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71. 发明授权

US6072916A High speed pipeline image processing for digital photoprinter 失效
标题翻译：数字照相机高速流水线图像处理
公开(公告)号：US6072916A
公开(公告)日：2000-06-06
申请号：US932169
申请日：1997-09-17
申请人： Ryo Suzuki
发明人： Ryo Suzuki
IPC分类号： G03B17/50 , G06T1/20 , H04N1/04 , H04N1/21 , H04N1/32 , G06K9/54
CPC分类号： H04N1/32443 , H04N1/32358 , H04N1/32491 , H04N2201/0416 , H04N2201/3288
摘要： An image processing apparatus subjects image data photoelectrically read out by an image reading apparatus to predetermined image processings and outputs the read-out image data as image data to be recorded. The image processing apparatus includes a plurality of memories for storing image data read out by the image reading apparatus; an image processing unit for reading the image data from the memories and for carrying out the predetermined image processings by pipeline processing; a condition setting unit for setting image processing conditions in the image processing unit; an image data bus for inputting and outputting the image data; and a control bus for inputting and outputting control data. The image processing apparatus permits a scanner to continuously read images, and a printer to continuously record the images of an application requiring high speed output of finished prints (i.e., a digital photoprinter). Thus, finished prints can be effectively output at high speed.
摘要翻译：图像处理设备对由图像读取装置进行光电读取的图像数据进行预定的图像处理，并将读出的图像数据作为要记录的图像数据输出。图像处理装置包括：多个存储器，用于存储由图像读取装置读出的图像数据; 图像处理单元，用于从存储器读取图像数据并通过流水线处理执行预定的图像处理; 条件设置单元，用于设置图像处理单元中的图像处理条件; 用于输入和输出图像数据的图像数据总线; 以及用于输入和输出控制数据的控制总线。图像处理装置允许扫描仪连续地读取图像，并且打印机连续地记录需要高速输出完成的打印的应用的图像（即，数字照片打印机）。因此，能够高效地输出成品。

72. 发明授权

US5869229A Photothermographic material 失效
标题翻译：光热成像材料
公开(公告)号：US5869229A
公开(公告)日：1999-02-09
申请号：US925713
申请日：1997-09-09
申请人： Hisashi Okada , Naoki Asanuma , Ryo Suzuki , Shiegeo Hirano
发明人： Hisashi Okada , Naoki Asanuma , Ryo Suzuki , Shiegeo Hirano
IPC分类号： G03C1/06 , G03C1/28 , G03C1/498 , G03C5/16
CPC分类号： G03C1/49845 , G03C1/061 , G03C1/28 , G03C5/16
摘要： A photothermographic material contains a compound of formula (I): ##STR1## wherein X represents --N.dbd., --N(R)--, --O--or --S--wherein R represents hydrogen, hydroxy, aliphatic hydrocarbon, aryl or heterocyclic group, Z represents a valence bond or a group of non-metallic atoms necessary to form a 5 to 7-membered ring with X, and each of Q.sub.1 and Q.sub.2 represents a group of non-metallic atoms necessary to form an aromatic hydrocarbon ring or aromatic heterocycle fused to the ring completed by Z. The material has high sensitivity in the infrared region and a minimal sensitivity change with varying storage conditions.
摘要翻译：光热敏成像材料包含式（I）的化合物：其中X表示-N =，-N（R） - ， - O-或-S-，其中R表示氢，羟基，脂族烃，芳基或杂环基，Z表示与X形成5至7元环所必需的价键或一组非金属原子，并且Q1和Q2各自表示形成芳烃所需的一组非金属原子环状或芳族杂环稠合到由Z完成的环。该材料在红外区域具有高灵敏度，并且随着储存条件的变化而具有最小的灵敏度变化。

73. 发明授权

US5587627A Planar display apparatus having exposed insulated substrate portion 失效
标题翻译：具有露出的绝缘基板部分的平面显示装置
公开(公告)号：US5587627A
公开(公告)日：1996-12-24
申请号：US395703
申请日：1995-02-28
申请人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Minoru Kobayashi , Susumu Hoshinouchi , Yoshinori Hatanaka
发明人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Minoru Kobayashi , Susumu Hoshinouchi , Yoshinori Hatanaka
IPC分类号： H01J31/12 , H05B37/02
CPC分类号： H01J31/126
摘要： A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.
摘要翻译：通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分电极。这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电至少通过（1）提供用于向导电衬底施加预定电压的电压施加电路，（2）提供导电衬底露出的部分，从而阻止电子束通过，并因此提高亮度在相邻的控制电极之间。

74. 发明授权

US5118984A Electron tube cathode 失效
标题翻译：电子管阴极
公开(公告)号：US5118984A
公开(公告)日：1992-06-02
申请号：US666002
申请日：1991-03-07
申请人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Hisao Nakanishi , Kinjiro Sano , Toyokazu Kamata , Takashi Shinjou
发明人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Hisao Nakanishi , Kinjiro Sano , Toyokazu Kamata , Takashi Shinjou
IPC分类号： H01J1/26 , H01J1/14 , H01J1/142 , H01J9/04 , H01J29/04
CPC分类号： H01J29/04 , H01J1/142
摘要： A metal layer of not more than 2.0 .mu.m thick is formed on a base, containing nickel as the main ingredient and a reducing agent such as silicon and magnesium, by depositing tungsten by an electron beam under heating in a vacuum. The base is heat treated in a hydrogen atmosphere at 800.degree. to 1,100.degree. C. An emissive material layer, containing an alkali earth metal oxide and 0.01 to 25 wt % of a rare earth metal oxide, the alkali earth metal oxide containing at least barium oxide, is formed on the metal layer. Thus, life characteristics of the cathode, especially during the operation at a high current density such as not less than 2A/cm.sub.2, are greatly enhanced.

75. 发明授权

US4831584A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4831584A
公开(公告)日：1989-05-16
申请号：US76215
申请日：1987-07-22
申请人： Youji Maruyama , Ryo Suzuki
发明人： Youji Maruyama , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.

76. 发明授权

US4377772A Discharge lamp and lighting equipment 失效
标题翻译：放电灯和照明设备
公开(公告)号：US4377772A
公开(公告)日：1983-03-22
申请号：US201914
申请日：1980-10-29
申请人： Michihiro Tsuchihashi , Ryo Suzuki , Keiji Watanabe , Masato Saito
发明人： Michihiro Tsuchihashi , Ryo Suzuki , Keiji Watanabe , Masato Saito
IPC分类号： H01J61/54 , H01J61/92 , H01J7/44
CPC分类号： H01J61/92 , H01J61/541
摘要： A discharge lamp comprises an arc tube for high pressure discharge and a discharge gap for discharging until restarting the arc tube. The discharge gap being electrically connected in parallel to the arc tube in an outer bulb. A normally opened temperature responsive switch means is connected in series to the discharge gap and a series of the discharge gap and the temperature responsive switch means is connected in parallel to the arc tube.
摘要翻译：放电灯包括用于高压放电的电弧管和用于放电的放电间隙，直到重新启动电弧管。放电间隙与外灯泡中的电弧管并联电连接。常开的温度响应开关装置与放电间隙串联连接，并且一系列放电间隙和温度响应开关装置与电弧管并联连接。

77. 发明授权

US4305137A Planar magnetic bubble device 失效
标题翻译：平面磁性气泡装置
公开(公告)号：US4305137A
公开(公告)日：1981-12-08
申请号：US35254
申请日：1979-05-02
申请人： Minoru Hiroshima , Ryo Suzuki
发明人： Minoru Hiroshima , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08 , H01F10/06
CPC分类号： H01F10/06 , G11C19/0883
摘要： The basic elements of a magnetic bubble device are laminated. A spacer conductor pattern layer is formed on the same plane as a control conductor pattern layer interposed between a magnetic film which forms and holds magnetic bubbles and a propagation circuit pattern layer adapted to control the magnetic bubbles so as to make substantially uniform the distance between the propagation path and the magnetic film.
摘要翻译：磁性气泡装置的基本元件被层压。间隔导体图案层形成在与形成并保持磁性气泡的磁性膜之间的控制导体图案层的同一平面上，以及适于控制磁性气泡的传播电路图案层，以使得基本均匀的距离传播路径和磁性膜。

78. 发明授权

US09989006B2 Fuel injection control device and fuel injection control method for internal combustion engine 有权
公开(公告)号：US09989006B2
公开(公告)日：2018-06-05
申请号：US14383240
申请日：2013-03-05
申请人： Ryo Suzuki , Takeshi Miyaura , Yoshiyasu Ito , Toyomori Tsuiki , Naoyuki Yamada
发明人： Ryo Suzuki , Takeshi Miyaura , Yoshiyasu Ito , Toyomori Tsuiki , Naoyuki Yamada
IPC分类号： F02D41/24 , F02D41/40 , F02D41/36
CPC分类号： F02D41/36 , F02D41/2467 , F02D41/40 , F02D2200/0602 , Y02T10/44
摘要： An electronic control unit detects a manner of fluctuation of a fuel pressure with injection of fuel by a fuel injection valve with the use of a fuel pressure sensor, and calculates a tendency of deviation of an actual fuel injection characteristic of the fuel injection valve with respect to a basic fuel injection characteristic on the basis of a result of comparison between a detected temporal waveform and a basic temporal waveform. The tendency of deviation is reflected at a predetermined reflection rate (R) at the time of updating a learned value (Gij) for compensating for an individual difference of the fuel injection valve. The predetermined reflection rate (R) is increased when an accumulated value (D) of a vehicle travel distance is shorter than a predetermined value (Dth) as compared with when the accumulated value (D) is longer than or equal to the predetermined value (Dth).

79. 发明授权

US08659022B2 Hybrid silicon wafer 有权
标题翻译：混合硅片
公开(公告)号：US08659022B2
公开(公告)日：2014-02-25
申请号：US13498992
申请日：2010-10-28
申请人： Ryo Suzuki , Hiroshi Takamura
发明人： Ryo Suzuki , Hiroshi Takamura
IPC分类号： H01L29/04
CPC分类号： C30B29/06 , C30B29/605 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/02667
摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.
摘要翻译：作为硅晶片的混合硅晶片，其具有通过单向凝固/熔融法制备的单晶硅嵌入到多晶硅中的结构。使用通过单向凝固/熔融法制备的多晶部分的晶粒的纵向平面用作晶片平面，并且嵌入单晶硅，使得多晶部分的晶粒的纵向方向形成120°的角度至150°相对于单晶硅的切割表面。因此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片。

80. 发明授权

US08647747B2 Hybrid silicon wafer and method of producing the same 有权
标题翻译：混合硅晶片及其制造方法
公开(公告)号：US08647747B2
公开(公告)日：2014-02-11
申请号：US12832150
申请日：2010-07-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： B32B3/02 , B32B9/04 , B32B13/04 , C01B33/02 , B29D7/00
CPC分类号： C30B33/06 , C01B32/05 , C30B11/00 , C30B29/06 , Y10T428/21
摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.
摘要翻译：提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体晶体部分。另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭硅和多晶硅，并从其中切出晶片形状。所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

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