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1. 发明授权

US08823016B2 Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer 有权
标题翻译：半导体发光器件，氮化物半导体层生长衬底和氮化物半导体晶片
公开(公告)号：US08823016B2
公开(公告)日：2014-09-02
申请号：US13404553
申请日：2012-02-24
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L29/24 , H01L33/12 , H01L33/32 , H01L29/12 , C30B29/40 , H01L33/00
CPC分类号： H01L33/06 , C30B29/406 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。主表面与发光层相对。第一半导体层具有设置在主表面上的结构体。结构体是凹陷或突起。第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是突起的宽度。

2. 发明授权

US08829544B2 Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer 有权
标题翻译：半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法
公开(公告)号：US08829544B2
公开(公告)日：2014-09-09
申请号：US13406770
申请日：2012-02-28
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/20 , H01L33/12
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/48
摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.
摘要翻译：根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。基底层具有凹部，侧部和突起部的凹凸。基础层的第一主表面具有覆盖区域。基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

3. 发明授权

US08564006B2 Nitride semiconductor device and nitride semiconductor layer growth substrate 有权
标题翻译：氮化物半导体器件和氮化物半导体层生长衬底
公开(公告)号：US08564006B2
公开(公告)日：2013-10-22
申请号：US13405985
申请日：2012-02-27
申请人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译：根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。衬底是单晶。半导体功能层设置在基板的主表面上并且包括氮化物半导体。基板包括设置在主表面中的多个结构体。多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度。

4. 发明申请

US20120299015A1 NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE 有权
标题翻译：氮化物半导体器件和氮化物半导体层生长衬底
公开(公告)号：US20120299015A1
公开(公告)日：2012-11-29
申请号：US13405985
申请日：2012-02-27
申请人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/20 , H01L29/04
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译：根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。衬底是单晶。半导体功能层设置在基板的主表面上并且包括氮化物半导体。基板包括设置在主表面中的多个结构体。多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度。

5. 发明申请

US20120299014A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件，氮化物半导体层生长衬底和氮化物半导体晶体管
公开(公告)号：US20120299014A1
公开(公告)日：2012-11-29
申请号：US13404553
申请日：2012-02-24
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L29/24 , H01L29/12 , H01L33/32
CPC分类号： H01L33/06 , C30B29/406 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，并具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。主表面与发光层相反。第一半导体层具有设置在主表面上的结构体。结构体是凹陷或突起。第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是突起的宽度。

6. 发明授权

US07985981B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07985981B2
公开(公告)日：2011-07-26
申请号：US12638354
申请日：2009-12-15
申请人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/58
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

7. 发明申请

US20100148203A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100148203A1
公开(公告)日：2010-06-17
申请号：US12638354
申请日：2009-12-15
申请人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

8. 发明授权

US07915630B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07915630B2
公开(公告)日：2011-03-29
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

9. 发明授权

US08456010B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08456010B2
公开(公告)日：2013-06-04
申请号：US13035069
申请日：2011-02-25
申请人： Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
发明人： Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
IPC分类号： H01L23/482
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333
摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
摘要翻译：实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

10. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

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