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71. 发明申请

US20100031869A1 System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System 审中-公开
标题翻译：使用该系统制造硅单晶的系统和制造硅单晶的方法
公开(公告)号：US20100031869A1
公开(公告)日：2010-02-11
申请号：US12308122
申请日：2007-05-28
申请人： Makoto Iida , Nobuaki Mitamura , Takahiro Yanagimachi
发明人： Makoto Iida , Nobuaki Mitamura , Takahiro Yanagimachi
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B29/06 , C30B35/00
摘要： The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.
摘要翻译：本发明提供了一种制造硅单晶的系统，其设计了将F / G的值控制在规定范围内的制造条件，以使由使用 CZ方法属于目标标准，至少包括：1，从上一批硅晶单晶的晶体质量结果出发，初步设计后续批次中硅单晶的制造条件; 装置2根据后续批次中的牵引装置的构成部件从F和/或G的变化量计算校正量; 意味着3根据后续批次中的制造过程从F和/或G的变化量计算校正量; 以及通过装置1将装置2和/或装置3的校正量加到制造条件的装置4，以计算后续批次中的制造条件。结果，可以提供一种制造硅单晶的系统，其可以更可靠地获得具有期望的晶体质量的硅单晶并且提高生产率或产率，以及使用该系统制造单晶硅的方法。

72. 发明申请

US20090038713A1 ROLLING APPARATUS 有权
标题翻译：滚动装置
公开(公告)号：US20090038713A1
公开(公告)日：2009-02-12
申请号：US12293189
申请日：2007-05-16
申请人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
发明人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
IPC分类号： C23C8/26 , C23C8/32
CPC分类号： C22C38/02 , C21D1/06 , C21D1/10 , C21D9/40 , C21D2211/001 , C21D2211/008 , C22C38/04 , C22C38/18 , C23C8/26 , C23C8/32 , F16C19/06 , F16C19/364 , F16C29/0647 , F16C33/32 , F16C33/34 , F16C33/62 , F16C33/64 , Y02P10/253 , Y10S148/906
摘要： A rolling apparatus including an external member having a raceway surface on an inner peripheral surface thereof, an internal member having a raceway surface on an outer peripheral surface thereof, and a plurality of rolling elements which are rotatably provided between the raceway surface of the external member and the raceway surface of the internal member. A surface of at least one of the internal member, the external member, and the rolling elements is subjected to carbonitriding or nitriding; an area percentage of a nitride containing Si and Mn is 1% or more and 20% or less; surface hardness is HV750 or more. When depth from the raceway surface or depth from a rolling surface of the rolling element is defined as Z and diameter of the rolling element is defined as d, hardness at Z=0.045 d is HV650 to 850, and hardness at Z=0.18 d is HV400 to 800.
摘要翻译：一种滚动装置，包括在其内周面上具有滚道面的外部构件，在其外周面上具有滚道面的内部构件，以及多个滚动体，其可旋转地设置在外部构件的滚道面之间和内部构件的轨道面。内部构件，外部构件和滚动体中的至少一个的表面经受碳氮共渗或氮化; 含有Si和Mn的氮化物的面积百分比为1％以上20％以下; 表面硬度为HV750以上。当从滚道表面的深度或滚动体的滚动面的深度定义为Z，滚动体的直径为d时，Z = 0.045d的硬度为HV650〜850，Z = 0.18d的硬度为 HV400至800。

73. 发明授权

US07326395B2 Method for producing a single crystal and silicon single crystal wafer 有权
标题翻译：单晶和硅单晶晶片的制造方法
公开(公告)号：US07326395B2
公开(公告)日：2008-02-05
申请号：US10568186
申请日：2004-08-13
申请人： Izumi Fusegawa , Nobuaki Mitamura , Takahiro Yanagimachi
发明人： Izumi Fusegawa , Nobuaki Mitamura , Takahiro Yanagimachi
IPC分类号： C01B33/26
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/1068
摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.
摘要翻译：本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径被拉。至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向筒的装置制造单晶的情况下，单晶的缺陷密度低，Fe浓度可以即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

74. 发明授权

US07294196B2 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal 有权
标题翻译：硅单晶晶片，外延晶片和硅单晶的制造方法
公开(公告)号：US07294196B2
公开(公告)日：2007-11-13
申请号：US10512470
申请日：2003-05-07
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译：在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量，以及外延晶片。

75. 发明授权

US07129123B2 SOI wafer and a method for producing an SOI wafer 有权
标题翻译： SOI晶片和SOI晶片的制造方法
公开(公告)号：US07129123B2
公开(公告)日：2006-10-31
申请号：US10500580
申请日：2003-10-24
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： H01L21/84 , H01L31/36 , C30B15/20
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.
摘要翻译：在制造SOI晶片的方法中，包括从接合晶片表面注入离子以在晶片内部形成离子注入层的步骤，通过氧化膜或直接键合离子注入的接合晶片表面和基底晶片的表面，并且通过在离子注入层处热处理接合晶片的一部分来形成SOI晶片，接合晶片是由通过Czochralski方法生长的硅单晶组成的硅晶片，其被N区域外部占据 OSF以环形形成，并且没有通过Cu沉积法检测到缺陷区域。因此，即使是厚度为200nm以下的极薄的SOI层也能够提供具有优异的电性能的SOI晶片，而不会产生由酸清洗引起的微凹坑，并且可以在不增加工艺数的情况下制造。

76. 发明申请

US20060174819A1 Method for producing single crystal and single crystal 有权
标题翻译：单晶和单晶的制造方法
公开(公告)号：US20060174819A1
公开(公告)日：2006-08-10
申请号：US10561865
申请日：2004-05-27
申请人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
发明人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译：本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上生长轴可以稳定地生产。

77. 发明授权

US07073915B2 Mirror fixing method and optical apparatus 失效
标题翻译：镜面固定方法和光学装置
公开(公告)号：US07073915B2
公开(公告)日：2006-07-11
申请号：US10662484
申请日：2003-09-16
申请人： Hideo Okada , Yuji Sakata , Shinichi Wakana , Yujin Yamazaki , Yuichi Kawahata , Nobuaki Mitamura
发明人： Hideo Okada , Yuji Sakata , Shinichi Wakana , Yujin Yamazaki , Yuichi Kawahata , Nobuaki Mitamura
IPC分类号： G02B5/08 , G02B7/192
CPC分类号： G02B6/29358 , G02B6/29389 , G02B7/182 , G02B7/1825
摘要： An object of the invention is to provide a mirror fixing method capable of reducing stress distortion of a surface of a mirror which constitutes an optical system, with hardly deforming a surface shape of the mirror. To this end, the present mirror fixing method is characterized in that a mirror part including a base plate formed with a mirror on one face thereof, is provided with a boss on the other face of the base plate opposite to the face on which the mirror is formed, and only the boss is fixed, so that the mirror part excluding the boss is not in contact with other members.
摘要翻译：本发明的目的是提供一种能够减小构成光学系统的反射镜的表面的应力变形，使反射镜的表面形状几乎不变形的镜面固定方法。为此，本发明的镜子固定方法的特征在于，在其一面上形成有反射镜的基板的反射镜部分在基板的与镜面相反的另一面上设置有凸台并且只有凸台被固定，使得不包括凸台的镜部件不与其它构件接触。

78. 发明申请

US20060113594A1 Soi wafer and production method therefor 有权
标题翻译： Soi晶圆及其生产方法
公开(公告)号：US20060113594A1
公开(公告)日：2006-06-01
申请号：US10542376
申请日：2004-01-22
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa
IPC分类号： H01L27/12
CPC分类号： C30B29/06 , C30B15/203 , H01L21/76251
摘要： An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.
摘要翻译：其中分别由硅单晶构成的基底晶片和接合晶片通过氧化膜结合的SOI晶片，然后将接合晶片变薄以形成硅有源层，其中，基底晶片由单晶硅单晶通过切克劳斯基法，基底晶片的整个表面在OSF区域外的N区域内，并且不包括通过Cu沉积法检测的缺陷区域，或者基底晶片的整个表面在OSF区域外的区域内，不包括通过Cu沉积法检测的缺陷区域，并且包括由于间隙硅而含有位错簇的I区域。由此，提供了即使在形成例如厚度为100nm以下的极薄的层间电介质氧化膜的情况下，也能够在器件制造中保持高绝缘性且具有优异的电可靠性的SOI晶片。

79. 发明授权

US07016096B2 Transmission wavelength characteristics variable optical element, and wavelength characteristics variable apparatus, optical amplifier, and optical transmission system, using same 失效
公开(公告)号：US07016096B2
公开(公告)日：2006-03-21
申请号：US10351376
申请日：2003-01-27
申请人： Hirotomo Izumi , Takashi Ishiwada , Nobuaki Mitamura
发明人： Hirotomo Izumi , Takashi Ishiwada , Nobuaki Mitamura
IPC分类号： G02F1/09 , G03B21/56 , H04B10/12
CPC分类号： G02F1/09 , G02B26/00 , G02F1/21 , G02F2001/213 , G02F2203/05 , H01S3/06754 , H01S3/1003 , H01S3/1062 , H01S3/1301 , H01S2301/04
摘要： An object of the invention is to easily realize an optical element using an etalon type structure, capable of changing a periodic transmission wavelength characteristic in an axial direction of transmissivity, and also capable of changing a periodic characteristic with respect to wavelength. To this end, a transmission wavelength characteristics variable optical element according to the invention comprises: a light interference section including a pair of wedge shape magneto-optic crystals arranged with taper faces thereof in close contact, that can change a distance between reflecting films formed on parallel planes of the magneto-optic crystals, by relatively moving the magneto-optic crystals by movable sections, permanent magnets for applying a fixed magnet field to the pair of magneto-optic crystals, an electromagnet for applying a variable magnetic field in a direction different to the fixed magnetic field, and a variable current source controlling the current flowing into the electromagnet.

80. 发明申请

US20050084198A1 Variable polarization plane rotator and optical device using same 失效
公开(公告)号：US20050084198A1
公开(公告)日：2005-04-21
申请号：US10974780
申请日：2004-10-28
申请人： Hiroshi Nagaeda , Nobuaki Mitamura , Kazuaki Akimoto
发明人： Hiroshi Nagaeda , Nobuaki Mitamura , Kazuaki Akimoto
IPC分类号： G02B6/32 , G02B5/30 , G02B6/26 , G02B6/34 , G02B27/28 , G02F1/01 , G02F1/03 , G02F1/061 , G02F1/13 , G02F1/31 , G02B6/00
CPC分类号： G02B6/29302 , G02B6/266 , G02B6/272 , G02B6/2766 , G02B27/286 , G02F1/0136 , G02F2201/17 , G02F2203/48
摘要： An optical device includes a small and low-cost variable polarization plane rotator that can control a rotation angle of the polarization plane easily. A variable polarization plane rotator is provided with a λ/4 phase plate having an optical axis in the same direction as, or at a 90 degree angle relative to, a polarization direction of an input light beam. A phase difference variable element has an optical axis at a ±45 degree angle relative to the optical axis of the λ/4 phase plate, to apply a variable phase difference between the polarization components parallel to and perpendicular to the optical axis thereof. A phase difference adjustment section adjusts the variable phase difference of the phase difference variable element, wherein the input light beam after being transmitted through the phase difference variable element to form elliptically polarized light or circularly polarized light, is transmitted through the λ/4 phase plate to form linearly polarized light. The polarization plane of the input light beam is rotated by an angle corresponding to the phase difference applied by the phase difference variable element.

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