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1. 发明申请

US20060163617A1 Solid-state imaging device and its manufacturing method 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060163617A1
公开(公告)日：2006-07-27
申请号：US10521587
申请日：2003-08-11
申请人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
发明人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
IPC分类号： H01L29/768
CPC分类号： H01L27/14806
摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.
摘要翻译：可以通过在衬底的深部设置溢流屏障的结构来防止相邻像素之间的串扰。部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。因此，可以防止相邻像素之间的串扰。

2. 发明申请

US20090194794A1 SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20090194794A1
公开(公告)日：2009-08-06
申请号：US12420890
申请日：2009-04-09
申请人： Kazushi WADA , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
发明人： Kazushi WADA , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14806
摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep portion of a substrate.A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.
摘要翻译：可以通过在衬底的深部设置溢流阻挡层的结构来防止相邻像素之间的串扰。部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。因此，可以防止相邻像素之间的串扰。

3. 发明授权

US07535038B2 Solid-state imaging device and its manufacturing method 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07535038B2
公开(公告)日：2009-05-19
申请号：US10521587
申请日：2003-08-11
申请人： Kazushi Wada , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
发明人： Kazushi Wada , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
IPC分类号： H01L29/74
CPC分类号： H01L27/14806
摘要： A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
摘要翻译：一种固态图像拾取装置，用于通过在衬底的深部处提供溢出屏障来防止相邻像素之间的串扰。部分P型区域设置在垂直传送寄存器的下层区域的预定位置和通道停止区域。该P型区域调整垂直传送寄存器和通道停止区域的下层区域中的电位。因此，由于垂直传输寄存器的下层区域和下层区域两侧的沟道停止区域的电位低，所以由该传感器区域光电转换的电荷被该势垒阻挡而不能扩散容易。

4. 发明授权

US08217431B2 Solid-state image pickup device for preventing cross-talk between adjacent pixels and manufacturing method thereof 有权
标题翻译：用于防止相邻像素之间的串扰的固态图像拾取装置及其制造方法
公开(公告)号：US08217431B2
公开(公告)日：2012-07-10
申请号：US12420890
申请日：2009-04-09
申请人： Kazushi Wada , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
发明人： Kazushi Wada , Kouichi Harada , Shuji Otsuka , Mitsuru Sato
IPC分类号： H01L27/148
CPC分类号： H01L27/14806
摘要： A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
摘要翻译：一种固态图像拾取装置，用于通过在衬底的深部处提供溢出屏障来防止相邻像素之间的串扰。部分P型区域设置在垂直传送寄存器的下层区域的预定位置和通道停止区域。该P型区域调整垂直传送寄存器和通道停止区域的下层区域中的电位。因此，由于垂直传输寄存器的下层区域和下层区域两侧的沟道停止区域的电位低，所以由该传感器区域光电转换的电荷被该势垒阻挡而不能扩散容易。

5. 发明申请

US20080315340A1 SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080315340A1
公开(公告)日：2008-12-25
申请号：US12102328
申请日：2008-04-14
申请人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
发明人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14627
摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
摘要翻译：固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜形状的抗蚀剂层，以及蚀刻将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

6. 发明授权

US08253142B1 Solid-state imaging device and method of fabricating the same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08253142B1
公开(公告)日：2012-08-28
申请号：US09649570
申请日：2000-08-28
申请人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
发明人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
IPC分类号： H01L27/14
CPC分类号： H01L27/1462 , H01L27/14627
摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
摘要翻译：固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜形状的抗蚀剂层，以及蚀刻将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

7. 发明授权

US08729650B2 Solid-state imaging device and method of fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08729650B2
公开(公告)日：2014-05-20
申请号：US12102328
申请日：2008-04-14
申请人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
发明人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
IPC分类号： H01L27/14
CPC分类号： H01L27/1462 , H01L27/14627
摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
摘要翻译：固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜状抗蚀剂层，将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

8. 发明授权

US5929470A Solid state imager with reduced smear 失效
标题翻译：固态成像仪减少涂片
公开(公告)号：US5929470A
公开(公告)日：1999-07-27
申请号：US686472
申请日：1996-07-25
申请人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
发明人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14806 , H01L27/14831
摘要： A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要翻译： CCD固态成像装置可以减少拖尾部件。该CCD固态成像装置包括以矩阵方式布置的多个光电传感器部分（10），具有设置在光电传感器部分的每列处的转移电极（16）的垂直传送寄存器（5），分流线层）连接到垂直传送寄存器（5）上的转印电极（16），以及光掩模层（38），其通过覆盖分流层的层间绝缘层（37）形成为围绕光电传感器部分10 33），其中层间绝缘层（37）形成在光屏蔽层（38）的悬垂部分（38a）下面到光电传感器部分（10）。

9. 发明授权

US5614741A Solid state imager with reduced smear and method of making the same 失效
标题翻译：固态成像仪具有减少的涂片和制作方法
公开(公告)号：US5614741A
公开(公告)日：1997-03-25
申请号：US243840
申请日：1994-05-17
申请人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
发明人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14887 , H01L27/14806 , H01L27/14831
摘要： A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要翻译： CCD固态成像装置可以减少拖尾部件。该CCD固态成像装置包括以矩阵方式布置的多个光电传感器部分（10），具有设置在光电传感器部分的每列处的转移电极（16）的垂直传送寄存器（5），分流线层）连接到垂直传送寄存器（5）上的转印电极（16），以及光掩模层（38），其通过覆盖分流层的层间绝缘层（37）形成为围绕光电传感器部分10 33），其中层间绝缘层（37）未形成在光屏蔽层（38）与光电传感器部分（10）的伸出部分（38a）之下。

10. 发明授权

US5763292A Method of making a solid state imager with reduced smear 失效
标题翻译：制造具有减少涂片的固态成像仪的方法
公开(公告)号：US5763292A
公开(公告)日：1998-06-09
申请号：US484892
申请日：1995-06-07
申请人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
发明人： Kouichi Harada , Junichi Furukawa , Kazushi Wada , Takaaki Sarai
IPC分类号： H01L27/148 , H01L21/00
CPC分类号： H01L27/14887 , H01L27/14806 , H01L27/14831
摘要： A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要翻译： CCD固态成像装置可以减少拖尾部件。该CCD固态成像装置包括以矩阵方式布置的多个光电传感器部分（10），具有设置在光电传感器部分的每列处的转移电极（16）的垂直传送寄存器（5），分流线层）连接到垂直传送寄存器（5）上的转印电极（16），以及光掩模层（38），其通过覆盖分流层的层间绝缘层（37）形成为围绕光电传感器部分10 33），其中层间绝缘层（37）形成在光屏蔽层（38）的悬垂部分（38a）下面到光电传感器部分（10）。

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