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71. 发明申请

US20090004850A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 审中-公开
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20090004850A1
公开(公告)日：2009-01-01
申请号：US12111923
申请日：2008-04-29
申请人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。在一个实例中，金属硅化物层和金属覆盖层都含有钴。钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

72. 发明申请

US20080274299A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20080274299A1
公开(公告)日：2008-11-06
申请号：US12172092
申请日：2008-07-11
申请人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳衬底支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

73. 发明授权

US07270709B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US07270709B2
公开(公告)日：2007-09-18
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

74. 发明申请

US20070067609A1 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US20070067609A1
公开(公告)日：2007-03-22
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： G06F15/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

75. 发明申请

US20060128150A1 Ruthenium as an underlayer for tungsten film deposition 失效
标题翻译：钌作为钨膜沉积的底层
公开(公告)号：US20060128150A1
公开(公告)日：2006-06-15
申请号：US11009331
申请日：2004-12-10
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
摘要翻译：在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺层。

76. 发明授权

US07026238B2 Reliability barrier integration for Cu application 失效
公开(公告)号：US07026238B2
公开(公告)日：2006-04-11
申请号：US10052681
申请日：2002-01-17
申请人： Ming Xi , Paul Frederick Smith , Ling Chen , Michael X. Yang , Mei Chang , Fusen Chen , Christophe Marcadal , Jenny C. Lin
发明人： Ming Xi , Paul Frederick Smith , Ling Chen , Michael X. Yang , Mei Chang , Fusen Chen , Christophe Marcadal , Jenny C. Lin
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804 , C25D5/02 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

77. 发明申请

US20050271814A1 Multi-station deposition apparatus and method 有权
公开(公告)号：US20050271814A1
公开(公告)日：2005-12-08
申请号：US11198140
申请日：2005-08-05
申请人： Mei Chang , Lawrence Lei , Walter Glenn
发明人： Mei Chang , Lawrence Lei , Walter Glenn
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/45512 , C23C16/45519 , C23C16/45551 , C23C16/45565 , C23C16/4586 , C23C16/54 , H01L21/67017 , H01L21/6719
摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

78. 发明申请

US20050189072A1 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US20050189072A1
公开(公告)日：2005-09-01
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/31 , C23F1/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

79. 发明授权

US06936906B2 Integration of barrier layer and seed layer 有权
标题翻译：势垒层和种子层的整合
公开(公告)号：US06936906B2
公开(公告)日：2005-08-30
申请号：US09965373
申请日：2001-09-26
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： C23C14/34 , C23C16/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/58 , H01L27/095
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施例中，种子层包括沉积在阻挡层上的铜合金晶种层和沉积在铜合金晶种层上的第二晶种层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

80. 发明授权

US06309713B1 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition 失效
公开(公告)号：US06309713B1
公开(公告)日：2001-10-30
申请号：US08884811
申请日：1997-06-30
申请人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
发明人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
IPC分类号： H05H124
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

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