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71. 发明授权

US08329508B2 Semiconductor die packages using thin dies and metal substrates 有权
标题翻译：使用薄模和金属基板的半导体管芯封装
公开(公告)号：US08329508B2
公开(公告)日：2012-12-11
申请号：US12823805
申请日：2010-06-25
申请人： Hamza Yilmaz , Steven Sapp , Qi Wang , Minhua Li , James J. Murphy , John Robert Diroll
发明人： Hamza Yilmaz , Steven Sapp , Qi Wang , Minhua Li , James J. Murphy , John Robert Diroll
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L23/3114 , H01L23/481 , H01L24/13 , H01L24/14 , H01L24/81 , H01L25/072 , H01L2224/05568 , H01L2224/05573 , H01L2224/06102 , H01L2224/13 , H01L2224/13022 , H01L2224/13099 , H01L2224/1403 , H01L2224/14051 , H01L2224/1411 , H01L2224/8121 , H01L2224/81815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/30107 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.
摘要翻译：公开了一种半导体管芯封装。半导体管芯封装包括金属基板和半导体管芯，其包括第一表面，第一表面包括第一电端子，第二表面，包括第二电端子和至少一个孔。金属基板附接到第二表面。多个导电结构在半导体管芯上，并且包括设置在该至少一个孔中的至少一个导电结构。其他导电结构可以设置在半导体管芯的第一表面上。

72. 发明申请

US20120288033A1 RECEIVING APPARATUS FOR HIGH FREQUENCY IMAGING SYSTEM 有权
标题翻译：接收高频成像系统的设备
公开(公告)号：US20120288033A1
公开(公告)日：2012-11-15
申请号：US13503278
申请日：2010-09-02
申请人： Richard Stirling-Gallacher , Ralf Boehnke , Qi Wang , Stefan Koch , Marc Guthoerl
发明人： Richard Stirling-Gallacher , Ralf Boehnke , Qi Wang , Stefan Koch , Marc Guthoerl
IPC分类号： H04L27/22
CPC分类号： H01Q3/38 , G01S7/03 , G01S13/887 , G01S13/89 , H01Q3/02
摘要： A receiving apparatus, a receiving method, and an imaging apparatus and method, adapted to receive high frequency image signals. The apparatus includes two or more receiver channels, each receiver channel including an antenna pattern including plural antenna elements to receive high frequency image signals, a receiving mechanism to process the high frequency image signals received by the antenna elements into baseband signals, an analog-to-digital conversion mechanism to convert the baseband signals from the receiving mechanism into digital signals, a phase shifting mechanism to phase shift the digital signals, and a combining mechanism to combine the phase shifted digital signals from the receiver channels into combined signals.
摘要翻译：一种适于接收高频图像信号的接收装置，接收方法和成像装置和方法。该装置包括两个或多个接收机信道，每个接收机信道包括包括多个天线元件以接收高频图像信号的天线方向图，接收机构，用于将由天线元件接收的高频图像信号处理为基带信号，模拟到将接收机构的基带信号转换为数字信号的数字转换机构，将数字信号相移的相移机构，以及将来自接收机信道的相移数字信号组合成合成信号的组合机构。

73. 发明授权

US08304461B2 Process for making polymer composites having thermoplastic properties 失效
标题翻译：制备具有热塑性的聚合物复合材料的方法
公开(公告)号：US08304461B2
公开(公告)日：2012-11-06
申请号：US12459975
申请日：2009-07-10
申请人： Carlos A. Cruz , Willie Lau , Joseph M. Rokowski , Qi Wang
发明人： Carlos A. Cruz , Willie Lau , Joseph M. Rokowski , Qi Wang
IPC分类号： C08J11/04
CPC分类号： C08J3/16 , C08F6/22 , C08J2300/30 , C08J2319/00 , C08J2321/00 , C08L19/003 , C08L33/12 , C08L101/02 , Y10T428/24355 , Y10T428/24364 , Y10T428/2438 , Y10T428/24405 , C08L2666/04
摘要： The present invention provides methods of making composite materials comprising combining particles of crosslinked rubber with coagulated aqueous polymer dispersions to form a mixture in aqueous dispersion, and subjecting the aqueous dispersion mixture to solid state shear pulverization to form materials that can be processed as thermoplastics at crosslinked rubber concentrations of from 10 to as high as 95 wt. %, based on the total solids of the material. The method may further comprise kneading the pulverized product to form useful articles, such as roofing membranes and shoe soles.
摘要翻译：本发明提供制备复合材料的方法，其包括将交联橡胶的颗粒与凝固的聚合物水分散体混合以在水分散体中形成混合物，并将水性分散体混合物进行固态剪切粉碎以形成可作为交联的热塑性塑料加工的材料橡胶浓度为10至高达95wt。％，基于材料的总固体。该方法还可以包括捏合粉碎产品以形成有用的制品，例如屋顶膜和鞋底。

74. 发明授权

US08254158B2 Semiconductor device having resistance based memory array and method of operation associated therewith 有权
标题翻译：具有基于电阻的存储器阵列的半导体器件和与其相关联的操作方法
公开(公告)号：US08254158B2
公开(公告)日：2012-08-28
申请号：US12646345
申请日：2009-12-23
申请人： Yong-Jun Lee , Kwangjin Lee , Taek-Sung Kim , Kwangho Kim , Wooyeong Cho , Hyunho Choi , Hye-Jin Kim , Qi Wang
发明人： Yong-Jun Lee , Kwangjin Lee , Taek-Sung Kim , Kwangho Kim , Wooyeong Cho , Hyunho Choi , Hye-Jin Kim , Qi Wang
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0064 , G11C13/0097 , G11C2013/0078 , G11C2213/72
摘要： In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
摘要翻译：在一个实施例中，半导体器件包括非易失性存储单元阵列，被配置为写入非易失性存储单元阵列的写入电路和控制电路。控制电路被配置为存储至少一个擦除指示符。擦除指示符与非易失性存储单元阵列的至少一部分相关联并且指示逻辑状态。控制电路被配置为在非易失性存储单元阵列的相关部分的擦除操作期间，控制写入电路将由擦除指示符指示的逻辑状态写入非易失性存储单元阵列。

75. 发明授权

US08237195B2 Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate 有权
标题翻译：功率MOSFET在金属衬底上的半导体异质结构中具有应变通道
公开(公告)号：US08237195B2
公开(公告)日：2012-08-07
申请号：US12248874
申请日：2008-10-09
申请人： Tat Ngai , Qi Wang , Joelle Sharp
发明人： Tat Ngai , Qi Wang , Joelle Sharp
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L21/6835 , H01L29/1054 , H01L29/165 , H01L29/407 , H01L29/41741 , H01L29/45 , H01L29/66734 , H01L29/7813 , H01L2221/6835 , H01L2924/30105 , H01L2924/3025
摘要： A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a first metal layer. The first semiconductor layer has a first semiconductor material and a second semiconductor material in a relaxed heterostructure and is heavily doped. A second semiconductor layer overlies the first semiconductor layer and has a first semiconductor material and a second semiconductor material in a relaxed heterostructure. The second semiconductor layer is more lightly doped than the first semiconductor layer. A trench extends into the second semiconductor layer and a channel region has a strained layer of the first semiconductor material adjacent a trench sidewall. The strained channel region provides enhanced carrier mobility and improves performance of the field effect transistor.
摘要翻译：具有覆盖金属基板上的异质结构半导体的应变半导体沟道区域的场效应晶体管器件包括覆盖第一金属层的第一半导体层。第一半导体层在松弛异质结构中具有第一半导体材料和第二半导体材料，并且是重掺杂的。第二半导体层覆盖在第一半导体层上，并且在松弛的异质结构中具有第一半导体材料和第二半导体材料。第二半导体层比第一半导体层更轻掺杂。沟槽延伸到第二半导体层中，并且沟道区具有邻近沟槽侧壁的第一半导体材料的应变层。应变通道区域提供增强的载流子迁移率并且改善场效应晶体管的性能。

76. 发明授权

US08193413B2 Temporal seed promoters for expressing genes in plants 有权
标题翻译：用于在植物中表达基因的时间种子启动子
公开(公告)号：US08193413B2
公开(公告)日：2012-06-05
申请号：US12572816
申请日：2009-10-02
申请人： Qi Wang , Lisa M. Weaver , Tim N. Oulmassov , Jeffrey Ahrens , Patrice Dubois , Jeffrey Q. Shen
发明人： Qi Wang , Lisa M. Weaver , Tim N. Oulmassov , Jeffrey Ahrens , Patrice Dubois , Jeffrey Q. Shen
IPC分类号： C12N15/79 , C12N15/82
CPC分类号： C12N15/8234 , C12N15/8245 , C12N15/8247 , C12N15/8254
摘要： The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression during a defined period of embryogenesis. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.
摘要翻译：本发明涉及植物遗传工程领域。更具体地，本发明涉及在胚胎发生的确定时期内的种子特异性基因表达。本发明提供能够转录种子中的异源核酸序列的启动子，以及修饰，产生和使用它们的方法。

77. 发明申请

US20120090049A1 SEED SPECIFIC USP PROMOTERS FOR EXPRESSING GENES IN PLANTS 有权
标题翻译：用于在植物中表达基因的特定的USP促销剂
公开(公告)号：US20120090049A1
公开(公告)日：2012-04-12
申请号：US12896713
申请日：2010-10-01
申请人： Qi Wang , Tanya Fagaly , Ronald Bassuner , Jihong Liang , Tim N. Oulmassov , John Dabrowski
发明人： Qi Wang , Tanya Fagaly , Ronald Bassuner , Jihong Liang , Tim N. Oulmassov , John Dabrowski
IPC分类号： A01H1/00 , A23K1/00 , C12N5/10 , A01H5/10 , C12N1/15 , C07H21/04 , C11B1/00 , A01H5/00 , A23L1/212 , C12N1/21
CPC分类号： C12N15/8254
摘要： The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.
摘要翻译：本发明涉及植物遗传工程领域。更具体地，本发明涉及种子特异性基因表达。本发明提供能够转录种子中的异源核酸序列的启动子，以及修饰，产生和使用它们的方法。

78. 发明授权

US08101500B2 Semiconductor device with (110)-oriented silicon 有权
标题翻译：具有（110）取向硅的半导体器件
公开(公告)号：US08101500B2
公开(公告)日：2012-01-24
申请号：US12174030
申请日：2008-07-16
申请人： Qi Wang , Minhua Li , Yuri Sokolov
发明人： Qi Wang , Minhua Li , Yuri Sokolov
IPC分类号： H01L21/30
CPC分类号： H01L29/7813 , H01L21/30608 , H01L21/76254 , H01L29/045 , H01L29/407 , H01L29/41741 , H01L29/66348 , H01L29/66363 , H01L29/66734
摘要： A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.
摘要翻译：在金属衬底上的重掺杂P型（110）半导体层上形成半导体器件的方法包括提供第一支撑衬底并形成覆盖在第一支撑衬底上的P型重掺杂（110）硅层。至少第一支撑衬底的顶层可通过相对于P型重掺杂（110）硅层的选择性蚀刻工艺而移除。在（110）硅层中和上方形成垂直半导体器件结构。垂直装置结构包括顶部金属层，其特征在于沿<110>方向的电流传导。该方法包括使用机械研磨和选择性蚀刻工艺将第二支撑衬底接合到顶部金属层并去除第一支撑衬底，以暴露P型重掺杂（110）硅层的表面并允许金属层在表面上形成。

79. 发明申请

US20110298047A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE STRUCTURES AND METHODS 有权
标题翻译：三维半导体器件结构与方法
公开(公告)号：US20110298047A1
公开(公告)日：2011-12-08
申请号：US13212175
申请日：2011-08-18
申请人： Qi Wang
发明人： Qi Wang
IPC分类号： H01L21/768 , H01L27/088
CPC分类号： H01L21/6835 , H01L23/481 , H01L23/49541 , H01L23/49562 , H01L24/11 , H01L24/17 , H01L24/31 , H01L24/83 , H01L25/074 , H01L29/41741 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403 , H01L2224/2919 , H01L2224/83851 , H01L2924/01019 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3025 , H01L2924/0665 , H01L2924/00014 , H01L2924/00
摘要： A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor devices. The first semiconductor device has a first plurality of terminals on a front side of the first semiconductor device and a first metal substrate on its back side, wherein one of the first plurality of terminals in the first semiconductor device is electrically coupled to the first metal substrate. The second semiconductor device has a second plurality of terminals on a front side of the second semiconductor device and a second metal substrate on its back side, wherein the second semiconductor device further includes a second metal substrate on its back side. The patterned conductive layer includes a plurality of conductive regions. Each of the conductive regions is bonded to a conductor coupled to one of the first plurality of terminals and another conductor coupled to one of the second plurality of terminals.
摘要翻译：三维半导体器件包括第一半导体器件，第二半导体器件和设置在第一和第二半导体器件之间的图案化导电层。第一半导体器件在第一半导体器件的前侧具有第一多个端子，在其背面具有第一金属基板，其中第一半导体器件中的第一多个端子中的一个电连接到第一金属基板。第二半导体器件在第二半导体器件的前侧具有第二多个端子，在其后侧具有第二金属基板，其中第二半导体器件在其后侧还包括第二金属基板。图案化导电层包括多个导电区域。每个导电区域被结合到耦合到第一多个端子中的一个的导体和耦合到第二多个端子中的一个的另一个导体。

80. 发明申请

US20110284755A1 HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR 有权
标题翻译：高灵敏度，固态中性探测器
公开(公告)号：US20110284755A1
公开(公告)日：2011-11-24
申请号：US13146780
申请日：2009-01-30
申请人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
发明人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
IPC分类号： G01T3/08 , H01L21/28
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L31/02
摘要： An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
摘要翻译：一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层（240）的慢或热中子（160）的装置（200）。该装置包括底部金属触点（220）和顶部金属触点（250），二极管结构（240）位于两个触点（220,250）之间，以便于检测α粒子（170）。装置（200）包括由含有硼-10同位素的材料形成的中子转换层（230）。顶部接触（250）被像素化，每个接触像素延伸到或靠近设备的边缘以促进电接触。接触像素具有细长体以允许它们跨越装置表面（242）延伸，每个像素具有小的表面积，以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。中子转换层（860）可以沉积在接触像素（830）上，例如使用纳米颗粒油墨的喷墨印刷。

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