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71. 发明授权

US06991975B1 Laser process 失效
标题翻译：激光工艺
公开(公告)号：US06991975B1
公开(公告)日：2006-01-31
申请号：US09197534
申请日：1998-11-23
申请人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
发明人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
IPC分类号： H01L21/00
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2022 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L21/84 , H01L27/1285
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10N≦−0.02 (E−350), where N is the number of shots of the pulsed laser beam.
摘要翻译：一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加密度E（mJ / cm 2），条件是其满足关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> log 10 < /SUB>N<=-0.02（E-350），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N是脉冲激光束的镜头数。

72. 发明授权

US06960812B2 Method of forming an oxide film 失效
标题翻译：形成氧化膜的方法
公开(公告)号：US06960812B2
公开(公告)日：2005-11-01
申请号：US10459430
申请日：2003-06-12
申请人： Shunpei Yamazaki , Hongyong Zhang
发明人： Shunpei Yamazaki , Hongyong Zhang
IPC分类号： C23C14/10 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336 , H01L29/76
CPC分类号： H01L21/02164 , C23C14/10 , H01L21/02131 , H01L21/02211 , H01L21/02266 , H01L21/02274 , H01L21/28158 , H01L21/31612 , H01L21/31629 , H01L29/4908 , H01L29/66757
摘要： A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.
摘要翻译：公开了一种形成氧化膜的方法和利用该氧化膜制造电子器件的方法。通过溅射在衬底上形成氧化硅膜。因此，在低温下进行成膜。溅射气氛包括氧化气体和惰性气体如氩气。为了防止在膜中产生固定电荷并获得具有良好性能的氧化膜，将氩的比例调节到20％以下。或者，将含有卤素元素如氟的气体以小于20％的比例加入到上述溅射气氛中。因此，氧化膜中的硅的碱离子和悬挂键被卤素元素中和，得到细小的氧化膜。

73. 发明授权

US06803600B2 Insulated gate field effect semiconductor devices and method of manufacturing the same 失效
标题翻译：绝缘栅场效应半导体器件及其制造方法
公开(公告)号：US06803600B2
公开(公告)日：2004-10-12
申请号：US09983523
申请日：2001-10-24
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L2904
CPC分类号： H01L27/127 , G02F1/13454 , G02F2001/136245 , H01L21/76897 , H01L27/1214 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675
摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
摘要翻译：制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。然后对栅电极进行阳极氧化，形成包围电极的氧化膜。以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

74. 发明授权

US06610142B1 Process for fabricating semiconductor and process for fabricating semiconductor device 失效
标题翻译：用于制造半导体的工艺和用于制造半导体器件的工艺
公开(公告)号：US06610142B1
公开(公告)日：2003-08-26
申请号：US08977944
申请日：1997-11-24
申请人： Toru Takayama , Hongyong Zhang , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Toru Takayama , Hongyong Zhang , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： C30B1322
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78654 , H01L29/78675
摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400 to 650° C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.
摘要翻译：一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度范围内或在不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。还公开了使用其制造薄膜晶体管的工艺。

75. 发明授权

US06448577B1 Semiconductor device with grain boundaries 失效
标题翻译：具有晶界的半导体器件
公开(公告)号：US06448577B1
公开(公告)日：2002-09-10
申请号：US09037984
申请日：1998-03-11
申请人： Shunpei Yamazaki , Hongyong Zhang
发明人： Shunpei Yamazaki , Hongyong Zhang
IPC分类号： H01L2900
CPC分类号： H01L29/78675
摘要： A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 Å to 4 &mgr;m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7×1019 atoms.cm−3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7×1019 atoms.cm−3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5×1018 atoms.cm−3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450° C. to 700° C.
摘要翻译：公开了一种包括至少具有微晶结构的半导体膜的高质量半导体器件，其中所述半导体膜在其中具有晶格畸变，并且包含从所述半导体的上表面观察的平均直径为30至4μm的晶粒并且在所述半导体膜的内部位置含有氧杂质，所述氧杂质的浓度不高于7×1019原子/ cm 3。还公开了一种用于制造上述半导体器件的方法，其包括以不高于5×1018的浓度从含有氧杂质的半导体靶溅射沉积含有浓度不高于7×1019原子/ cm 3的氧杂质的非晶半导体膜在包含不低于分压10％的氢的气氛中的原子cm -3; 并在450℃至700℃的温度下使所述非晶半导体膜结晶。

76. 发明授权

US06423586B1 Method for crystallizing semiconductor material without exposing it to air 失效
标题翻译：使半导体材料结晶而不暴露于空气的方法
公开(公告)号：US06423586B1
公开(公告)日：2002-07-23
申请号：US09038926
申请日：1998-03-09
申请人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
IPC分类号： H01L21336
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译：一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子/ cm 3以下，优选1×1019原子的浓度熔化含有碳，氮和氧的非晶半导体膜 cm-3以下，通过将激光等离子体的激光或高强度光照射到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

77. 发明授权

US06288764B1 Display device or electronic device having liquid crystal display panel 失效
标题翻译：具有液晶显示面板的显示装置或电子装置
公开(公告)号：US06288764B1
公开(公告)日：2001-09-11
申请号：US08879583
申请日：1997-06-20
申请人： Hongyong Zhang , Shunpei Yamazaki , Satoshi Teramoto , Yoshiharu Hirakata
发明人： Hongyong Zhang , Shunpei Yamazaki , Satoshi Teramoto , Yoshiharu Hirakata
IPC分类号： G02F1136
CPC分类号： G02F1/1339 , G02F1/1345 , G02F1/13454 , G02F1/136277 , G09G3/3648 , G09G2320/0252
摘要： A configuration is provided in which a sealing material 104 is provided on a peripheral driving circuit. With this configuration, layers 240 and 237 made of a resin material are provided under the sealing material 104. This makes it possible to moderate the application of a local stress to the peripheral driving circuit due to the presence of a filler 103 included in the sealing material 104. Thus, breakage of the peripheral driving circuit can be avoided.
摘要翻译：提供了一种在外围驱动电路上设置密封材料104的构造。利用这种构造，在密封材料104的下方设置有由树脂材料制成的层240和237.这使得可以通过包含在密封件中的填料103的存在来调节对外围驱动电路施加的局部应力材料104.因此，可以避免外围驱动电路的损坏。

78. 发明授权

US6013928A Semiconductor device having interlayer insulating film and method for forming the same 失效
标题翻译：具有层间绝缘膜的半导体装置及其制造方法
公开(公告)号：US6013928A
公开(公告)日：2000-01-11
申请号：US479393
申请日：1995-06-07
申请人： Shunpei Yamazaki , Akira Mase , Masaaki Hiroki , Yasuhiko Takemura , Hongyong Zhang , Hideki Uochi , Hideki Nemoto
发明人： Shunpei Yamazaki , Akira Mase , Masaaki Hiroki , Yasuhiko Takemura , Hongyong Zhang , Hideki Uochi , Hideki Nemoto
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H04N3/12 , H01L27/01 , H01L31/0392 , H01L29/04
CPC分类号： H04N3/127 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78618 , G02F1/1368 , G02F2001/136245 , G09G2300/0823
摘要： An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.
摘要翻译：一种适用于有源矩阵液晶显示器的绝缘栅场效应晶体管。沟道长度或源极区域和漏极区域之间的距离大于沿着沟道的纵向方向取得的栅电极的长度。偏移区域形成在源极和漏极区域的侧面上的沟道区域中。没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

79. 发明授权

US5985741A Semiconductor device and method of fabricating the same 失效
公开(公告)号：US5985741A
公开(公告)日：1999-11-16
申请号：US821656
申请日：1997-03-20
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L29/66757 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/78654 , H01L29/78675 , H01L21/2022
摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.

80. 发明授权

US5972742A Method of making thin film transistor with anodic oxidation 失效
标题翻译：制造具有阳极氧化的薄膜晶体管的方法
公开(公告)号：US5972742A
公开(公告)日：1999-10-26
申请号：US885872
申请日：1997-06-30
申请人： Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Itaru Koyama , Shunpei Yamazaki
发明人： Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Itaru Koyama , Shunpei Yamazaki
IPC分类号： H01L21/28 , H01L21/8234 , H01L21/84
CPC分类号： H01L21/823475 , H01L21/28079 , H01L21/84 , Y10S438/911
摘要： An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.
摘要翻译：描述了形成绝缘栅场效应晶体管的改进方法。根据该方法，栅电极由诸如铝的金属以及电连接栅电极的布线形成。通过将栅电极作为阳极浸渍在电解质中以形成覆盖它们的金属的氧化物来阳极氧化。由于在阳极氧化之前用合适的有机膜覆盖连接布线，所以不会在其上形成氧化铝，从而通过通常的蚀刻容易地去除连接布线。

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