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71. 发明授权

US4488306A Terraced substrate semiconductor laser 失效
标题翻译：梯形衬底半导体激光器
公开(公告)号：US4488306A
公开(公告)日：1984-12-11
申请号：US358104
申请日：1982-03-15
申请人： Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu , Hiroyuki Mizuno , Kazuo Fujimoto
发明人： Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu , Hiroyuki Mizuno , Kazuo Fujimoto
IPC分类号： H01L21/208 , H01S5/00 , H01S5/024 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2238 , H01S5/024 , H01S5/02272 , H01S5/3203
摘要： In a semiconductor laser of terraced substrate type, comprising on a terraced substrate (11) of n-GaAs substrate, a first clad layer (12) of n-GaAlAs, an active layer (13) of non-doped GaAlAs, a second clad layer (14) of p-GaAlAs and a current limiting layer (15) of n-GaAs, and further thereon a thick overriding layer (19) of n-GaAlAs with strip shaped opening (191), are epitaxially formed, and a current injection layer (16) is formed by Zn diffusion through the opening (191) in a manner one corner (161) of the injection front penetrate the current limiting layer (15) and reaches the second clad layer (14). By means of thick overriding layer (19), shortcircuiting between the active layer (13) and a p-side electrode (7) is prevented.
摘要翻译：在梯形衬底类型的半导体激光器中，包括在n-GaAs衬底的梯形衬底（11）上，n-GaAlAs的第一覆盖层（12），非掺杂GaAlAs的有源层（13），第二覆层 p-GaAlAs的层（14）和n-GaAs的限流层（15），并且还具有带条形开口（191）的n-GaAlAs厚的覆盖层（19），外延形成电流注入层（16）以注入前沿的一个角部（161）穿过开口（191）的Zn扩散形成，穿过限流层（15）并到达第二覆层（14）。通过厚覆盖层（19），防止有源层（13）和p侧电极（7）之间的短路。

72. 发明授权

US4377865A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4377865A
公开(公告)日：1983-03-22
申请号：US218442
申请日：1980-12-19
申请人： Takashi Sugino , Masaru Wada , Hirokazu Shimizu , Kunio Itoh
发明人： Takashi Sugino , Masaru Wada , Hirokazu Shimizu , Kunio Itoh
IPC分类号： H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2232 , H01S5/2059 , H01S5/2234 , H01S5/2235
摘要： On an n-type semiconductor substrate having a ridge part of stripe-shaped pattern, the following layers are formed by liquid phase sequential epitaxial growth: an undoped active layer; a p-type clad layer; and an n-type isolation layer. Thereafter, a Cd impurity is diffused in the isolation layer in a stripe-shaped pattern at the position above the ridge part, thereby forming a p+-type conduction region in the central part of the isolation layer. By forming the stripe-shaped ridge part on the substrate overriding the active layer, the injected current is effectively confined to the lasing region which is the thinner part of the active layer and is on the ridge part. Therefore the threshold current is decreased. Accordingly, the light lased in the active layer is effectively confined in a stripe-shaped lasing region thereof, and a stable transverse mode of lasing is obtainable.
摘要翻译：在具有条状图案的脊部的n型半导体衬底上，通过液相顺序外延生长形成以下层：未掺杂的有源层; p型覆层; 和n型隔离层。此后，Cd隔离层在脊部上方的位置以条状图案扩散到隔离层，由此在隔离层的中央部形成p +型导电区域。通过在衬底上形成条状脊部来覆盖有源层，注入的电流被有效地限制在作为有源层的较薄部分并且在脊部上的激光区域。因此，阈值电流降低。因此，在有源层中照射的光被有效地限制在条状的激光区域中，并且可以获得稳定的横模激光。

73. 发明授权

US4304670A Blood filter with air trap and distributing chamber 失效
标题翻译：血液过滤器带有空气阱和分配室
公开(公告)号：US4304670A
公开(公告)日：1981-12-08
申请号：US134427
申请日：1980-03-27
申请人： Masaharu Watanabe , Masaru Wada
发明人： Masaharu Watanabe , Masaru Wada
IPC分类号： A61M1/36 , B01D29/05 , B01D35/02
CPC分类号： A61M1/3627 , B01D29/05 , A61M2202/0413 , A61M2205/7545
摘要： A blood filter device has a housing including a frame, which is provided at opposite ends with an inlet and an outlet and extends in a plane containing a line connecting the inlet and outlet, and a pair of side plates extending on opposite sides of the frame and defining a filtering space together with the frame. The housing accommodates a filter support and a pair of flat filter elements disposed on opposite sides of the filter support such that each filter element defines together with the filter support a blood-exit space communicating with the outlet and also defines together with the associated side plate a blood-entering space communicating with the inlet. Between the filter support and inlet is provided a distributing and air trapping chamber communicating with the individual blood-entering spaces and defining a space to receive blood from the inlet to trap air contained in the blood and present in the filter device to prevent the air from reaching the filter elements. A distributing piece, which serves to distribute blood introduced through the inlet into the distributing chamber to the individual filtering blood spaces, extends from the filter support into the distributing chamber.
摘要翻译：血液过滤装置具有壳体，其包括框架，该框架在相对端设置有入口和出口，并且在包含连接入口和出口的线的平面中延伸，以及在框架的相对侧上延伸的一对侧板并且与帧一起定义过滤空间。壳体容纳过滤器支撑件和设置在过滤器支撑件的相对侧上的一对扁平过滤器元件，使得每个过滤元件与过滤器一起限定出与出口连通的血液出口空间，并且还与相关联的侧板与入口连通的血液进入空间。在过滤器支撑件和入口之间设置有分配和空气捕获室，其与各个血液进入空间连通并且限定用于从入口接收血液的空间，以捕获包含在血液中并存在于过滤装置中的空气，以防止空气到达过滤元件。用于将通过入口引入的血液分配到分配室中的分配件到单独的过滤血液空间，从过滤器支撑件延伸到分配室中。

74. 发明授权

US08114649B2 L-cysteine producing microorganism and a method for producing L-cysteine 有权
标题翻译： L-半胱氨酸生产微生物和L-半胱氨酸的生产方法
公开(公告)号：US08114649B2
公开(公告)日：2012-02-14
申请号：US12635404
申请日：2009-12-10
申请人： Hiroshi Takagi , Shigeru Nakamori , Masaru Wada , Hirotada Mori
发明人： Hiroshi Takagi , Shigeru Nakamori , Masaru Wada , Hirotada Mori
IPC分类号： C12N9/00 , C12N9/10 , C12P13/12 , C12N1/20
CPC分类号： C12P13/12
摘要： L-cysteine is produced by culturing an Escherichia bacterium having L-cysteine producing ability and containing a gene encoding an O-acetylserine sulphydrylase B or MalY regulatory protein that is modified so that cysteine desulfhydrase activity is reduced or eliminated. The bacterium is cultured in a medium to produce and cause accumulation of L-cysteine in the medium, and collecting L-cysteine from the medium.
摘要翻译：通过培养具有L-半胱氨酸生产能力的埃希氏菌属细菌并含有编码O-乙酰丝氨酸巯基酶B或MalY调节蛋白的基因来产生L-半胱氨酸，所述基因被修饰以使得半胱氨酸脱硫酸酶活性被降低或消除。将细菌培养在培养基中以产生并引起培养基中L-半胱氨酸的积累，并从培养基中收集L-半胱氨酸。

75. 发明授权

US07645852B2 Aliphatic polyester copolymer 失效
标题翻译：脂肪族聚酯共聚物
公开(公告)号：US07645852B2
公开(公告)日：2010-01-12
申请号：US11597931
申请日：2005-05-25
申请人： Yuji Terado , Masaru Wada , Tatsuhiro Urakami
发明人： Yuji Terado , Masaru Wada , Tatsuhiro Urakami
IPC分类号： C08G63/00 , C08G63/02
CPC分类号： C08G63/64
摘要： An aliphatic polyester copolymer comprising an aliphatic carbonate unit (a) and an aliphatic polyester unit (b), and a molded body composed of said aliphatic polyester copolymer. The aliphatic polyester copolymer is excellent in heat resistance while having adequate mechanical properties and properties in the molten state.
摘要翻译：包含脂族碳酸酯单元（a）和脂族聚酯单元（b）的脂肪族聚酯共聚物和由所述脂族聚酯共聚物组成的成型体。脂肪族聚酯共聚物在熔融状态下具有良好的机械性能和性能，耐热性优异。

76. 发明授权

US07148047B2 L-cysteine producing bacterium and method for producing L-cysteine 失效
公开(公告)号：US07148047B2
公开(公告)日：2006-12-12
申请号：US10060218
申请日：2002-02-01
申请人： Hiroshi Takagi , Masaru Wada , Shigeru Nakamori
发明人： Hiroshi Takagi , Masaru Wada , Shigeru Nakamori
IPC分类号： C12N9/10 , C12N1/12 , C12P13/12 , C07K1/00 , C07H21/02
CPC分类号： C12P13/12
摘要： L-cysteine is produced by culturing a coryneform bacterium in which intracellular serine acetyltransferase activity is increased by transformation with a gene coding for serine acetyltransferase, such modification of an expression control sequence of a gene coding for serine acetyltransferase that expression of the gene in a cell should be enhanced and for forth, preferably in which L-cysteine decomposition system is further suppressed, in a medium to produce and accumulate L-cysteine in culture and collecting the L-cysteine from the culture.

77. 发明申请

US20060024860A1 Semiconductor apparatus and process for fabricating the same 失效
公开(公告)号：US20060024860A1
公开(公告)日：2006-02-02
申请号：US11241177
申请日：2005-09-30
申请人： Masaru Wada , Shinichiro Kondo , Ryouichi Yasuda
发明人： Masaru Wada , Shinichiro Kondo , Ryouichi Yasuda
IPC分类号： H01L51/40 , H01L21/84 , H01L21/00
CPC分类号： H01L51/0566 , B82Y10/00 , H01L51/0012 , H01L51/005 , H01L51/0068 , H01L51/0075 , H01L51/0094 , H01L51/0095 , H01L51/0541 , H01L51/0545 , H01L51/0595 , Y10S977/89 , Y10S977/936 , Y10S977/938
摘要： A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor or a semiconductor and organic semiconductor molecules, are alternately bonded through a functional group at both terminals of the organic semiconductor molecules to form a conducting path in a network form such that the conducting path in the fine particles and the conducting path in the organic semiconductor molecules are two-dimensionally or three-dimensionally linked together. This conducting path includes no intermolecular electron transfer, and the mobility is not restricted by the intermolecular electron transfer, and therefore the mobility of the conducting path along the main chain in the organic semiconductor molecules (in the direction of the axis of the molecule), for example, displays a high intramolecular mobility due to delocalized π electrons can be fully utilized.

78. 发明授权

US06946268B2 L-cysteine producing bacterium and method for producing L-cysteine 有权
标题翻译： L-半胱氨酸生产细菌和L-半胱氨酸的制备方法
公开(公告)号：US06946268B2
公开(公告)日：2005-09-20
申请号：US10254763
申请日：2002-09-26
申请人： Hiroshi Takagi , Masaru Wada , Shigeru Nakamori
发明人： Hiroshi Takagi , Masaru Wada , Shigeru Nakamori
IPC分类号： C12N1/21 , C12P13/12 , C12R1/19 , C07H21/04 , C12N1/20 , C12N9/10 , C12N15/00
CPC分类号： C12R1/19 , C12N9/88 , C12P13/12
摘要： L-Cysteine is produced by culturing a bacterium belonging to the genus Escherichia having an L-cysteine producing ability and modified so that cystathionine-β-lyase activity or cystathionine-β-lyase activity and tryptophanase activity should be reduced or eliminated in a medium to produce and accumulate L-cysteine in the medium and collecting the L-cysteine from the medium.
摘要翻译：通过培养具有L-半胱氨酸生产能力的埃希氏杆菌属细菌产生L-半胱氨酸，并进行修饰，以使得在培养基中减少或消除胱硫醚-β-裂解酶活性和色氨酸酶活性在培养基中产生并积累L-半胱氨酸，并从培养基中收集L-半胱氨酸。

79. 发明授权

US06664425B2 Process for producing 1,3-bis(3-aminophenoxy)benzene 有权
标题翻译： 1,3-双（3-氨基苯氧基）苯的制备方法
公开(公告)号：US06664425B2
公开(公告)日：2003-12-16
申请号：US10220708
申请日：2002-09-05
申请人： Naoki Tomoshige , Yasuhiro Nukii , Masaru Wada , Koju Okazaki , Hidetoshi Hayashi
发明人： Naoki Tomoshige , Yasuhiro Nukii , Masaru Wada , Koju Okazaki , Hidetoshi Hayashi
IPC分类号： C07C21300
CPC分类号： C07C213/06 , C07C217/90
摘要： 1,3-Bis(3-aminophenoxy)benzene effective, for example, as a raw material for highly heat-resistant polyimide is produced industrially at a high yield by a reaction between 1,3-difluorobenzene and an alkali metal salt of 3-aminophenol.
摘要翻译：作为高耐热性聚酰亚胺的原料有效的1,3-双（3-氨基苯氧基）苯通过1,3-二氟苯与3-金属盐的碱金属盐的反应，以高产率工业生产，氨基苯酚。

80. 发明授权

US5982036A Multi-layered structure for ohmic electrode fabrication 失效
标题翻译：用于欧姆电极制造的多层结构
公开(公告)号：US5982036A
公开(公告)日：1999-11-09
申请号：US979413
申请日：1997-11-26
申请人： Chihiro Uchibori , Masanori Murakami , Akira Otsuki , Takeo Oku , Masaru Wada
发明人： Chihiro Uchibori , Masanori Murakami , Akira Otsuki , Takeo Oku , Masaru Wada
IPC分类号： H01L21/28 , H01L21/203 , H01L21/265 , H01L21/285 , H01L21/337 , H01L21/338 , H01L29/08 , H01L29/45 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/66924 , H01L21/28575 , H01L21/28581 , H01L29/0891 , H01L29/452 , H01L29/66878
摘要： An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.
摘要翻译：公开了具有实际令人满意的特性的诸如GaAs半导体的III-V族化合物半导体的欧姆电极。通过溅射等将非单晶InAs层，Ni膜，WSi膜和W膜依次沉积在n +型GaAs衬底上，随后通过剥离等进行图案化，以制造用于制造的多层结构欧姆电极。然后首先将结构退火，例如。 300℃，30分钟，然后在例如 650℃下制造欧姆电极1秒钟。

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