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    • 71. 发明授权
    • Image capturing apparatus for palm authentication
    • 用于掌纹认证的图像捕获设备
    • US07580552B2
    • 2009-08-25
    • US11063611
    • 2005-02-24
    • Yoshio YoshizuKazumi ToneHiroyuki Tanaka
    • Yoshio YoshizuKazumi ToneHiroyuki Tanaka
    • G06K9/00
    • G06K9/00G06K9/00885G06K2009/00932
    • An image capturing apparatus for palm authentication captures images of a palm for use in palm authentication. In order to correctly guide the palm of a user into an image capturing region, on one side of a non-contact sensor unit for image capturing the palm, a front face guide is provided for supporting a wrist having a hand to be captured by the non-contact sensor unit. When the palm is to be captured for palm authentication, the front face guide enables guiding the palm naturally to an image capturing region of the sensor unit. Because the front face guide supports the wrist, the palm can correctly be positioned within an image capturing region of the sensor unit.
    • 用于手掌认证的图像捕获装置捕获用于手掌认证的手掌的图像。 为了将用户的手掌正确地引导到图像捕获区域中,在用于图像捕获手掌的非接触式传感器单元的一侧上,设置有前表面导板,用于支撑具有被捕获的手的手腕 非接触传感器单元。 当手掌被捕获用于掌纹认证时,前面引导件能够将手掌自然地引导到传感器单元的图像捕获区域。 因为前面导向器支撑手腕,手掌可以正确地定位在传感器单元的图像捕获区域内。
    • 72. 发明授权
    • Surface acoustic wave device and communication device
    • 声表面波装置及通讯装置
    • US07579928B2
    • 2009-08-25
    • US11729953
    • 2007-03-30
    • Kazuhiro OtsukaTsuyoshi NakaiHiroyuki Tanaka
    • Kazuhiro OtsukaTsuyoshi NakaiHiroyuki Tanaka
    • H03H9/72H03H9/64
    • H03H9/0047H03H9/0057
    • A surface acoustic wave device includes front stage and rear stage surface acoustic wave elements, a signal wiring connecting between the front stage and rear stage surface acoustic wave elements, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A surface acoustic wave device includes a front stage surface acoustic wave resonator, a rear stage surface acoustic wave element, a signal wiring connecting between the front stage surface acoustic wave resonator and the rear stage surface acoustic wave element, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A communication device includes the surface acoustic wave device described above, a receiver circuit or a transmitter circuit.
    • 表面声波装置包括前级和后级表面声波元件,连接在前级和后级声表面波元件之间的信号线,与后级声表面波元件连接的参考电位线和由 介于信号布线和参考电位布线之间的绝缘体。 表面声波装置包括前级表面声波谐振器,后级声表面波元件,连接在前级声表面波谐振器和后级表面声波元件之间的信号线,与 后级表面声波元件和由绝缘体制成的电容器,其插入在信号布线和参考电位布线之间。 通信装置包括上述表面声波装置,接收器电路或发送器电路。
    • 73. 发明授权
    • Swing arm support structure in a motorcycle, and motorcycle incorporating same
    • 摩托车中的摆臂支撑结构,以及结合相同的摩托车
    • US07527119B2
    • 2009-05-05
    • US11296862
    • 2005-12-07
    • Chikashi IizukaHiroyuki Tanaka
    • Chikashi IizukaHiroyuki Tanaka
    • B62M7/00
    • B62K25/28B62K25/20
    • A swing arm support structure is provided in a motorcycle, in which first and second support arm portions are provided on a front portion of a swing arm. The support arm portions are pivotally supported by a power unit through first and second pivot shafts, so that rigidity and strength of the paired support arm portions is ensured. A flange is formed on the first pivot shaft, which extends at least partially up to an outer edge of a power unit case and projects radially outwardly from an end portion of the first pivot shaft adjacent the case. The flange portion is removably attached to the case. An outer end of an output shaft extends through and is supported by the first pivot shaft, and this outer end projects outwards of the first support arm portion. A drive gear is fixed to the outer end portion of the output shaft.
    • 在摩托车中设置有摆臂支撑结构,其中第一和第二支撑臂部分设置在摆臂的前部。 支撑臂部分通过第一和第二枢转轴由动力单元枢转地支撑,从而确保了一对支撑臂部分的刚度和强度。 凸缘形成在第一枢转轴上,该凸缘至少部分地延伸到动力单元壳体的外边缘并且从邻近壳体的第一枢轴的端部径向向外突出。 凸缘部分可拆卸地附接到壳体。 输出轴的外端延伸穿过第一枢轴并被第一枢轴支撑,该外端部突出到第一支撑臂部分的外侧。 驱动齿轮固定在输出轴的外端部。
    • 74. 发明申请
    • VACUUM SYSTEM AND METHOD FOR OPERATING THE SAME
    • 真空系统及其操作方法
    • US20090112370A1
    • 2009-04-30
    • US11996326
    • 2006-07-14
    • Hiroyuki TanakaKiyoshi Ando
    • Hiroyuki TanakaKiyoshi Ando
    • G05D7/06
    • F04D19/046F04B37/14F04D27/00
    • The present invention provides a vacuum system including a vacuum pump capable of operating at a rotation rate controlled appropriately when a predetermined process is performed in a vacuum chamber, which contributes to energy conservation. The vacuum system serves as a semiconductor manufacturing system comprising a vacuum pump controller which has a gas flow mode and an auto-tuning mode for determining a rotation rate of a vacuum pump unit to set the rotation rate to a target value lower by a predetermined value than the full operation rate of gas flow rate control means under the condition that pressure within the process chamber is vacuum pressure necessary for the gas flow mode. The vacuum pump controller has means for reducing the rotation rate of the vacuum pump unit from a rated rotation rate in the auto-tuning mode under the condition that pressure within the process chamber is vacuum necessary for the gas flow mode, to determine whether or not the operation rate of an APC valve reaches a target value, and means for storing, as the rotation rate necessary for the gas flow mode, the rotation rate of the vacuum pump unit, which is obtained when it is determined that the operation rate of the APC valve reaches the target value.
    • 本发明提供了一种真空系统,其包括真空泵,该真空泵能够在真空室中进行预定的处理时适当地控制旋转速度,这有助于节能。 真空系统用作半导体制造系统,其包括具有气体流动模式和自动调谐模式的真空泵控制器,该自动调谐模式用于确定真空泵单元的转速以将转速设定为目标值低预定值 比在处理室内的压力为气体流动模式所需的真空压力的条件下的气体流量控制装置的全部操作速率。 真空泵控制器具有用于在自动调谐模式下在额定转速下降低真空泵单元的旋转速度的装置,在处理室内的压力为气体流动模式需要真空的条件下,确定是否 APC阀的运转速度达到目标值,以及存储作为气体流动模式所需的旋转速度的真空泵单元的旋转速度的装置,当确定真空泵单元的运转速度时, APC阀达到目标值。
    • 75. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US07514332B2
    • 2009-04-07
    • US11276546
    • 2006-03-06
    • Hiroyuki Tanaka
    • Hiroyuki Tanaka
    • H01L21/336H01L21/8238
    • H01L29/7816H01L29/1095H01L29/42368H01L29/42376H01L29/66583H01L29/66681
    • A method for manufacturing a semiconductor device includes the steps of (a) forming a first region by selectively ion-implanting a second conductive type impurity into a first conductive type semiconductor layer without thermally diffusing an impurity, (b) forming a gate electrode including an edge vicinity region that is aligned with the first region in the horizontal position, and (c) forming a body layer including the first region and a second region that is formed adjacent to the first region and self-aligned with the first region and an edge of the gate electrode by forming the second region with a step of selectively ion-implanting a second conductive type impurity into the first conductive type semiconductor layer without thermally diffusing an impurity.
    • 一种制造半导体器件的方法包括以下步骤:(a)通过选择性地将第二导电型杂质离子注入到第一导电类型半导体层中而不使杂质热扩散而形成第一区域,(b)形成包括 边缘附近区域,其与水平位置中的第一区域对准,以及(c)形成包括第一区域的主体层和邻近第一区域形成并与第一区域自对准的第二区域, 通过以不使热杂质杂散的方式选择性地将第二导电型杂质离子注入第一导电型半导体层的步骤,形成第二区域。
    • 78. 发明授权
    • Surface acoustic wave apparatus and communications equipment
    • 表面声波装置和通信设备
    • US07453333B2
    • 2008-11-18
    • US11210157
    • 2005-08-23
    • Hiroyuki TanakaKiyohiro Iioka
    • Hiroyuki TanakaKiyohiro Iioka
    • H03H9/64
    • H03H9/6469H03H9/1085
    • A surface acoustic wave apparatus comprises a piezoelectric substrate 17 on the bottom face of which IDT electrodes 3 and 4 and an annular ground electrode 6 which encloses the IDT electrodes 3 and 4 and is connected to the IDT electrode 3, and a base substrate on the top face of which an annular ground conductor 7 is formed and which has an internal ground conductor layer 10a and a bottom face ground conductor layer 11a connected to the annular ground conductor 7 and an internal ground conductor layer 10b and a bottom face ground conductor layer 11b connected to the IDT electrode 4. A first ground conductor composed of the internal ground conductor layer 10a and the bottom face ground conductor layer 11a is electrically separated from a second ground conductor composed of the internal ground conductor layer 10b and the bottom face ground conductor layer 11b. The apparatus has an excellent out-of-band attenuation characteristic.
    • 表面声波装置包括位于其底面上的IDT电极3和4的压电基片17和围绕IDT电极3和4并与IDT电极3连接的环形接地电极6, 其顶面形成有环形接地导体7,并且具有连接到环形接地导体7的内部接地导体层10a和底面接地导体层11a,以及内部接地导体层10b和底面接地 连接到IDT电极4的导体层11b。 由内部接地导体层10a和底面接地导体层11a组成的第一接地导体与由内部接地导体层10b和底面接地导体层11b组成的第二接地导体电分离。 该装置具有优异的带外衰减特性。
    • 79. 发明申请
    • MAGNETIC RECORDING MEDIUM AND PROCESS FOR PRODUCING THE SAME
    • 磁记录介质及其制造方法
    • US20080241600A1
    • 2008-10-02
    • US12056568
    • 2008-03-27
    • Hiroyuki TanakaTsutomu IdeOsamu Inoue
    • Hiroyuki TanakaTsutomu IdeOsamu Inoue
    • G11B5/66B05D5/12
    • G11B5/73G11B5/7026
    • The present invention provides a magnetic recording medium wherein a fine non-magnetic inorganic powder, the dispersibility of which is improved, is used to improve the surface smoothness of a lower non-magnetic layer, thereby giving an excellent surface smoothness of an upper magnetic layer and electromagnetic conversion property; and a production process thereof. A magnetic recording medium comprising at least a non-magnetic support, a lower non-magnetic layer on one surface of the non-magnetic support, and an upper magnetic layer on the lower non-magnetic layer, wherein the upper magnetic layer contains at least a ferromagnetic powder, and a binder resin material, and the lower non-magnetic layer contains at least carbon black, iron oxide, and a binder resin material, and the iron oxide has an average major axis length of 30 to 100 nm, and a specific surface area based on the BET method of 80 to 120 m2/g, and the iron oxide contains moisture in an amount per unit specific surface area of 0.13 to 0.25 mg/m2.
    • 本发明提供了一种磁记录介质,其中改善了其分散性的细非磁性无机粉末用于改善下部非磁性层的表面平滑度,从而赋予上层磁性层优异的表面平滑度 和电磁转换特性; 及其制造方法。 至少包括非磁性载体,非磁性载体的一个表面上的下部非磁性层和下部非磁性层上的上磁性层的磁记录介质,其中上部磁性层至少含有 铁磁粉末和粘结剂树脂材料,下部非磁性层至少含有炭黑,氧化铁和粘合剂树脂材料,氧化铁的平均长轴长度为30〜100nm, 基于BET法的比表面积为80〜120m 2 / g,氧化铁含有每单位比表面积为0.13〜0.25mg / m 2的水分, / SUP>。