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71. 发明申请

US20070048945A1 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US20070048945A1
公开(公告)日：2007-03-01
申请号：US11495927
申请日：2006-07-28
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L21/336
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

72. 发明申请

US20060233019A1 Reading phase change memories without triggering reset cell threshold devices 有权
标题翻译：读取相位改变存储器，而不触发复位单元阈值器件
公开(公告)号：US20060233019A1
公开(公告)日：2006-10-19
申请号：US11105829
申请日：2005-04-14
申请人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj , Ward Parkinson
发明人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj , Ward Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0033 , G11C2013/0054
摘要： A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
摘要翻译：可以读取相变存储器，以便减少读取干扰的可能性。例如，当复位装置升高到电压时，可能会发生读取干扰，导致其阈值装置触发。阈值装置的触发产生位移电流，其可以将复位装置转换成集装置。通过确保复位单元不会达到会导致阈值器件触发的电压，可能会降低读取干扰。

73. 发明申请

US20060151849A1 Phase change memory that switches between crystalline phases 有权
标题翻译：在晶相之间切换的相变存储器
公开(公告)号：US20060151849A1
公开(公告)日：2006-07-13
申请号：US11032345
申请日：2005-01-10
申请人： Wolodymyr Czubatyj
发明人： Wolodymyr Czubatyj
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： H01L45/065 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/144
摘要： A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift than the amorphous state conventionally utilized in phase change memories.
摘要翻译：相变存储器可以在两个结晶态之间转变。在一个实施方案中，相变材料是在面心立方和六边形状态之间转变的硫族化物。因为这些状态更稳定，所以它们比相变存储器中常规使用的非晶状态更不容易漂移。

74. 发明授权

US4882295A Method of making a double injection field effect transistor 失效
标题翻译：制造双注入场效应晶体管的方法
公开(公告)号：US4882295A
公开(公告)日：1989-11-21
申请号：US328666
申请日：1989-03-27
申请人： Wolodymyr Czubatyj , Michael G. Hack , Michael Shur
发明人： Wolodymyr Czubatyj , Michael G. Hack , Michael Shur
IPC分类号： H01L27/092 , H01L29/739 , H01L29/772 , H01L29/812 , H01L33/00 , H01L33/18 , H01S5/042 , H01S5/062 , H01S5/30
CPC分类号： H01L33/18 , H01L27/0928 , H01L29/739 , H01L29/7722 , H01L29/8122 , H01L33/0041 , H01S5/0422 , H01S5/30 , H01S5/06203 , Y10S148/105
摘要： Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap.Embodiments having electrodes with doped microcrystalline regions for improved carrier injection are disclosed. Methods for making planar double injection field effect transistors having a plurality of deposited noncrystalline semiconductor layers for clean interface formation between semiconductor layers are also disclosed.
摘要翻译：可以水平或垂直布置的双注入场效应晶体管每个包括在两个载流电极之间延伸并在其间形成电流路径的半导体材料体。每个半导体本体可以是基本上固有的或轻掺杂的。位于每个电流路径附近的一个或多个控制电极或门在双极路径上投射可变电场，该双极路径通过控制注入到半导体主体中的两极性的电荷载流子的量来调制电流。在大多数单栅极实施例中，电极延伸穿过一部分，优选地主要部分，例如75％或90％，或电流路径的长度，但不延伸到当前路径的整个长度。具有多个栅极的实施例通常具有两个绝缘栅极，一个从阳极电极延伸，另一个从阴极延伸。单个设备中的门可能重叠。公开了具有用于改进载流子注入的具有掺杂微晶区域的电极的实施例。还公开了用于制造具有用于半导体层之间的清洁界面形成的多个沉积的非晶半导体层的平面双注入场效应晶体管的方法。

75. 发明授权

US4782340A Electronic arrays having thin film line drivers 失效
标题翻译：具有薄膜线驱动器的电子阵列
公开(公告)号：US4782340A
公开(公告)日：1988-11-01
申请号：US899442
申请日：1986-08-22
申请人： Wolodymyr Czubatyj , Roger W. Pryor
发明人： Wolodymyr Czubatyj , Roger W. Pryor
IPC分类号： G11C11/407 , G11C8/08 , H01L21/8229 , H01L27/10 , H01L27/102 , H03K5/02 , H03K19/0175 , G09G3/34
CPC分类号： G11C8/08 , H01L27/10 , H03K19/017545 , H03K5/023 , G11C2211/5614
摘要： Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures. An electronic memory array having a plurality of vertically arranged cells, with each cell provided with a thin film isolation diode and a thin film memory element, is also disclosed.
摘要翻译：公开了包括薄膜线路驱动电路和地址解码电路的完全集成的薄膜电子阵列。每个线路驱动器采用具有负电阻特性的类型的双端子薄膜阈值开关器件，用于非常高速，高电流操作。当驱动具有大容性负载或电流要求的阵列中的地址线或其他开关导体时，线路驱动器特别有用。地址解码电路由配置为多个AND逻辑门的薄膜二极管阵列构成，每个与门的输出提供触发信号以接通与特定地址线相关联的线路驱动电路。用于实现完全集成阵列的薄膜结构包括二极管和阈值开关，其布置为多层台面结构形式的高密度垂直器件。还公开了具有多个垂直排列的单元的电子存储器阵列，每个单元设置有薄膜隔离二极管和薄膜存储元件。

76. 发明授权

US4419533A Photovoltaic device having incident radiation directing means for total internal reflection 失效
标题翻译：具有用于全内反射的入射辐射导向装置的光伏装置
公开(公告)号：US4419533A
公开(公告)日：1983-12-06
申请号：US354285
申请日：1982-03-03
申请人： Wolodymyr Czubatyj , Rajendra Singh , Joachim Doehler , David D. Allred , Jaime M. Reyes
发明人： Wolodymyr Czubatyj , Rajendra Singh , Joachim Doehler , David D. Allred , Jaime M. Reyes
IPC分类号： H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/202 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.
摘要翻译：公开了新的和改进的光伏器件，其提供比以前从现有器件获得的更高的短路电流和效率。所公开的装置包括入射辐射导向装置，用于将入射光的至少一部分引导通过其有效区域或其区域，其角度足以基本上限制装置中的定向辐射。这样可以大幅度地利用光生电子 - 空穴对。此外，由于光以这样的角度被引导通过有源区域或者区域，所以可以使有源区域更薄以增加收集效率。入射辐射导向器可以是随机表面或体反射器，以提供光的随机散射，或周期性表面或体反射器以提供光的选择性散射。尽管本发明可应用于由任何类型的半导体材料形成的光电器件，例如晶体，多晶或非晶半导体合金或其任何组合，但是本文的公开内容主要涉及由非晶硅合金形成的光伏器件，优选掺入氟作为减少元素的状态密度。本公开还涉及但不限于p-i-n配置的光伏器件，既作为串联排列的单个单元和多个单元。

77. 发明授权

US08796101B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08796101B2
公开(公告)日：2014-08-05
申请号：US13590085
申请日：2012-08-20
申请人： Wolodymyr Czubatyj , Regino Sandoval
发明人： Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L21/8239
CPC分类号： H01L45/122 , H01L45/06 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
摘要翻译：相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极交换材料当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。

78. 发明授权

US08685291B2 Variable resistance materials with superior data retention characteristics 有权
标题翻译：具有优异数据保留特性的可变电阻材料
公开(公告)号：US08685291B2
公开(公告)日：2014-04-01
申请号：US12775078
申请日：2010-05-06
申请人： Carl Schell , Wolodymyr Czubatyj
发明人： Carl Schell , Wolodymyr Czubatyj
IPC分类号： H01B1/02 , H01B1/06 , H01L21/06
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.
摘要翻译：可变电阻记忆组合物和在升高的温度下表现出优异的数据保留特性的装置。组合物是包含可变电阻组分和惰性组分的复合材料。可变电阻部件可以包括相变材料，并且惰性部件可以包括电介质材料。相变材料可以包括Ge，Sb和Te，其中Sb的原子浓度在3％和16％之间，和/或Sb / Ge比在0.07和0.68之间和/或Ge / Te比在 0.6和1.1和/或介电成分的浓度（以其构成元素的原子浓度之和表示）在5％至50％之间。该组合物在高温下表现出十年以上的数据保存温度和较长的数据保留时间。

79. 发明授权

US08581223B2 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US08581223B2
公开(公告)日：2013-11-12
申请号：US13039952
申请日：2011-03-03
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

80. 发明授权

US08350661B2 Breakdown layer via lateral diffusion 有权
标题翻译：击穿层通过横向扩散
公开(公告)号：US08350661B2
公开(公告)日：2013-01-08
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/13
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

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