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71. 发明授权

US06801435B1 Fixing structure for power supplies 有权
标题翻译：电源固定结构
公开(公告)号：US06801435B1
公开(公告)日：2004-10-05
申请号：US10437296
申请日：2003-05-14
申请人： Chun-Lung Su , Tzung-Han Lee , Hsien-Tang Weng
发明人： Chun-Lung Su , Tzung-Han Lee , Hsien-Tang Weng
IPC分类号： H05K502
CPC分类号： H05K7/1432 , Y10T292/0863 , Y10T292/0886 , Y10T292/0999
摘要： An improved fixing structure for power supplies defines an accommodating area on a power supply for installing a fixing structure, and the power supply has a fixing hole on a casing of the power supply defining a limit fixing condition for the fixing structure when the power supply is pushed into the casing, and the power supply has a limit hole for installing a limit fixing member to restrict the displacement of the fixing structure, and constitutes a fixing structure that can be installed directly inside a power supply without occupying additional space, and attains the effects of fixing two fixing structures and limiting the fixing member.
摘要翻译：电源的改进的固定结构限定了用于安装固定结构的电源上的容纳区域，并且电源具有在电源的壳体上的固定孔，限定当电源为并且电源具有用于安装极限固定构件以限制固定结构的位移的限制孔，并且构成可以直接安装在电源内而不占用额外空间的固定结构，并且达到固定两个固定结构并限制固定构件的效果。

72. 发明授权

US06754087B1 Power supply structure for high density servers 失效
标题翻译：高密度服务器的电源结构
公开(公告)号：US06754087B1
公开(公告)日：2004-06-22
申请号：US10352939
申请日：2003-01-29
申请人： Tzung-Han Lee , Edy Sung
发明人： Tzung-Han Lee , Edy Sung
IPC分类号： H05K718
CPC分类号： G06F1/184 , G06F1/188 , G06F1/20 , G06F1/26 , H05K7/1492
摘要： A power supply structure for high density servers bridging a system end and a power supply end includes a power receiving unit located on the system end, a power transmission unit located on the power supply end, and a conductive connection element connecting the power receiving unit and the power transmission unit through fasteners. The conductive connection element establishes electric connection with the power receiving unit and the power transmission unit through the fasteners so that power supply provided by the power supply end is transmitted from the power transmission unit to the conductive connection element which in turn transmits the power to the system end through the power receiving unit. The power supply structure of the invention may be assembled and installed quickly.
摘要翻译：用于桥接系统端和电源端的高密度服务器的电源结构包括位于系统端的电力接收单元，位于电源端的电力传输单元和连接电力接收单元和动力传动装置通过紧固件。导电连接元件通过紧固件与受电单元和动力传递单元建立电连接，使得由电力供应端提供的电力从动力传递单元传递到导电连接元件，导电连接元件又将功率传递到系统通过电力接收单元结束。本发明的电源结构可以快速组装和安装。

73. 发明授权

US06365454B1 Cylindrical capacitor structure and method of manufacture 失效
公开(公告)号：US06365454B1
公开(公告)日：2002-04-02
申请号：US09742465
申请日：2000-12-20
申请人： Tzung-Han Lee , Alex Hou , Kun-Chi Lin
发明人： Tzung-Han Lee , Alex Hou , Kun-Chi Lin
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10814 , H01L27/10855 , H01L28/84 , H01L28/91
摘要： A cylindrical capacitor structure and a corresponding method of manufacture. To form the cylindrical capacitor, a conductive section, an etching stop layer, a first insulation layer, a bit line structure and a second insulation layer are sequentially formed over a substrate. A portion of the second insulation layer and the first insulation layer is removed until the etching stop layer is exposed. Ultimately, a plurality of gap-connected cylindrical openings and node contact openings between spacers are sequentially formed. Conductive spacers are formed on the sidewalls of the cylindrical openings and the node contact openings. In the meantime, material similar to the conductive spacers fills the small gaps, thereby forming an upper electrode for the capacitor. A dielectric layer is formed over the capacitor electrode. The exposed etching stop layer at the bottom of the contact opening is removed to expose the conductive section above the substrate. Finally, conductive material is deposited into the node contact openings and the cylindrical openings to become the lower electrodes and the node contacts respectively.

74. 发明授权

US06312985B1 Method of fabricating a bottom electrode 失效
标题翻译：制造底部电极的方法
公开(公告)号：US06312985B1
公开(公告)日：2001-11-06
申请号：US09685970
申请日：2000-10-10
申请人： King-Lung Wu , Tzung-Han Lee
发明人： King-Lung Wu , Tzung-Han Lee
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , H01L21/76897 , H01L27/10885 , H01L28/84 , H01L28/90
摘要： A method of fabricating a bottom electrode is described. A first dielectric layer having a first opening is formed over a substrate. The first opening exposes a portion of a conductive layer in the substrate. A first liner layer is formed on a sidewall of the first opening. A conductive plug is formed in the opening. A plurality of bit lines are formed next to the first opening. A second liner layer is formed over the substrate to cover the bit lines, the first liner layer, and the conductive plug. A node contact opening is formed in the second liner layer to expose a portion of the conductive plug. A second dielectric layer is formed over the substrate. A second opening is formed in the second dielectric layer to expose the node contact opening and a portion of the second liner layer. A conformal conductive layer is formed in the opening.
摘要翻译：描述制造底部电极的方法。具有第一开口的第一电介质层形成在衬底上。第一开口暴露出衬底中导电层的一部分。第一衬里层形成在第一开口的侧壁上。在开口中形成导电塞。在第一开口旁边形成多个位线。第二衬里层形成在衬底上以覆盖位线，第一衬里层和导电插塞。节点接触开口形成在第二衬里层中以暴露导电插塞的一部分。第二介质层形成在衬底上。在第二电介质层中形成第二开口以暴露节点接触开口和第二衬垫层的一部分。在开口中形成保形导电层。

75. 发明授权

US06218271B1 Method of forming a landing pad on the drain and source of a MOS transistor 失效
标题翻译：在MOS晶体管的漏极和源极上形成着陆焊盘的方法
公开(公告)号：US06218271B1
公开(公告)日：2001-04-17
申请号：US09414901
申请日：1999-10-08
申请人： Tzung-Han Lee , Kun-Chi Lin
发明人： Tzung-Han Lee , Kun-Chi Lin
IPC分类号： H01L213205
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/28525 , H01L21/76897 , H01L28/40
摘要： This invention provides a method of forming a landing pad on the drain and source of a MOS transistor. The MOS transistor is formed on a silicon substrate of a semiconductor wafer and comprises a gate on the silicon substrate with a spacer around its periphery portion, a drain and a source on the surface of the silicon substrate and on opposite sides of the gate. The method comprises forming a conductive layer of uniform thickness above the drain or source of the MOS transistor. The conductive layer is used as the landing pads for the drain or source. The height of the conductive layer is lower than that of the spacer surrounding the gate so that the spacer electrically isolates the gate and the conductive layer.
摘要翻译：本发明提供一种在MOS晶体管的漏极和源极上形成层叠焊盘的方法。 MOS晶体管形成在半导体晶片的硅衬底上，并且在硅衬底上具有围绕其周边部分的隔离物的栅极，在硅衬底的表面上的漏极和源极以及栅极的相对侧上。该方法包括在MOS晶体管的漏极或源极之上形成均匀厚度的导电层。导电层用作漏极或源极的着陆焊盘。导电层的高度低于围绕栅极的间隔物的高度，使得间隔物电隔离栅极和导电层。

76. 发明授权

US06177342B1 Method of forming dual damascene interconnects using glue material as plug material 失效
标题翻译：使用胶料作为插塞材料形成双镶嵌互连的方法
公开(公告)号：US06177342B1
公开(公告)日：2001-01-23
申请号：US09075422
申请日：1998-05-08
申请人： Tzung-Han Lee , Li-Chieh Chao
发明人： Tzung-Han Lee , Li-Chieh Chao
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76877
摘要： An multi-level interconnection uses a glue layer material as a via plug or contact plug. An method of forming the multi-level interconnection includes: forming a first opening and a wider second opening in a dielectric layer, whereas the first opening exposes the conductive layer and the second opening is above the first opening; and filling the first opening with titanium, titanium nitride or tungsten nitride.
摘要翻译：多层互连使用胶层材料作为通孔塞或接触塞。形成多层互连的方法包括：在电介质层中形成第一开口和较宽的第二开口，而第一开口暴露导电层，第二开口在第一开口的上方; 并用钛，氮化钛或氮化钨填充第一开口。

77. 发明授权

US06171951B2 Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening 失效
标题翻译：双镶嵌方法包括离子注入以致密化介电层并形成具有锥形开口的硬掩模层
公开(公告)号：US06171951B2
公开(公告)日：2001-01-09
申请号：US09183530
申请日：1998-10-30
申请人： Tzung-Han Lee , Tse-Yi Lu
发明人： Tzung-Han Lee , Tse-Yi Lu
IPC分类号： H01L214763
CPC分类号： H01L21/76825 , H01L21/02107 , H01L21/02203 , H01L21/02304 , H01L21/02321 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/31155 , H01L21/314 , H01L21/31695 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： A dual damascene manufacturing method includes utilizing a low dielectric constant material to form the dielectric layers and to prevent current due to the reduced line width. An implanting step is performed on the dielectric layers to reduce the incoherence and fragility of the dielectric layers, to densify the dielectric layers and to protect the dielectric layers from damage in the subsequent processes. The present invention utilizes the hard mask layer formed over the dielectric layer to reduce the difficulty of the depositing process of the barrier layer. The openings formed within the hard mask layer are broad at the top and narrow at the bottom. so that the barrier layer is more easily deposited into the opening and the subsequent deposition step of the conductive material layer is easily performed. Moreover, the hard mask layer can be utilized as the etching stop layer in the CMP process.
摘要翻译：双镶嵌制造方法包括利用低介电常数材料形成电介质层并且由于线宽减小而防止电流。在电介质层上执行注入步骤以减少电介质层的不相干性和脆弱性，使介电层致密化并保护介电层免于后续工艺中的损坏。本发明利用形成在电介质层上的硬掩模层来减少阻挡层的沉积过程的难度。在硬掩模层中形成的开口在顶部是宽的，在底部是窄的。使得阻挡层更容易沉积到开口中，并且容易执行导电材料层的随后的沉积步骤。此外，在CMP工艺中可以使用硬掩模层作为蚀刻停止层。

78. 发明授权

US6160314A Polishing stop structure 失效
标题翻译：抛光停止结构
公开(公告)号：US6160314A
公开(公告)日：2000-12-12
申请号：US73157
申请日：1998-05-05
申请人： Tzung-Han Lee , Li-Chieh Chao
发明人： Tzung-Han Lee , Li-Chieh Chao
IPC分类号： H01L21/768 , H01L21/28 , H01L21/304
CPC分类号： H01L21/7681 , H01L21/76829 , H01L21/7684
摘要： A polishing stop structure has a polishing stop layer formed in the dielectric layer. When a chemical mechanical polishing is performed on a bumpy surface of this structure, the lower regions of the surface are first to expose the polishing stop layer, is not easily removed. While polishing stops at the lower regions, the higher regions continue to be polished. The structure can control the polishing level to increase the window of over-etching and attain a smoother surface.
摘要翻译：抛光停止结构具有在电介质层中形成的抛光停止层。当在该结构的颠簸表面进行化学机械抛光时，表面的下部区域首先暴露抛光停止层，不容易除去。当抛光在下部区域停止时，较高的区域继续被抛光。该结构可以控制抛光水平以增加过蚀刻窗口并获得更光滑的表面。

79. 发明授权

US6121125A Method of forming polycide gate 有权
标题翻译：形成多晶硅栅极的方法
公开(公告)号：US6121125A
公开(公告)日：2000-09-19
申请号：US186125
申请日：1998-11-04
申请人： Tzung-Han Lee
发明人： Tzung-Han Lee
IPC分类号： H01L21/28 , H01L21/3213 , H01L29/49 , H01L21/4763
CPC分类号： H01L29/6656 , H01L21/28061 , H01L21/32139 , H01L29/4933
摘要： A method of forming a polycide gate is provided. On a substrate having a gate oxide layer thereon, a polysilicon layer and a silicide layer are formed. A multi-insulation layer and a hard material layer are formed on the silicide layer. The multi-insulation layer comprises multiple insulation layers. The thermal expansion coefficients of these insulation layers are between the thermal expansion coefficients of the silicide layer and the hard material layer, and moreover, are closer to it of the hard material layer gradually layer by layer. The hard mask layer, multi-insulation layer, silicide layer and the polysilicon layer are then defined to form a polycide gate. A spacer is formed to cover a side wall of the gate.
摘要翻译：提供一种形成多晶硅栅极的方法。在其上具有栅极氧化物层的衬底上，形成多晶硅层和硅化物层。在硅化物层上形成多层绝缘层和硬质材料层。多层绝缘层包括多个绝缘层。这些绝缘层的热膨胀系数在硅化物层和硬质材料层的热膨胀系数之间，而且逐渐逐渐靠近硬质材料层。然后限定硬掩模层，多绝缘层，硅化物层和多晶硅层以形成多晶硅栅极。形成间隔件以覆盖门的侧壁。

80. 发明授权

US09479009B2 Power system for actively maintaining operation 有权
标题翻译：电力系统积极维护运行
公开(公告)号：US09479009B2
公开(公告)日：2016-10-25
申请号：US13234625
申请日：2011-09-16
申请人： Tzung-Han Lee , Tsung-Te Lee
发明人： Tzung-Han Lee , Tsung-Te Lee
IPC分类号： H02J4/00 , H02J9/06
CPC分类号： H02J9/06 , Y10T307/305 , Y10T307/50
摘要： A power system for actively maintaining operation includes a power supply unit electrically connected to a commercial power source, a back panel electrically connected to the power supply unit and an ON/OFF control unit. The power supply unit has an OFF state and an operating state to convert the power provided by the commercial power source for outputting. The back panel converges the output of the power supply unit and provides a driving power. The ON/OFF control unit has an input detection terminal electrically connected to the commercial power source to detect whether the commercial power source supplies power and at least one operation signal terminal to output an operation signal upon judging that the commercial power source supplies power to drive the power supply unit to enter the operating state.
摘要翻译：用于主动维护操作的电力系统包括电连接到商用电源的电源单元，电连接到电源单元的后面板和ON / OFF控制单元。电源单元具有OFF状态和用于转换由商用电源提供的电力进行输出的操作状态。后面板会收敛电源单元的输出并提供驱动电源。 ON / OFF控制单元具有电连接到商用电源的输入检测端子，用于检测商用电源是否提供电力，以及至少一个操作信号端子，以在判断商用电源供电以驱动时输出操作信号电源单元进入运行状态。

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