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71. 发明申请

US20120286382A1 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US20120286382A1
公开(公告)日：2012-11-15
申请号：US13068398
申请日：2011-05-10
申请人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

72. 发明申请

US20120280336A1 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications 有权
标题翻译：具有减少的垂直退磁场的多层使用瞬时应用的时间稀释
公开(公告)号：US20120280336A1
公开(公告)日：2012-11-08
申请号：US13068172
申请日：2011-05-04
申请人： Guenole Jan , Ru Ying Tong , Witold Kula
发明人： Guenole Jan , Ru Ying Tong , Witold Kula
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少垂直退磁场。结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

73. 发明授权

US07198818B2 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors 有权
标题翻译：在磁阻传感器上制作自对准反射/保护覆盖层
公开(公告)号：US07198818B2
公开(公告)日：2007-04-03
申请号：US11146656
申请日：2005-06-06
申请人： Witold Kula , Alexander Michael Zeltser
发明人： Witold Kula , Alexander Michael Zeltser
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996
摘要： A magnetoresistance sensor is fabricated using a sensor structure including a free layer deposited upon a lower layered structure and depositing an oxide structure overlying the free layer. The depositing of the oxide structure includes the steps of depositing a buffer layer overlying the free layer, wherein the buffer layer is a buffer-layer metal when deposited, depositing an overlayer overlying and contacting the buffer layer, the overlayer being an overlayer metallic oxide of an overlayer metal, and oxidizing the buffer layer to form a buffer layer metallic oxide.
摘要翻译：使用包括沉积在较低层结构上的自由层并沉积覆盖自由层的氧化物结构的传感器结构来制造磁阻传感器。氧化物结构的沉积包括沉积覆盖自由层的缓冲层的步骤，其中当沉积时缓冲层是缓冲层金属，沉积覆盖层并接触缓冲层的覆盖层，所述覆盖层是覆盖层的金属氧化物覆盖金属，氧化缓冲层形成缓冲层金属氧化物。

74. 发明申请

US20050002127A1 Enhanced spin-valve sensor with engineered overlayer 失效
标题翻译：具有工程覆层的增强型自旋阀传感器
公开(公告)号：US20050002127A1
公开(公告)日：2005-01-06
申请号：US10898816
申请日：2004-07-26
申请人： Witold Kula , Alexander Zeltser
发明人： Witold Kula , Alexander Zeltser
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：公开了一种用于在数据存储介质上检测磁记录信息的GMR传感器。传感器包括铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成工程化的覆层以减少自由层的磁性厚度，而不会减小物理厚度。

75. 发明申请

US20140035074A1 Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications 审中-公开
标题翻译：具有减少垂直退磁场的多层使用瞬时应用的瞬间稀释
公开(公告)号：US20140035074A1
公开(公告)日：2014-02-06
申请号：US14047130
申请日：2013-10-07
申请人： Guenole Jan , Ru Ying Tong , Witold Kula
发明人： Guenole Jan , Ru Ying Tong , Witold Kula
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided.
摘要翻译：公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少垂直退磁场。结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。垂直的Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。还提供了形成磁性元件的方法。

76. 发明申请

US20140015079A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 有权
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20140015079A1
公开(公告)日：2014-01-16
申请号：US14032593
申请日：2013-09-20
申请人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

77. 发明申请

US20130240963A1 STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain 有权
标题翻译： STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成
公开(公告)号：US20130240963A1
公开(公告)日：2013-09-19
申请号：US13421963
申请日：2012-03-16
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
摘要翻译：形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

78. 发明申请

US20100315869A1 Spin torque transfer MRAM design with low switching current 审中-公开
标题翻译：旋转扭矩传递MRAM设计，开关电流低
公开(公告)号：US20100315869A1
公开(公告)日：2010-12-16
申请号：US12456324
申请日：2009-06-15
申请人： Tai Min , Witold Kula
发明人： Tai Min , Witold Kula
IPC分类号： G11C11/14 , H01L21/00 , H01L29/82
CPC分类号： H01L29/66984 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , H01F10/3259 , H01F10/3268 , H01F10/329 , H01F41/303 , H01F41/307 , H01F41/325 , H01L43/08 , H01L43/12
摘要： The invention discloses a method to store digital information through use of spin torque transfer in a device that has a very low critical current. This is achieved by adding a spin filtering layer whose direction of magnetization is fixed to be parallel to the device's pinned layer.
摘要翻译：本发明公开了一种通过在具有非常低临界电流的装置中使用自旋扭矩传递来存储数字信息的方法。这是通过添加其磁化方向被固定为平行于器件的钉扎层的自旋过滤层来实现的。

79. 发明授权

US07352542B2 Enhanced spin-valve sensor with engineered overlayer formed on a free layer 失效
标题翻译：在自由层上形成具有工程覆层的增强型自旋阀传感器
公开(公告)号：US07352542B2
公开(公告)日：2008-04-01
申请号：US10898816
申请日：2004-07-26
申请人： Witold Kula , Alexander M. Zeltser
发明人： Witold Kula , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：公开了一种用于在数据存储介质上检测磁记录信息的GMR传感器。传感器包括铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成工程化的覆层以减少自由层的磁性厚度，而不会减小物理厚度。

80. 发明授权

US07007373B2 Method of manufacturing enhanced spin-valve sensor with engineered overlayer 失效
标题翻译：用工程覆层制造增强型自旋阀传感器的方法
公开(公告)号：US07007373B2
公开(公告)日：2006-03-07
申请号：US10298340
申请日：2002-11-18
申请人： Witold Kula , Alexander M. Zeltser
发明人： Witold Kula , Alexander M. Zeltser
IPC分类号： G11B5/187 , C23C14/06 , B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A method for making an enhanced spin valve sensor with engineered overlayer for sensing magnetically recorded information on a data storage medium. The method includes forming a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An overlayer is formed on the free layer and adapted to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：一种制造具有工程覆层的增强自旋阀传感器的方法，用于在数据存储介质上感测磁记录信息。该方法包括形成铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成覆盖层，适于降低自由层磁性厚度，而不会减小物理厚度。

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