmitting operation can be preformed at the same time. Namely, when the transmitting optical signal is the incident of light from the light emitting element 5 to the second waveguide 22, the optical signal is guided by the second waveguide 22 toward the first waveguide 21, coupled to the first waveguide 21, and guided toward the optical fiber 3.
摘要翻译：为了提供能够同时执行发送操作和接收操作的光波导和光发送和接收模块，其中一侧耦合到光纤3并且另一侧的线性第一波导21耦合到光接收元件4和第二波导22，其一侧被联接以便使与第一波导21的侧面成锐角的角度θ耦合到光接收元件4而另一侧耦合到发光元件5 提供。通过控制第二波导22的形状，来自光纤3的接收信号光被接收到光接收元件4，并且不被引导到第二波导22。因此，可以同时进行接收操作和发送操作。也就是说，当发射光信号是从发光元件5到第二波导22的光的入射时，光信号被第二波导管22引导到与第一波导21耦合的第一波导21，并被引向光纤3。

74. 发明授权

US08435815B2 Surface-emitting semiconductor laser and manufacturing method thereof 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US08435815B2
公开(公告)日：2013-05-07
申请号：US12926917
申请日：2010-12-17
申请人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
发明人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
IPC分类号： B82Y20/00
CPC分类号： H01S5/18355 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/18358
摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.
摘要翻译：表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。

75. 发明申请

US20110241571A1 Correction circuit, drive circuit, light-emitting device and correction method of current pulse waveform 有权
标题翻译：校正电路，驱动电路，发光装置及电流脉冲波形校正方法
公开(公告)号：US20110241571A1
公开(公告)日：2011-10-06
申请号：US12929677
申请日：2011-02-08
申请人： Osamu Maeda , Takeshi Yuwaki , Katsuhisa Daio , Koichi Kobe , Hirofumi Nakano , Takahiro Arakida
发明人： Osamu Maeda , Takeshi Yuwaki , Katsuhisa Daio , Koichi Kobe , Hirofumi Nakano , Takahiro Arakida
IPC分类号： H05B37/02 , H03K3/00
CPC分类号： H01S5/042 , H01S5/0612 , H01S5/183
摘要： A drive circuit and a drive current correcting method are described herein. The drive circuit comprises a current source that outputs a drive current, and a correction circuit that outputs a correction current. The correction circuit includes a first RC time constant circuit. An output terminal of the current source is connected to an output terminal of the correction circuit.
摘要翻译：本文描述了驱动电路和驱动电流校正方法。驱动电路包括输出驱动电流的电流源和输出校正电流的校正电路。校正电路包括第一RC时间常数电路。电流源的输出端连接到校正电路的输出端。

76. 发明申请

US20100238965A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20100238965A1
公开(公告)日：2010-09-23
申请号：US12661067
申请日：2010-03-10
申请人： Osamu Maeda , Takehiro Taniguchi , Takahiro Arakida
发明人： Osamu Maeda , Takehiro Taniguchi , Takahiro Arakida
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/18391 , B82Y20/00 , H01S5/0655 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/34326 , H01S2301/166
摘要： A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlxGayIn1-x-yP (where 0≦x
摘要翻译：半导体激光器包括：柱状层压结构，包括第一多层反射镜，第一间隔层，Al x Ga y In 1-x-y P（其中0＆lt; nlE; x <1和0

77. 发明申请

US20090180506A1 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20090180506A1
公开(公告)日：2009-07-16
申请号：US12318421
申请日：2008-12-29
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/183
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
摘要翻译：提供了能够提供高输出基本横模的垂直腔面发射激光器（VCSEL），同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。电流限制层具有电流注入区域和电流限制区域。横模调整部具有高反射面积和低反射面积。高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。高反射率区域的中心点布置在与第一相对区域不同的区域中。在与电流注入区域相对的相对区域中，在没有形成高反射率区域的区域中形成低反射率区域。

78. 发明申请

US20080240194A1 Vertical cavity surface emitting laser and method of manufacturing it 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US20080240194A1
公开(公告)日：2008-10-02
申请号：US12076791
申请日：2008-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/1017 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18391 , H01S2301/14
摘要： A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
摘要翻译：提供了能够容易且廉价地制造并且在一个方向上稳定激光的偏振方向的VSCEL。垂直空腔表面发射激光器包括从基板侧在基板上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层以及设置在所述一对槽的每个侧面上的第一氧化区域。

79. 发明授权

US07260295B2 Optical waveguide and optical transmitting/receiving module 有权
标题翻译：光波导和光发射/接收模块
公开(公告)号：US07260295B2
公开(公告)日：2007-08-21
申请号：US10541088
申请日：2004-01-29
申请人： Takahiro Arakida , Kenji Suzuki
发明人： Takahiro Arakida , Kenji Suzuki
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/125 , G02B6/2804 , G02B6/4246
摘要： An optical transmitting and receiving module for an optical waveguide performs both a transmitting operation and a receiving operation simultaneously. The linear first waveguide is provided such that one side is coupled to an optical fiber and the other side is coupled to a light receiving element. A second waveguide is coupled so as to meet and make an acute angle with the first waveguide. The second waveguide is shaped with a tapered portion adjacent to the first waveguide.
摘要翻译：用于光波导的光发射和接收模块同时执行发射操作和接收操作。线性第一波导被设置为使得一侧耦合到光纤并且另一侧耦合到光接收元件。第二波导被耦合以便与第一波导相遇并形成锐角。第二波导形成有与第一波导相邻的锥形部分。

80. 发明授权

US07230962B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07230962B2
公开(公告)日：2007-06-12
申请号：US11264866
申请日：2005-11-02
申请人： Takahiro Arakida , Hisashi Kudo
发明人： Takahiro Arakida , Hisashi Kudo
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/02461 , H01S5/0281
摘要： An edge-emitting semiconductor laser includes a resonator structure having an active layer. A low reflection three-layer film is provided on in emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed in an exemplary embodiment by sequentially stacking a first Al2O3 layer having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 layer having a thickness of 10 nm.
摘要翻译：边缘发射半导体激光器包括具有有源层的谐振器结构。在谐振器结构的发射边缘面上设置低反射三层膜，并且在谐振器结构的后边缘面上设置高反射多层膜。在示例性实施例中，通过顺序堆叠厚度为10nm的第一Al 2 O 3 O 3层，Si 3层，形成低反射三层膜厚度为190nm的N 3 N 4 N膜和厚度为10nm的第二Al 2 O 3 O 3层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式