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    • 76. 发明授权
    • Charged-particle-beam microlithography methods exhibiting reduced coulomb effects
    • 显示减小的库仑效应的带电粒子束微光刻法
    • US06756182B2
    • 2004-06-29
    • US10170040
    • 2002-06-11
    • Sumito ShimizuKazuaki Suzuki
    • Sumito ShimizuKazuaki Suzuki
    • G03C500
    • B82Y10/00B82Y40/00G03F1/20H01J37/3174H01J2237/31791Y10S430/143
    • Methods are disclosed for performing charged-particle-beam (CPB, e.g., electron-beam) microlithography with reduced Coulomb effects being manifest in pattern images as formed on the surface of a sensitive substrate. The pattern is defined on a segmented reticle, which can be a scattering-stencil reticle or scattering-membrane reticle. In an embodiment, the beam current actually reaching the substrate, as a proportion of beam current actually passing through the reticle, is reduced to 50% or less during exposure of the pattern. To achieve this reduction, the pattern as defined on the reticle can be normal or inverted in tone as required, and the resist on the substrate can be positive or negative in tone as required. In an example embodiment, the beam current reaching the substrate is reduced by establishing an opening ratio of 50% or less for the pattern as a whole as defined on the reticle. The opening ratio is expressed as 100[Aws/(Aws+Ahs)], wherein Ahs is a total area of the reticle occupied by both the weakly scattering reticle membrane and the highly scattering layer, and Aws is a total area of the reticle occupied by only the weakly scattering reticle membrane.
    • 公开了用于执行带电粒子束(CPB,例如电子束)微光刻的方法,其具有减少的库仑效应,表现为形成在敏感基板的表面上的图案图像。 该图案被定义在分割的掩模版上,该掩模版可以是散射 - 模板掩模版或散射膜掩模版。 在一个实施例中,当图案的曝光期间,通过实际通过标线的束电流的比例实际到达衬底的束电流减小到50%或更小。 为了实现这种减小,如在掩模版上限定的图案可以根据需要正常或反转,并且基板上的抗蚀剂可以根据需要为正或负色调。 在一个示例性实施例中,通过为分划板上定义的整体图案建立50%或更小的开口率来减小到达衬底的束电流。 开口率表示为100 [Aws /(Aws + Ahs)],其中Ahs是由弱散射掩模版膜和高度散射层所占据的掩模版的总面积,Aws是所述掩模版的总面积 只有弱散射掩模版膜。
    • 77. 发明授权
    • Projection-exposure methods and apparatus exhibiting increased throughput
    • 投影曝光方法和装置显示出增加的产量
    • US06699639B2
    • 2004-03-02
    • US10359524
    • 2003-02-05
    • Kazuaki Suzuki
    • Kazuaki Suzuki
    • G03C500
    • B82Y10/00B82Y40/00G03F7/70425G03F7/70433G03F7/70475H01J37/3174H01J2237/31761H01J2237/31764H01J2237/31767
    • Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.
    • 公开了通过提供分划板台和晶片台移动以完成曝光的改进方案来展现增加的生产量的投影曝光装置和方法。 “图案原件”(例如,掩模版)上的裸片图案的部分被能量束(例如,电磁辐射束或带电粒子)依次照射。 能量束通过图案部分,并通过投影光学系统在基板上形成缩小图像。 在移动图案原稿和基板的同时,根据曝光顺序顺序地照射整个裸片图案,并且将裸片图案缩小地转印到其上照射图案部分的图像被缝合在一起的基板。 当将模具图案转印并暴露于基板上的多个位置时,曝光顺序在曝光每个模具图案之后反转。
    • 78. 发明授权
    • Reticle-focus detector, and charged-particle-beam microlithography apparatus and methods comprising same
    • 光栅聚焦检测器和带电粒子束微光刻设备及其方法
    • US06621089B1
    • 2003-09-16
    • US09694089
    • 2000-10-19
    • Kazuaki Suzuki
    • Kazuaki Suzuki
    • G03F900
    • B82Y10/00B82Y40/00H01J37/304H01J37/3174H01J2237/31794
    • The thickness of the reticle used in charged-particle-beam (CPB) microlithography is a few microns at most. Hence, the reticle bends easily and flexes when subject to vibration, causing instability in reticle axial height position relative to the projection-lens system, and errors in image focus, rotation and magnification. Apparatus are disclosed that include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique (not 0 degrees) angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate operation of, e.g., an exposure meter.
    • 用于带电粒子束(CPB)微光刻的掩模版的厚度最多为几微米。 因此,当受到振动时,掩模版容易弯曲并弯曲,导致相对于投影透镜系统的标线轴高度位置不稳定,以及图像聚焦,旋转和放大的误差。 公开了包括用于检测掩模版的轴向高度位置的装置的装置。 该装置产生一束或多束光(IR到可见光)以倾斜(非0度)入射角撞击光罩,检测从标线片表面反射的光,并检测由 高度检测器 因此,准确地检测到掩模版焦点。 可以使用多个检测光束,从而能够高精度地检测光罩的轴向高度位置和倾斜度。 标线片位置数据可用于调节例如曝光计的操作。
    • 79. 发明授权
    • Projection-exposure methods and apparatus exhibiting increased throughput
    • 投影曝光方法和装置显示出增加的产量
    • US06590218B1
    • 2003-07-08
    • US09461156
    • 1999-12-14
    • Kazuaki Suzuki
    • Kazuaki Suzuki
    • H61J37304
    • B82Y10/00B82Y40/00G03F7/70425G03F7/70433G03F7/70475H01J37/3174H01J2237/31761H01J2237/31764H01J2237/31767
    • Projection-exposure apparatus and methods are disclosed that exhibit increased throughput by providing improved schemes by which the reticle stage and wafer stage move to accomplish exposure. Portions of a die pattern on a “pattern original” (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern.
    • 公开了通过提供分划板台和晶片台移动以完成曝光的改进方案来展现增加的生产量的投影曝光装置和方法。 “图案原件”(例如,掩模版)上的裸片图案的部分被能量束(例如,电磁辐射束或带电粒子)依次照射。 能量束通过图案部分,并通过投影光学系统在基板上形成缩小图像。 在移动图案原稿和基板的同时,根据曝光顺序顺序地照射整个裸片图案,并且将裸片图案缩小地转印到其上照射图案部分的图像被缝合在一起的基板。 当将模具图案转印并暴露于基板上的多个位置时,曝光顺序在曝光每个模具图案之后反转。
    • 80. 发明授权
    • Charged-particle-beam projection-exposure apparatus and methods exhibiting improved alignment and registration of projected pattern portions
    • 带电粒子束投影曝光装置和显示改进的投射图案部分的对准和对准的方法
    • US06573515B1
    • 2003-06-03
    • US09419829
    • 1999-10-14
    • Kazuaki Suzuki
    • Kazuaki Suzuki
    • G21G500
    • B82Y10/00B82Y40/00H01J37/3026H01J37/3174H01J2237/31764
    • Charged-particle-beam projection-exposure apparatus and methods are disclosed that achieve improved pattern-transfer accuracy, especially when using a segmented stencil reticle. To such end, the pattern field of a reticle pattern is divided into multiple exposure units that are individually and sequentially exposed onto corresponding regions on a substrate (e.g., semiconductor wafer). Any exposure units defining a feature surrounding an island region are split into complementary exposure units. Boundaries between adjacent exposure units are placed so as not to cross features or feature portions in the respective exposure units, defined by “white” regions of the reticle. Thus, when images of the exposure units are stitched together on the wafer, improved feature registration, alignment, and linewidth control are achieved.
    • 公开了充电粒子束投影曝光装置和方法,其实现了改进的图案转印精度,特别是当使用分段模版掩模版时。 为此,将掩模版图案的图案区域分割为单独地且顺序地暴露在基板(例如,半导体晶片)上的相应区域上的多个曝光单元。 定义围绕岛屿区域的特征的任何曝光单元被分成互补曝光单元。 相邻曝光单元之间的边界被放置成不会在由掩模版的“白色”区域限定的各个曝光单元中的特征部分或特征部分交叉。 因此,当在晶片上将曝光单元的图像拼接在一起时,实现了改进的特征对准,对准和线宽控制。