专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20110114937A1 p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译： p型MgZnO基薄膜和半导体发光器件
公开(公告)号：US20110114937A1
公开(公告)日：2011-05-19
申请号：US12672444
申请日：2008-08-01
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/12
CPC分类号： H01L33/285 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L33/0083
摘要： Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film.A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦X
摘要翻译：提供：用作p型的p型MgZnO基薄膜; 以及包括p型MgZnO基薄膜的半导体发光器件。在由ZnO类半导体制成的基板（2）上形成p型Mg x Zn 1-x O系薄膜（1）。 p型Mg x Zn 1-x O系薄膜（1）的构成为，使Mg相对于Zn的比例的X为0以上，X <1，优选为0＆lt; NlE; X＆lt; lE; 0.5。在p型MgZnO薄膜（1）中，作为受体的p型杂质的氮含量约为5.0×1018 cm -3以上。 p型MgZnO薄膜（1）构成为使得成为供体的诸如硅的IV族元素制成的n型杂质的浓度可以为约1.0×10 17 cm -3以下。 p型MgZnO薄膜（1）构成为使得成为供体的诸如硼和铝的III族元素制成的n型杂质的浓度可以为约1.0×1016 cm -3以下。

72. 发明授权

US07745839B2 Double wavelength semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：双波长半导体发光器件及其制造方法
公开(公告)号：US07745839B2
公开(公告)日：2010-06-29
申请号：US12224287
申请日：2007-02-23
申请人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
发明人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/0425 , H01S5/20 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S5/4087 , H01S2304/04
摘要： Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
摘要翻译：提供了一种双波长半导体发光器件，其具有设置在同一表面侧的n电极和p电极，其中芯片的面积减小以增加从单个晶片获取的芯片的数量，其中光聚焦性能双波长光束的改善，其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上，并且半导体层叠体B沉积在半导体激光器D2。半导体层叠体A和半导体层叠体B具有不同的层结构。形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享，并且用作n侧的公共电极。此外，首先将具有较短波长的半导体层叠体晶体生长。

73. 发明申请

US20100133470A1 ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE 审中-公开
标题翻译：基于ZnO的基板和处理基于ZnO的基板的方法
公开(公告)号：US20100133470A1
公开(公告)日：2010-06-03
申请号：US12452328
申请日：2008-06-27
申请人： Ken Nakahara , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： C09K11/54 , C23F1/00
CPC分类号： C30B33/10 , C30B29/16 , C30B35/007
摘要： Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a MgxZn1-xO substrate (0≦x
摘要翻译：提供具有适合于晶体生长的表面的ZnO系基板以及ZnO系基板的制造方法。 ZnO基基板的制作方式是在Mg x Zn 1-x O基板的晶体生长侧表面上几乎不存在氢氧根基团（0＆lt; nlE; x <1）。为此，作为处理基板的方法，在MgxZn1-xO基板的晶体生长侧表面（0＆amp; nlE; x <1）上的最终处理是在pH3以下的酸性湿法蚀刻。由此，可以防止生成Zn的氢氧化物，降低在ZnO系基板上形成的薄膜中的晶体缺陷的密度。

74. 发明申请

US20100090214A1 OXIDE THIN FILM AND OXIDE THIN FILM DEVICE 审中-公开
标题翻译：氧化物薄膜和氧化物薄膜装置
公开(公告)号：US20100090214A1
公开(公告)日：2010-04-15
申请号：US12450614
申请日：2008-04-02
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/22
CPC分类号： C23C14/08 , C23C28/04 , C23C28/322 , C23C28/345 , C23C28/42 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02631 , H01L33/285
摘要： Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film (2), as shown in FIG. 1(b), doped oxide layers (2a) doped with an n-type (electron-conductivity type) impurity and undoped oxide layers (2b) not doped with an n-type impurity are laminated in an alternating and repeated manner. When an oxide layer is doped with the n-type impurity at a high concentration, roughness of a surface of the oxide layer becomes large. For this reason, the doped oxide layers (2a) are covered with the undoped oxide layers (2b) capable of ensuring surface flatness, before surface roughness attributable to the doped oxide layers (2a) becomes very large. Thus, a flat oxide thin film can be formed.
摘要翻译：提供掺杂有n型杂质的氧化物薄膜和氧化物薄膜器件。在氧化物薄膜（2）中，如图1所示，如图1（b）所示，掺杂有n型（电子传导型）杂质的掺杂氧化物层（2a）和未掺杂n型杂质的未掺杂氧化物层（2b）以交替重复的方式层叠。当以高浓度掺杂n型杂质的氧化物层时，氧化物层的表面的粗糙度变大。为此，在由掺杂氧化物层（2a）引起的表面粗糙度变得非常大之前，掺杂氧化物层（2a）被能够确保表面平坦度的未掺杂氧化物层（2b）覆盖。因此，可以形成平坦的氧化物薄膜。

75. 发明申请

US20100040534A1 RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM 审中-公开
标题翻译：辐射发生装置和基于ZNO的薄膜
公开(公告)号：US20100040534A1
公开(公告)日：2010-02-18
申请号：US12450146
申请日：2008-03-14
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： C01G9/02 , C23C16/513
CPC分类号： H05H3/02 , C23C16/407 , C23C16/452 , C30B23/002 , C30B25/105 , C30B29/16 , H01L21/02554 , H01L21/02579 , H01L21/02631
摘要： Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil (4) is wound around an outer side of a discharging tube (10), and a terminal of the high-frequency coil (4) is connected to a high-frequency power source (9). The discharging tube (10) is constituted by a discharging cylinder (1), a lid (2) and a gas introducing bottom plate (3). Additionally, a support base (8) is provided, a support post (6) is arranged on the support base (8), and a shutter (5) is connected to the support post (6). With respect to shaded components, that is, the shutter (5), the lid (2), the discharging cylinder (1) and the gas introducing bottom plate (3), an entirety or a part thereof is formed of a silicon-based compound such as quartz.
摘要翻译：提供：提高发射等离子体原子的纯度的自由基发生装置，防止杂质污染，并且提高了离子浓度的可控性; 并且可以防止ZnO类薄膜被杂质污染。高频线圈（4）缠绕在放电管（10）的外侧，高频线圈（4）的端子与高频电源（9）连接。排出管（10）由排出筒（1），盖（2）和气体引入底板（3）构成。另外，提供支撑基座（8），支撑柱（6）布置在支撑基座（8）上，并且快门（5）连接到支撑柱（6）。对于阴影部件，即，挡板（5），盖（2），排出缸（1）和气体引入底板（3），其整体或一部分由硅基化合物如石英。

76. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

77. 发明申请

US20090267062A1 Zinc oxide Based Compound Semiconductor Device 有权
标题翻译：氧化锌基复合半导体器件
公开(公告)号：US20090267062A1
公开(公告)日：2009-10-29
申请号：US11992407
申请日：2006-09-21
申请人： Ken Nakahara , Yuji Hiroyuki
发明人： Ken Nakahara , Yuji Hiroyuki
IPC分类号： H01L29/267
CPC分类号： H01L33/28 , H01L29/225 , H01L29/7787 , H01L33/16 , H01S5/0207 , H01S5/0422 , H01S5/2201 , H01S5/2231 , H01S5/327
摘要： There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0≦x
摘要翻译：提供了一种氧化锌基化合物半导体器件，即使当通过形成具有ZnO基化合物半导体层的异质结的层叠部形成半导体器件时，也不会导致驱动电压的任何上升，同时确保p型掺杂，同时可以实现良好的结晶度和优异的器件特性。 ZnO基化合物半导体层（2）〜（6）在由Mg x Zn 1-x O（0 <= x <1）构成的基板（1）的主面上外延生长。基板的主平面是A平面{11-20}或M平面{10-10}沿-c轴方向倾斜的平面。

78. 发明授权

US07582905B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07582905B2
公开(公告)日：2009-09-01
申请号：US11662097
申请日：2005-09-07
申请人： Kentaro Tamura , Ken Nakahara
发明人： Kentaro Tamura , Ken Nakahara
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405
摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
摘要翻译：提供了一种提高了LED的发光效率的半导体发光器件。半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16），以及ZnO系或ITO透明电极层（14）。此外，由3t /（A / pi）1 / 2-3（t /（A / pi）1/2）2+（t /（A / pi）1/2）3表示的方程的值为0.1 以上，透明电极层的厚度由t表示，发光元件（11）的发光面积（发光面积）的面积由A表示。发光效率通过透明对于发光区域具有最佳厚度的电极层（14）。

79. 发明申请

US20090179190A1 Nitride Semiconductor Light Emitting Element 审中-公开
标题翻译：氮化物半导体发光元件
公开(公告)号：US20090179190A1
公开(公告)日：2009-07-16
申请号：US12227711
申请日：2006-05-26
申请人： Ken Nakahara , Norikazu Ito , Kazuaki Tsutsumi
发明人： Ken Nakahara , Norikazu Ito , Kazuaki Tsutsumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/04
摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. In the nitride semiconductor light emitting element, a buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, an undoped GaN-based layer 7, and a p-type GaN-based contact layer 8 are stacked on a sapphire substrate 1. A p-electrode 9 is formed on the p-type GaN-based contact layer 8. An n-electrode 10 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. An intermediate semiconductor layer is formed between a well layer closest to a p-side in the active layer having a quantum well structure and the p-type GaN-based contact layer 8. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the intermediate semiconductor layer 20 nm or less.
摘要翻译：提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。在氮化物半导体发光元件中，缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，未掺杂的GaN基层7和在蓝宝石衬底1上堆叠p型GaN基接触层8.在p型GaN基接触层8上形成p电极9.在n面上形成n电极10，作为台面蚀刻的结果，露出GaN型接触层4。在具有量子阱结构的有源层中的最靠近p侧的阱层和p型GaN基接触层8之间形成中间半导体层。通过以下方式可以提高进入有源层6的载流子注入效率：使中间半导体层的总膜厚度为20nm以下。

80. 发明申请

US20090166607A1 Nitride Semiconductor Light Emitting Element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US20090166607A1
公开(公告)日：2009-07-02
申请号：US12227694
申请日：2006-05-26
申请人： Ken Nakahara , Norikazu Ito , Kazuaki Tsutsumi
发明人： Ken Nakahara , Norikazu Ito , Kazuaki Tsutsumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/06
摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.
摘要翻译：提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，第一未掺杂的InGaN层7，第二未掺杂的InGaN层8和p 型的Gan型接触层9层叠在蓝宝石基板1上。在p型Gan型接触层9上形成p电极10.在n型电极11的表面上形成n电极11，作为台面蚀刻的结果，GaN接触层4被暴露。第一未掺杂的InGaN层7形成为与具有量子阱结构的有源层中最靠近p侧的阱层接触，随后在其上形成第二未掺杂的InGaN层8。通过使第一和第二未掺杂的InGaN层的总膜厚度达到20nm以下，能够提高进入有源层6的载流子注入效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式