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    • 71. 发明申请
    • Quantum key distribution system and method using regulated single-photon source
    • 量子密钥分配系统和方法采用调制单光子源
    • US20050094818A1
    • 2005-05-05
    • US10712761
    • 2003-11-12
    • Kyo InoueEdo WaksYoshihisa Yamamoto
    • Kyo InoueEdo WaksYoshihisa Yamamoto
    • H04L9/12H04L9/08H04L9/00
    • H04L9/0858
    • A system and method for quantum key distribution uses a regulated single-photon source to sequentially generate a first photon and a second photon separated by a time interval Δt. The two photons are directed through a beam splitter that directs each photon to one of two transmission lines, which lead to two respective receivers. When one of the photons arrives at a receiver, it passes through an interferometer. One arm of the interferometer has a path length longer than the other arm by an amount equivalent to a photon time delay of Δt. The photon is then detected in one of three time slots by one of two single-photon detectors associated with each of the two interferometer outputs. Due to quantum-mechanical entanglement in phase and time between the two photons, the receivers can determine a secret quantum key bit value from their measurements of the time slots in which the photons arrived, or of the detectors where the photons arrived.
    • 用于量子密钥分配的系统和方法使用调节的单光子源来顺序地产生由时间间隔Deltat分离的第一光子和第二光子。 两个光子被引导通过分束器,其将每个光子引导到两个传输线中的一个,其导致两个相应的接收器。 当一个光子到达接收器时,它通过一个干涉仪。 干涉仪的一个臂具有比另一个臂长的路径长度等于Deltat的光子时间延迟的量。 然后通过与两个干涉仪输出中的每一个相关联的两个单光子检测器中的一个检测三个时隙之一中的光子。 由于两个光子之间的相位和时间的量子力学纠缠,接收器可以根据其光子到达的时隙或者光子到达的检测器的测量来确定秘密量子密钥位值。
    • 72. 发明授权
    • Engine torque control during multiple speed changes of an automatic transmission
    • 自动变速器多速变速时的发动机转矩控制
    • US06254508B1
    • 2001-07-03
    • US09425190
    • 1999-10-25
    • Kouichi KojimaHiroshi TsutsuiMasao SaitouMasaaki NishidaYoshihisa Yamamoto
    • Kouichi KojimaHiroshi TsutsuiMasao SaitouMasaaki NishidaYoshihisa Yamamoto
    • B60K4104
    • B60W10/06B60W10/04B60W10/11B60W10/115B60W30/18B60W30/1819F16H61/061F16H63/502F16H2059/425F16H2059/6807F16H2306/24Y10T477/677
    • In a multiple speed-change operation for switching between an up-shift operation and a down-shift operation, engine torque control is adapted to an actual change in speed-change state, whereby an abrupt change in rotational speed of the input shaft is prevented. One embodiment relates to a speed-change operation from the second speed to the third speed, wherein the engagement-side hydraulic pressure B4 rises and the release-side hydraulic pressure B5 drops, the rotational speed NT of the input shaft changes from a second speed state toward a third speed state and the engine torque TE is reduced by a predetermined amount TCU. If a command to perform a speed-change operation from the third speed to the second speed is issued during the aforementioned speed-change operation from the second speed to the third speed, control of the hydraulic pressures is switched to the speed-change operation from the third speed to the second speed. If it is detected because of the hydraulic pressure control that the direction of the change &ohgr; in rotational speed of the input shaft has changed toward the second speed, it is determined that the speed-change operation has actually started. Then, the torque reduction operation is suspended, and the torque is gradually restored.
    • 在上变速操作和换档操作之间切换的多次变速操作中,发动机扭矩控制适应于变速状态的实际变化,从而防止输入轴的转速急剧变化 。 一个实施例涉及从第二速度到第三速度的变速操作,其中接合侧液压B4上升,释放侧液压B5下降,输入轴的转速NT从第二速度 状态朝向第三速度状态,并且发动机转矩TE减小预定量TCU。 如果在从第二速度到第三速度的上述变速操作期间发出执行从第三速度到第二速度的变速操作的命令,则将液压控制切换到速度变化操作 第三速到第二速。 如果由于液压控制检测到输入轴的转速的变化方向Ω的方向朝向第二速度变化,则确定变速操作已经实际开始。 然后,停止转矩降低操作,并且扭矩逐渐恢复。
    • 73. 发明授权
    • Method of making released micromachined structures by directional etching
    • 通过定向蚀刻制造释放的微加工结构的方法
    • US6086774A
    • 2000-07-11
    • US993924
    • 1997-12-18
    • Francis HoYoshihisa Yamamoto
    • Francis HoYoshihisa Yamamoto
    • B81C1/00C25F3/02G01P15/08G01P15/09G01P15/12G01Q70/16B44C1/22C25F3/12G01P15/02
    • G01Q70/16B81C1/00531B82Y35/00G01P15/0802G01P15/0922G01P15/123B81B2201/0235B81B2203/0118B81C2201/0132B81C2201/0143G01P2015/0828
    • A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.
    • 通过使用至少两个方向蚀刻步骤来制造释放结构的方法。 悬臂,桥梁和许多其他结构可以用本发明制成。 在优选实施例中,以相对于基板表面非正常的角度执行两个定向蚀刻步骤,使得基底被切削并且结构被释放。 或者,可以以各种角度执行多于两个的定向蚀刻步骤。 例如,可以在定向蚀刻工艺期间连续旋转衬底。 通过本发明的方法形成的悬臂必须具有基本上三角形的横截面。 可以使用的定向蚀刻工艺包括聚焦离子束蚀刻和ECR等离子体蚀刻。 一些定向蚀刻工艺可能需要使用图案化的抗蚀剂层。 诸如聚焦离子束蚀刻的其它蚀刻工艺可以使用扫描技术来选择蚀刻哪些区域。 可以执行背面蚀刻以在释放的微加工结构下去除剩余的基底材料。 该方法特别适用于制备释放的悬臂。
    • 78. 发明授权
    • Quantum well exciton-polariton light emitting diode
    • 量子阱激子 - 极化子发光二极管
    • US5877509A
    • 1999-03-02
    • US970948
    • 1997-11-14
    • Stanley PauHui CaoYoshihisa Yamamoto
    • Stanley PauHui CaoYoshihisa Yamamoto
    • H01L33/06H01L33/10H01L29/06
    • H01L33/06B82Y10/00H01L33/105
    • A light emitting device made of semiconducting materials. The device has an optical microcavity which supports a resonant mode of predetermined photon energy. Within the cavity is a quantum well of predetermined thickness and energy depth. The quantum well is designed such that it forms bound electron, exciton, lower polariton, and hole energy states of predetermined energy. The energy of an exciton state is set to equal the predetermined photon energy of the microcavity mode such that polariton states are created. A means is provided for resonantly tunneling electrons into a quantum well energy state. In a first embodiment, electrons resonantly tunnel into an electron energy state. In a second embodiment, electrons resonantly tunnel into an exciton energy state, during which tunneling the electrons simultaneously fuse with holes to form excitons. In the first embodiment, the electron state to lower polariton state transition energy is made equal to the energy of a longitudinal optical (LO) phonon of the quantum well material. This energy equivalence facilitates the rapid thermalization of resonantly tunneled electrons to combine with holes and form polaritons resonant with the cavity mode. Thermalization is rapid because it only requires the scattering of a single LO phonon. The photon component of the polariton is then emitted through the leaky cavity reflector. The second embodiment sets the exciton to polariton transition energy equal to the LO phonon energy to facilitate rapid thermalization to the polariton state. Photons are then emitted through the leaky Bragg reflector in the same manner as the first embodiment.
    • 由半导体材料制成的发光器件。 该器件具有支持预定光子能量的共振模式的光学微腔。 在腔内是一个预定厚度和能量深度的量子阱。 量子阱被设计成使其形成结合的电子,激子,低极化子和预定能量的空穴能态。 将激子状态的能量设定为等于微腔模式的预定光子能量,从而产生极化子态。 提供了一种用于将电子谐振地隧穿到量子阱能量状态的装置。 在第一实施例中,电子谐振地隧穿成电子能态。 在第二个实施例中,电子谐振地隧道入激子能态,在此期间,电子同时与空穴一起熔化以形成激子。 在第一实施例中,将使极性较小的跃迁能量降低的电子状态等于量子阱材料的纵向光学(LO)声子的能量。 这种能量等价有助于谐振隧穿电子的快速热化与空穴结合并形成与腔模共振的极化子。 热化是快速的,因为它只需要单个LO声子的散射。 然后通过泄漏腔反射器发射极化子的光子分量。 第二实施例将激子设置为等于LO声子能量的极化子跃迁能量,以促进快速热化至极化子态。 然后以与第一实施例相同的方式通过漏布拉格反射器发射光子。