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    • 73. 发明申请
    • MASSAGE DEVICE
    • 按摩装置
    • US20120095376A1
    • 2012-04-19
    • US13255773
    • 2010-08-23
    • Tetsuya IshikawaShigeki NodaShinsaku Shimizu
    • Tetsuya IshikawaShigeki NodaShinsaku Shimizu
    • A61H7/00
    • A61H15/0078A61H2015/0014A61H2201/1669A61H2201/1676A61H2205/106A61H2205/12
    • There is provided a massage device capable of producing innovative and comfortable massage effect by massaging a target body part over a wide area in its lengthwise direction with substantially rectilinear motion of a pressure-applying point. The massage device 1 comprises a pair of treatment members 23, 24 arranged face-to-face with each other at a spacing large enough for insertion of part of human body; a holding mechanism 162 for holding and pressing the body part in sandwich style by moving at least one of the paired treatment members or both of them 23, 24 in the direction of width of the body part set in place between the paired treatment members; and a moving mechanism 26 for moving the treatment member 23, 24 in the direction of length of the body part while maintaining the holding condition of the treatment member 23, 24 effected by the holding mechanism 162.
    • 本发明提供一种能够通过按压施加点的大致直线运动沿长度方向在广泛的区域上按摩目标体部而产生创新舒适的按摩效果的按摩装置。 按摩装置1包括以足够大的间隔彼此面对面地布置的一对处理构件23,24,以便插入人体的一部分; 保持机构162,用于通过使成对处理部件或其中的两个处理部件23,24中的至少一个沿设置在配对处理部件之间的身体部位的宽度方向移动来夹持和按压夹层型主体部; 以及移动机构26,用于在保持由保持机构162实现的处理构件23,24的保持状态的同时,使主体部分的长度方向上移动处理构件23,24。
    • 76. 发明申请
    • INKJET PRINTING APPARATUS
    • 喷墨打印设备
    • US20120050423A1
    • 2012-03-01
    • US13218626
    • 2011-08-26
    • Tetsuya Ishikawa
    • Tetsuya Ishikawa
    • B41J2/175
    • B41J2/17509B41J2/175B41J2/17513B41J2/1752B41J2/17523B41J2/17553B41J2/17596
    • An inkjet printing apparatus comprises an ink tank including an ink accommodating unit, an ink leading-out mechanism for leading out the ink in the ink accommodating unit to an outside, and a housing, and an ink tank holder for removably retaining the ink tank, wherein a space is formed between the ink leading-out mechanism and the housing, and when the ink tank is mounted to the ink tank holder, an ink flow passage is formed by contact of an outer periphery of an ink leading-out needle in the ink tank holder with a sealing member in the ink leading-out mechanism, further comprising restriction means for restricting a position of the ink tank to the ink tank holder such that when removing the ink tank from the ink tank holder, the ink tank stops in a state where a tip end of the ink leading-out needle is in the space.
    • 一种喷墨打印设备包括一个墨盒,包括墨水容纳单元,用于将墨水容纳单元中的墨水引导到外部的墨水引出机构和外壳以及用于可拆卸地保持墨水盒的墨水盒保持器, 其中在所述墨水引出机构和所述壳体之间形成空间,并且当所述墨水罐安装到所述墨水盒保持器时,墨水流动通道通过所述墨水引出针的外周部 在墨水引出机构中具有密封构件的墨水盒保持器还包括限制装置,用于将墨水罐的位置限制到墨水盒保持器,使得当从墨水盒保持器移除墨水盒时,墨水罐停止 墨水引出针的前端位于空间中的状态。
    • 80. 发明申请
    • METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE
    • 在HVPE中形成原位前置GaN沉积层的方法
    • US20100279020A1
    • 2010-11-04
    • US12770306
    • 2010-04-29
    • Yuriy MelnikHidehiro KojiriOlga KrylioukTetsuya Ishikawa
    • Yuriy MelnikHidehiro KojiriOlga KrylioukTetsuya Ishikawa
    • B05D1/36
    • C23C16/4488C23C16/303C23C16/45523C30B25/02C30B29/403
    • A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
    • 提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。 元素卤素气体,卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。 可以是过渡层的缓冲层可以结合多于一个III族金属,并且可以以无定形或结晶形态沉积。 非晶层可以通过热处理部分或完全重结晶。 代替层,可以形成多个离散的成核位点,其尺寸,密度和分布可以被控制。 氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。 缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。