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71. 发明申请

US20120056526A1 LIGHT EMITTING DEVICE 有权
公开(公告)号：US20120056526A1
公开(公告)日：2012-03-08
申请号：US13034120
申请日：2011-02-24
申请人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka
发明人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka
IPC分类号： H01J1/62
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L33/504 , H01L33/505 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

72. 发明申请

US20110204394A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110204394A1
公开(公告)日：2011-08-25
申请号：US12875503
申请日：2010-09-03
申请人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/30 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。阻挡层设置在n型和p型半导体层之间。阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。阻挡层中的至少一个包括第一层，第二层和第三层。第二层比第一层更靠近p型半导体层。第三层比第二层更靠近p型半导体层。第二层包括Al x Ga 1-x N（0

73. 发明授权

US08823016B2 Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer 有权
标题翻译：半导体发光器件，氮化物半导体层生长衬底和氮化物半导体晶片
公开(公告)号：US08823016B2
公开(公告)日：2014-09-02
申请号：US13404553
申请日：2012-02-24
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L29/24 , H01L33/12 , H01L33/32 , H01L29/12 , C30B29/40 , H01L33/00
CPC分类号： H01L33/06 , C30B29/406 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。主表面与发光层相对。第一半导体层具有设置在主表面上的结构体。结构体是凹陷或突起。第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是突起的宽度。

74. 发明申请

US20140084296A1 NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体器件的方法
公开(公告)号：US20140084296A1
公开(公告)日：2014-03-27
申请号：US13729713
申请日：2012-12-28
申请人： Hisashi YOSHIDA , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi YOSHIDA , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.
摘要翻译：氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。硅衬底具有主表面。堆叠的多层单元设置在主表面上。堆叠的多层单元包括N个缓冲层。缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。含硅单元设置在堆叠的多层单元上。上层单元设置在含硅单元上。

75. 发明授权

US08610106B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08610106B2
公开(公告)日：2013-12-17
申请号：US13213821
申请日：2011-08-19
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/40 , H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

76. 发明授权

US08598605B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08598605B2
公开(公告)日：2013-12-03
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

77. 发明申请

US20120138890A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120138890A1
公开(公告)日：2012-06-07
申请号：US13213821
申请日：2011-08-19
申请人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/40 , H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

78. 发明申请

US20110147775A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110147775A1
公开(公告)日：2011-06-23
申请号：US12874413
申请日：2010-09-02
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L24/29 , H01L24/32 , H01L33/44 , H01L33/504 , H01L33/58 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.
摘要翻译：根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。第一波长转换层设置在与安装构件接触的元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。半导体发光元件设置在第二波长转换层和第一波长转换层之间。第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。透明层设置在元件和第二波长转换层之间。透明层对于第一，第二和第三光是透明的。

79. 发明授权

US09006013B2 Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer 有权
标题翻译：制造半导体发光器件和半导体发光器件晶片的方法
公开(公告)号：US09006013B2
公开(公告)日：2015-04-14
申请号：US13405634
申请日：2012-02-27
申请人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
发明人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima , Hiroshi Ono , Hajime Nago
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L33/00 , H01L21/20 , H01L33/20 , H01S5/02 , H01S5/323
CPC分类号： H01L33/007 , H01L21/2011 , H01L33/0079 , H01L33/20 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
摘要翻译：根据一个实施例，公开了一种用于制造半导体发光器件的方法。该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。该膜包括与氮化物层的一部分相同的材料。分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

80. 发明授权

US08680548B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08680548B2
公开(公告)日：2014-03-25
申请号：US12874568
申请日：2010-09-02
申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
发明人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/44 , H01L33/60 , H01L2224/11 , H01L2933/0041 , H01L2933/005
摘要： A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.
摘要翻译：半导体发光器件具有支撑衬底，发光元件和底部填充材料。发光元件包括通过支撑衬底上的凸块接触的基于氮化物的III-V族化合物半导体层。底部填充材料设置在支撑基板和发光元件之间，底部填充材料包括布置在发光元件的端面外侧的肋部，以围绕发光元件的端面。

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