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71. 发明申请

US20060163617A1 Solid-state imaging device and its manufacturing method 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060163617A1
公开(公告)日：2006-07-27
申请号：US10521587
申请日：2003-08-11
申请人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
发明人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
IPC分类号： H01L29/768
CPC分类号： H01L27/14806
摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.
摘要翻译：可以通过在衬底的深部设置溢流屏障的结构来防止相邻像素之间的串扰。部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。因此，可以防止相邻像素之间的串扰。

72. 发明申请

US20060127799A1 Method for forming resist pattern and resist pattern 审中-公开
标题翻译：形成抗蚀剂图案和抗蚀剂图案的方法
公开(公告)号：US20060127799A1
公开(公告)日：2006-06-15
申请号：US10537162
申请日：2003-12-02
申请人： Naotaka Kubota , Kiyoshi Ishikawa , Mitsuru Sato , Tasuku Matsumiya , Kazuhiro Fujii , Kenichi Sato
发明人： Naotaka Kubota , Kiyoshi Ishikawa , Mitsuru Sato , Tasuku Matsumiya , Kazuhiro Fujii , Kenichi Sato
IPC分类号： G03C1/76
CPC分类号： G03F7/32 , G03F7/0397 , G03F7/40
摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.
摘要翻译：提供了抗蚀剂图案形成方法，其可以在形成抗蚀剂图案的情况下，在显影处理之后，在干燥步骤中防止细小的抗蚀剂图案塌陷。该方法包括涂布含有碱溶性单元含量小于20摩尔％的树脂成分（A）的正型抗蚀剂组合物，并且还具有酸解离溶解抑制基团，其碱溶性通过酸的作用而增强，产生暴露酸的酸产生剂组分（B）和在基材上溶解组分（A）和（B）的有机溶剂（C）; 对所得膜进行预烘烤，选择性曝光，曝光后烘烤和碱显影; 执行置换步骤，用置换液体至少一次移动存在于基板上的液体; 用液体移动置换液体进行临界干燥; 并执行干燥步骤，用于通过临界状态干燥用于临界干燥的液体。

73. 发明申请

US20060124051A1 Zinc oxide single crystal 审中-公开
标题翻译：氧化锌单晶
公开(公告)号：US20060124051A1
公开(公告)日：2006-06-15
申请号：US11239214
申请日：2005-09-30
申请人： Kenji Yoshioka , Hiroshi Yoneyama , Katsumi Maeda , Ikuo Niikura , Mitsuru Sato , Masumi Ito
发明人： Kenji Yoshioka , Hiroshi Yoneyama , Katsumi Maeda , Ikuo Niikura , Mitsuru Sato , Masumi Ito
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B7/10 , C30B7/00 , C30B29/16
摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.
摘要翻译：本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。

74. 发明申请

US20060108617A1 Solid-state image pickup device and manufacturing method for the same 有权
公开(公告)号：US20060108617A1
公开(公告)日：2006-05-25
申请号：US11324657
申请日：2006-01-03
申请人： Yoshiaki Kitano , Nobuhiro Karasawa , Jun Kuroiwa , Hideshi Abe , Mitsuru Sato , Hiroaki Ohki
发明人： Yoshiaki Kitano , Nobuhiro Karasawa , Jun Kuroiwa , Hideshi Abe , Mitsuru Sato , Hiroaki Ohki
IPC分类号： H01L31/113 , H01L31/062 , H01L31/00 , H01L29/768
CPC分类号： H01L27/14843 , H01L27/14623 , H01L27/14689 , H01L27/14837
摘要： A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

75. 发明授权

US07026236B2 Method of forming multilayer interconnection structure, method of manufacturing circuit board, and method of manufacturing device 有权
标题翻译：形成多层互连结构的方法，电路板的制造方法及其制造方法
公开(公告)号：US07026236B2
公开(公告)日：2006-04-11
申请号：US10877999
申请日：2004-06-29
申请人： Hideki Tanaka , Ichio Yudasaka , Mitsuru Sato
发明人： Hideki Tanaka , Ichio Yudasaka , Mitsuru Sato
IPC分类号： H01L21/4763
CPC分类号： H01L51/0022 , H01L21/76877 , H05K3/4053 , H05K3/4644 , H05K2203/013
摘要： Method of forming a multilayer interconnection structure of the invention that is a method of forming a multilayer interconnection structure in which a first conductive layer and a second conductive layer are stacked via an insulating layer, and the first conductive layer and the second conductive layer are connected via through holes formed in the insulating layer. The method includes the steps of forming a first conductive layer on a substrate, forming the insulating layer with the through holes on the first conductive layer, filling conductive material into the through holes using a droplet discharge device to form a contact conductive material, and forming the second conductive layer such that it is connected to the contact conductive material.
摘要翻译：形成本发明的多层互连结构的方法，其是形成多层互连结构的方法，其中第一导电层和第二导电层经由绝缘层堆叠，并且第一导电层和第二导电层被连接通过形成在绝缘层中的通孔。该方法包括以下步骤：在衬底上形成第一导电层，在第一导电层上形成具有通孔的绝缘层，使用液滴放电装置将导电材料填充到通孔中以形成接触导电材料，并形成第二导电层，使得其连接到接触导电材料。

76. 发明授权

US07015579B2 Semiconductor device for fingerprint recognition 有权
公开(公告)号：US07015579B2
公开(公告)日：2006-03-21
申请号：US10765999
申请日：2004-01-29
申请人： Akira Okada , Mitsuru Sato
发明人： Akira Okada , Mitsuru Sato
IPC分类号： H01L23/48
CPC分类号： G06K9/0002 , H01L2224/05573 , H01L2224/13025 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/1815 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device is disclosed that performs fingerprint recognition on the electrostatic-capacity principle. A finger sweeping across a fingerprint recognition area of a semiconductor chip provides positive fingerprint recognition operations with improved reliability.The semiconductor device includes the semiconductor chip having a sensor unit that performs fingerprint recognition, and a substrate having an opening formed in the position corresponding to the sensor unit. The semiconductor chip is flip chip bonded to the substrate such that the sensor unit corresponds to the opening, and except for the formed position of the opening, an under-fill material is provided between the semiconductor chip and the substrate.

77. 发明授权

US06918009B1 Cache device and control method for controlling cache memories in a multiprocessor system 失效
标题翻译：用于在多处理器系统中控制高速缓冲存储器的缓存装置和控制方法
公开(公告)号：US06918009B1
公开(公告)日：2005-07-12
申请号：US09786049
申请日：1998-12-18
申请人： Mitsuru Sato , Kouichi Kumon
发明人： Mitsuru Sato , Kouichi Kumon
IPC分类号： G06F12/08 , G06F12/00
CPC分类号： G06F12/0815 , G06F12/0862
摘要： In the case that at the time of generation of a pre-fetch request following a read request from one of the processors the data stored in other cache devices cannot be read unless its state tag is changed, a cache controller carries out weak read operation for causing failure in the pre-fetch request as a fetch protocol. Alternatively, the cache controller reads pre-fetch data without changing state tags of other cache devices, sets a weak read state (W), and stores the data. The data in the weak read state (W) is invalided by synchronization operation of memory consistency by software. Furthermore, the pre-fetch data is stored in a passive preservation mode in the present cache device. Even if the pre-fetch data corresponds to a read request from some other cache device, the preservation of the data is not informed to the other cache device.
摘要翻译：在根据来自处理器之一的读取请求之后产生预取请求时，除非其状态标签被改变，否则不能读取存储在其他高速缓存设备中的数据，高速缓存控制器执行弱读取操作导致预取请求中的失败作为获取协议。或者，高速缓存控制器在不改变其他高速缓存设备的状态标签的情况下读取预取数据，设置弱读取状态（W），并存储数据。弱读取状态（W）中的数据被软件的存储器一致性的同步操作所折磨。此外，预取数据以当前的缓存装置中的被动保存模式存储。即使预取数据对应于来自其他高速缓存设备的读取请求，也不会将数据的保存通知给其他高速缓存设备。

78. 发明授权

US06501711B1 Pickup drive apparatus, pickup drive method, and recording/reproducing apparatus 失效
标题翻译：拾取驱动装置，拾取驱动方法和记录/再现装置
公开(公告)号：US06501711B1
公开(公告)日：2002-12-31
申请号：US09461309
申请日：1999-12-15
申请人： Kiyoshi Tateishi , Mitsuru Sato , Ikuya Kikuchi
发明人： Kiyoshi Tateishi , Mitsuru Sato , Ikuya Kikuchi
IPC分类号： G11B700
CPC分类号： G11B7/00718 , G11B7/0901
摘要： A pickup drive apparatus for recording or reproducing with respect to a recording medium such as a CD and a DVD. In the apparatus, return light produced by irradiating an optical spot is detected by a photodetector, and a push-pull signal is produced from this detection output. A tracking error signal is produced from the push-pull signal by a low-pass filter and a phase compensating circuit. A quasi-ON/OFF control signal having information of an irradiation position of the optical spot is produced from the push-pull signal by a high-pass filter, a comparator, and a single pulse generator. When the quasi-ON/OFF control signal is produced which indicates that the optical spot is positioned on a groove, the tracking error signal is outputted via switching circuits in synchronism with this signal production. A pickup is servo-controlled based on this output signal.
摘要翻译：一种用于相对于诸如CD和DVD的记录介质进行记录或再现的拾取驱动装置。在该装置中，通过光电检测器检测通过照射光点产生的返回光，并且从该检测输出产生推挽信号。通过低通滤波器和相位补偿电路从推挽信号产生跟踪误差信号。通过高通滤波器，比较器和单脉冲发生器从推挽信号产生具有光点的照射位置信息的准ON / OFF控制信号。当产生表示光点位于凹槽上的准ON / OFF控制信号时，跟踪误差信号与该信号产生同步地经由开关电路输出。基于该输出信号对拾取器进行伺服控制。

79. 发明授权

US06329126B1 Developer solution for acitinic ray sensitive resist 失效
标题翻译：用于acitinic光敏抗蚀剂的显影剂溶液
公开(公告)号：US06329126B1
公开(公告)日：2001-12-11
申请号：US08339340
申请日：1994-11-14
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F732
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

80. 发明授权

US6159652A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

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