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71. 发明授权

US07026236B2 Method of forming multilayer interconnection structure, method of manufacturing circuit board, and method of manufacturing device 有权
标题翻译：形成多层互连结构的方法，电路板的制造方法及其制造方法
公开(公告)号：US07026236B2
公开(公告)日：2006-04-11
申请号：US10877999
申请日：2004-06-29
申请人： Hideki Tanaka , Ichio Yudasaka , Mitsuru Sato
发明人： Hideki Tanaka , Ichio Yudasaka , Mitsuru Sato
IPC分类号： H01L21/4763
CPC分类号： H01L51/0022 , H01L21/76877 , H05K3/4053 , H05K3/4644 , H05K2203/013
摘要： Method of forming a multilayer interconnection structure of the invention that is a method of forming a multilayer interconnection structure in which a first conductive layer and a second conductive layer are stacked via an insulating layer, and the first conductive layer and the second conductive layer are connected via through holes formed in the insulating layer. The method includes the steps of forming a first conductive layer on a substrate, forming the insulating layer with the through holes on the first conductive layer, filling conductive material into the through holes using a droplet discharge device to form a contact conductive material, and forming the second conductive layer such that it is connected to the contact conductive material.
摘要翻译：形成本发明的多层互连结构的方法，其是形成多层互连结构的方法，其中第一导电层和第二导电层经由绝缘层堆叠，并且第一导电层和第二导电层被连接通过形成在绝缘层中的通孔。该方法包括以下步骤：在衬底上形成第一导电层，在第一导电层上形成具有通孔的绝缘层，使用液滴放电装置将导电材料填充到通孔中以形成接触导电材料，并形成第二导电层，使得其连接到接触导电材料。

72. 发明授权

US07015579B2 Semiconductor device for fingerprint recognition 有权
公开(公告)号：US07015579B2
公开(公告)日：2006-03-21
申请号：US10765999
申请日：2004-01-29
申请人： Akira Okada , Mitsuru Sato
发明人： Akira Okada , Mitsuru Sato
IPC分类号： H01L23/48
CPC分类号： G06K9/0002 , H01L2224/05573 , H01L2224/13025 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/1815 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device is disclosed that performs fingerprint recognition on the electrostatic-capacity principle. A finger sweeping across a fingerprint recognition area of a semiconductor chip provides positive fingerprint recognition operations with improved reliability.The semiconductor device includes the semiconductor chip having a sensor unit that performs fingerprint recognition, and a substrate having an opening formed in the position corresponding to the sensor unit. The semiconductor chip is flip chip bonded to the substrate such that the sensor unit corresponds to the opening, and except for the formed position of the opening, an under-fill material is provided between the semiconductor chip and the substrate.

73. 发明授权

US06918009B1 Cache device and control method for controlling cache memories in a multiprocessor system 失效
标题翻译：用于在多处理器系统中控制高速缓冲存储器的缓存装置和控制方法
公开(公告)号：US06918009B1
公开(公告)日：2005-07-12
申请号：US09786049
申请日：1998-12-18
申请人： Mitsuru Sato , Kouichi Kumon
发明人： Mitsuru Sato , Kouichi Kumon
IPC分类号： G06F12/08 , G06F12/00
CPC分类号： G06F12/0815 , G06F12/0862
摘要： In the case that at the time of generation of a pre-fetch request following a read request from one of the processors the data stored in other cache devices cannot be read unless its state tag is changed, a cache controller carries out weak read operation for causing failure in the pre-fetch request as a fetch protocol. Alternatively, the cache controller reads pre-fetch data without changing state tags of other cache devices, sets a weak read state (W), and stores the data. The data in the weak read state (W) is invalided by synchronization operation of memory consistency by software. Furthermore, the pre-fetch data is stored in a passive preservation mode in the present cache device. Even if the pre-fetch data corresponds to a read request from some other cache device, the preservation of the data is not informed to the other cache device.
摘要翻译：在根据来自处理器之一的读取请求之后产生预取请求时，除非其状态标签被改变，否则不能读取存储在其他高速缓存设备中的数据，高速缓存控制器执行弱读取操作导致预取请求中的失败作为获取协议。或者，高速缓存控制器在不改变其他高速缓存设备的状态标签的情况下读取预取数据，设置弱读取状态（W），并存储数据。弱读取状态（W）中的数据被软件的存储器一致性的同步操作所折磨。此外，预取数据以当前的缓存装置中的被动保存模式存储。即使预取数据对应于来自其他高速缓存设备的读取请求，也不会将数据的保存通知给其他高速缓存设备。

74. 发明授权

US06848239B2 Band refeeding method in banding packing machine and banding packing machine having refeeding mechanism 失效
标题翻译：带式包装机带带式送料方法及带料包装机
公开(公告)号：US06848239B2
公开(公告)日：2005-02-01
申请号：US10677021
申请日：2003-10-01
申请人： Tokio Shibazaki , Kenichi Enda , Yoshikatsu Aizawa , Saburo Tsurumaki , Mitsuru Sato
发明人： Tokio Shibazaki , Kenichi Enda , Yoshikatsu Aizawa , Saburo Tsurumaki , Mitsuru Sato
IPC分类号： B65B13/18 , B65B13/32 , B65B13/02
CPC分类号： B65B13/18
摘要： A band refeeding method in a banding packing machine is disclosed which can prevent the tip portion of a band from being excessively pulled back even if the band is not supplied correctly but is automatically pulled back, and can stay the band in a predetermined position and can successively supply the band to the band guide arch side. A length of a band to be pulled back to an original position by band pull back means is previously detected based on the number of rotations of a touch roller constituting band supply means. In addition, the number of rotations of the touch roller before reaching a predetected set value is detected when the tip portion of the band is pulled back. Then, a rotating speed of a roller of the band pull back means is reduced when the number of rotations is detected. Therefore, the roller of the band pull back means is subsequently rotated at the low speed, thereby pulling back the tip of the band to a predetermined position.
摘要翻译：公开了一种带式包装机中的带式再填充方法，其可以防止带的尖端部分被过度拉回，即使带未被正确地供应但是被自动地拉回，并且可以将带保持在预定位置，并且可以将带子连续地供给到带导向弓侧。基于构成带供给装置的触摸辊的转数预先检测到通过带拉回装置拉回到原始位置的带的长度。此外，当带的尖端部分被拉回时，检测到达到预定设定值之前的触摸辊的旋转次数。然后，当检测到转数时，带拉回装置的辊的转速减小。因此，带拉回装置的辊随后以低速旋转，从而将带的尖端拉回预定位置。

75. 外观设计

USD488822S1 Strapping packing machine 失效
标题翻译：捆扎包装机
公开(公告)号：USD488822S1
公开(公告)日：2004-04-20
申请号：US29182238
申请日：2003-05-22
申请人： Tokio Shibazaki , Kenichi Enda , Yoshikatsu Aizawa , Saburo Tsurumaki , Mitsuru Sato
设计人： Tokio Shibazaki , Kenichi Enda , Yoshikatsu Aizawa , Saburo Tsurumaki , Mitsuru Sato

76. 发明授权

US06501711B1 Pickup drive apparatus, pickup drive method, and recording/reproducing apparatus 失效
标题翻译：拾取驱动装置，拾取驱动方法和记录/再现装置
公开(公告)号：US06501711B1
公开(公告)日：2002-12-31
申请号：US09461309
申请日：1999-12-15
申请人： Kiyoshi Tateishi , Mitsuru Sato , Ikuya Kikuchi
发明人： Kiyoshi Tateishi , Mitsuru Sato , Ikuya Kikuchi
IPC分类号： G11B700
CPC分类号： G11B7/00718 , G11B7/0901
摘要： A pickup drive apparatus for recording or reproducing with respect to a recording medium such as a CD and a DVD. In the apparatus, return light produced by irradiating an optical spot is detected by a photodetector, and a push-pull signal is produced from this detection output. A tracking error signal is produced from the push-pull signal by a low-pass filter and a phase compensating circuit. A quasi-ON/OFF control signal having information of an irradiation position of the optical spot is produced from the push-pull signal by a high-pass filter, a comparator, and a single pulse generator. When the quasi-ON/OFF control signal is produced which indicates that the optical spot is positioned on a groove, the tracking error signal is outputted via switching circuits in synchronism with this signal production. A pickup is servo-controlled based on this output signal.
摘要翻译：一种用于相对于诸如CD和DVD的记录介质进行记录或再现的拾取驱动装置。在该装置中，通过光电检测器检测通过照射光点产生的返回光，并且从该检测输出产生推挽信号。通过低通滤波器和相位补偿电路从推挽信号产生跟踪误差信号。通过高通滤波器，比较器和单脉冲发生器从推挽信号产生具有光点的照射位置信息的准ON / OFF控制信号。当产生表示光点位于凹槽上的准ON / OFF控制信号时，跟踪误差信号与该信号产生同步地经由开关电路输出。基于该输出信号对拾取器进行伺服控制。

77. 发明授权

US06329126B1 Developer solution for acitinic ray sensitive resist 失效
标题翻译：用于acitinic光敏抗蚀剂的显影剂溶液
公开(公告)号：US06329126B1
公开(公告)日：2001-12-11
申请号：US08339340
申请日：1994-11-14
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F732
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

78. 发明授权

US6159652A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

79. 发明授权

US6083665A Photoresist laminate and method for patterning using the same 有权
标题翻译：光刻胶层压板和使用其的图案化方法
公开(公告)号：US6083665A
公开(公告)日：2000-07-04
申请号：US273262
申请日：1999-03-22
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译：提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

80. 发明授权

US5928837A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds 失效
标题翻译：包含肟磺酸盐化合物的负性化学增感光致抗蚀剂组合物
公开(公告)号：US5928837A
公开(公告)日：1999-07-27
申请号：US987023
申请日：1997-12-09
申请人： Mitsuru Sato , Kiyoshi Ishikawa , Yoshiki Sugeta , Hiroyuki Yamazaki , Toshikazu Tachikawa , Hiroshi Komano
发明人： Mitsuru Sato , Kiyoshi Ishikawa , Yoshiki Sugeta , Hiroyuki Yamazaki , Toshikazu Tachikawa , Hiroshi Komano
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel negative-working chemical-sensitization photoresist composition used in the photolithographic patterning work for the manufacture of semiconductor devices and the like and capable of giving a patterned resist layer with high sensitivity and pattern resolution as well as excellent heat resistance and excellently orthogonal cross sectional profile of the patterned resist layer. The composition comprises, as a uniform solution:(A) 100 parts by weight of an alkali-soluble resin which is a polyhydroxystyrene-based resin having a weight-average molecular weight of at least 2000;(B) from 3 to 70 parts by weight of an acid-crosslinkable compound which is an amino resin having hydroxyalkyl and/or alkoxyalkyl groups;(C) from 0.5 to 30 parts by weight of a radiation-sensitive acid-generating compound selected from several types of specific oximesulfonate compounds; and(D) from 0.5 to 10 parts by weight of a phenolic compound, such as benzophenone compounds, having at least four hydroxyl groups in a molecule and a molecular weight smaller than 2000.
摘要翻译：提出了用于制造半导体器件等的光刻图案化工作中的新颖的负极化学增感光致抗蚀剂组合物，并且能够提供具有高灵敏度和图案分辨率的图案化抗蚀剂层以及优异的耐热性和良好的正交图案化抗蚀剂层的横截面轮廓。该组合物包含作为均匀溶液：（A）100重量份作为重均分子量为至少2000的聚羟基苯乙烯类树脂的碱溶性树脂; （B）3〜70重量份作为具有羟烷基和/或烷氧基烷基的氨基树脂的酸交联性化合物; （C）0.5〜30重量份选自几种特定肟磺酸酯化合物的辐射敏感产酸化合物; 和（D）0.5〜10重量份在分子中具有至少四个羟基并且分子量小于2000的酚类化合物，例如二苯甲酮化合物。

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