专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06833914B1 System and method for efficient simulation of reflectometry response from two-dimensional grating structures 有权
标题翻译：用于有效模拟来自二维光栅结构的反射测量响应的系统和方法
公开(公告)号：US06833914B1
公开(公告)日：2004-12-21
申请号：US10004495
申请日：2001-10-23
申请人： Junwei Bao , Xinhui Niu , Nickhil Jakatdar
发明人： Junwei Bao , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01N2188
CPC分类号： G01N21/956 , G01N21/47 , G01N21/9501
摘要： The present invention relates to an efficient method for accurately simulating the integrated reflectometry response from two-dimensional grating structures using a few points. First a first and a second point are determined within an aperture located in an optical system. Next, the reflectance response of light incident at the first point and the second point are simulated. The approximated integrated reflectance response of the aperture is then determined based on the reflectance response at the first point and the second point and the weighted average of the reflectance response at the first point and the second point.
摘要翻译：本发明涉及一种用于使用几点精确地模拟来自二维光栅结构的积分反射测量响应的有效方法。首先，在位于光学系统中的孔内确定第一和第二点。接下来，模拟在第一点和第二点入射的光的反射响应。然后基于第一点和第二点处的反射响应和第一点和第二点处的反射响应的加权平均值来确定孔径的近似积分反射响应。

72. 发明授权

US06775015B2 Optical metrology of single features 有权
标题翻译：光学计量单功能
公开(公告)号：US06775015B2
公开(公告)日：2004-08-10
申请号：US10175207
申请日：2002-06-18
申请人： Joerg Bischoff , Xinhui Niu , Junwei Bao
发明人： Joerg Bischoff , Xinhui Niu , Junwei Bao
IPC分类号： G01B1102
CPC分类号： G01B11/24 , G01N21/4788
摘要： The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
摘要翻译：可以通过使用聚焦在单个特征上的光束获得单个特征的光学特征来确定形成在晶片上的单个特征的轮廓。所获得的光学特征随后可以与一组模拟的光学特征进行比较，其中每个模拟的光学特征对应于单个特征的假设轮廓，并且基于假设轮廓进行建模。

73. 发明授权

US08381140B2 Wide process range library for metrology 有权
标题翻译：用于计量的宽工艺范围库
公开(公告)号：US08381140B2
公开(公告)日：2013-02-19
申请号：US13025654
申请日：2011-02-11
申请人： John J. Hench , Wen Jin , Junwei Bao
发明人： John J. Hench , Wen Jin , Junwei Bao
IPC分类号： G06F17/50
CPC分类号： G03F7/70491 , G03F7/70625 , H01L22/12
摘要： Methods of generating wide process range libraries for metrology are described. For example, a method includes generating a first library having a first process range for a first parameter. A second library is generated having a second process range for the first parameter. The second process range is overlapping with the first process range. The second library is stitched to the first library to generate a third library having a third process range for the first parameter. The third process range is wider than each of the first and second process ranges.
摘要翻译：描述了生成用于度量的广泛过程范围库的方法。例如，一种方法包括生成具有第一参数的第一处理范围的第一库。生成具有第一参数的第二处理范围的第二库。第二个处理范围与第一个处理范围重叠。第二个库缝合到第一个库以生成第三个库，该第三个库具有第一个参数的第三个处理范围。第三处理范围比第一和第二处理范围的宽。

74. 发明授权

US07765076B2 Allocating processing units to processing clusters to generate simulated diffraction signals 失效
$Allocating processing units to processing clusters to generate simulated diffraction signals$
标题翻译：将处理单元分配到处理簇以产生模拟衍射信号
公开(公告)号：US07765076B2
公开(公告)日：2010-07-27
申请号：US11525793
申请日：2006-09-22
申请人： Hemalatha Erva , Hong Qiu , Junwei Bao , Vi Vuong
发明人： Hemalatha Erva , Hong Qiu , Junwei Bao , Vi Vuong
IPC分类号： G01N37/00
CPC分类号： G06F9/505
摘要： In allocating processing units, first and second requests for jobs are obtained. First and second numbers of processing units requested are determined. First and second numbers of available processing units are determined. When the first number of available processing units is non-zero, the first number of available number of processing units or the first number of processing units requested is assigned to a first processing cluster. A first processing unit in the first processing cluster is designated as a master node. When the second number of available processing units is non-zero, the second number of available number of processing units or the second number of processing units requested is assigned to a second processing cluster. The first processing unit in the second processing cluster is designated as a slave node. The first and second jobs are assigned to the first and second processing clusters, respectively.
摘要翻译：在分配处理单元时，获得第一和第二个作业请求。确定请求的第一和第二数量的处理单元。确定可用处理单元的第一和第二数量。当第一数量的可用处理单元不为零时，将第一数量的可用处理单元数量或所请求的第一数量的处理单元分配给第一处理簇。第一处理簇中的第一处理单元被指定为主节点。当第二数量的可用处理单元是非零时，将第二数量的可用数量的处理单元或第二数量的处理单元分配给第二处理簇。第二处理簇中的第一处理单元被指定为从节点。第一和第二作业分别分配给第一和第二处理簇。

75. 发明授权

US07586623B2 Optical metrology of single features 失效
标题翻译：光学计量单功能
公开(公告)号：US07586623B2
公开(公告)日：2009-09-08
申请号：US12127640
申请日：2008-05-27
申请人： Joerg Bischoff , Xinhui Niu , Junwei Bao
发明人： Joerg Bischoff , Xinhui Niu , Junwei Bao
IPC分类号： G01B11/24
CPC分类号： G01B11/24 , G01N21/4788
摘要： The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
摘要翻译：可以通过使用聚焦在单个特征上的光束获得单个特征的光学特征来确定形成在晶片上的单个特征的轮廓。所获得的光学特征随后可以与一组模拟的光学特征进行比较，其中每个模拟的光学特征对应于单个特征的假设轮廓，并且基于假设轮廓进行建模。

76. 发明授权

US07474993B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07474993B2
公开(公告)日：2009-01-06
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

77. 发明授权

US07469192B2 Parallel profile determination for an optical metrology system 失效
标题翻译：光学测量系统的平行轮廓确定
公开(公告)号：US07469192B2
公开(公告)日：2008-12-23
申请号：US11485046
申请日：2006-07-11
申请人： Tri Thanh Khuong , Junwei Bao , Jeffrey A. Chard , Wei Liu , Ying Zhu , Sachin Deshpande , Pranav Sheth , Hong Qiu
发明人： Tri Thanh Khuong , Junwei Bao , Jeffrey A. Chard , Wei Liu , Ying Zhu , Sachin Deshpande , Pranav Sheth , Hong Qiu
IPC分类号： G06F19/00 , G01B11/00
CPC分类号： G01B11/24 , G01N21/4788 , G01N21/95607 , G01N2021/95615 , G03F7/70625
摘要： A system to process requests for wafer structure profile determination from optical metrology measurements off a plurality of structures formed on one or more wafer includes a diffraction signal processor, a diffraction signal distributor, and a plurality of profile search servers. The diffraction signal processor is configured to obtain a plurality of measured diffraction signals of the plurality of structures. The diffraction signal distributor is coupled to the diffraction signal processor. The diffraction signal processor is configured to transmit the plurality of measured diffraction signals to the diffraction signal distributor. The plurality of profile search servers is coupled to the diffraction signal distributor. The diffraction signal distributor is configured to distribute the plurality of measured diffraction signals to the plurality of profile search servers. The profile search servers are configured to process in parallel the plurality of measured diffraction signals to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.
摘要翻译：包括衍射信号处理器，衍射信号分配器和多个轮廓搜索服务器，用于处理从一个或多个晶片上形成的多个结构的光学测量测量的晶圆结构轮廓确定的请求的系统。衍射信号处理器被配置为获得多个结构的多个测量的衍射信号。衍射信号分配器耦合到衍射信号处理器。衍射信号处理器被配置为将多个测量的衍射信号传输到衍射信号分配器。多个轮廓搜索服务器耦合到衍射信号分配器。衍射信号分配器被配置为将多个测量的衍射信号分布到多个简档搜索服务器。轮廓搜索服务器被配置为并行处理多个测量的衍射信号，以确定与多个测量的衍射信号相对应的多个结构的轮廓。

78. 发明授权

US07417750B2 Consecutive measurement of structures formed on a semiconductor wafer using an angle-resolved spectroscopic scatterometer 失效
标题翻译：使用角度分辨光谱散射仪连续测量在半导体晶片上形成的结构
公开(公告)号：US07417750B2
公开(公告)日：2008-08-26
申请号：US11594659
申请日：2006-11-07
申请人： Vi Vuong , Junwei Bao , Manuel Madriaga
发明人： Vi Vuong , Junwei Bao , Manuel Madriaga
IPC分类号： G01B11/04 , G01B15/00 , G01N21/88
CPC分类号： G01N21/4788 , G01N21/95607 , G01N2021/8416 , G01N2021/95615
摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison of the second measured diffraction signal to the second simulated diffraction signal.
摘要翻译：通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。使用角度分辨光谱散射仪连续测量第一和第二测量的衍射信号。将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。轮廓模型具有轮廓参数，表征第一结构的几何形状和方位角参数，其定义入射光束与第一或第二结构的周期性方向之间的角度。基于比较确定第一结构的一个或多个特征。将第二测量的衍射信号与使用与第一模拟衍射信号相同的轮廓模型生成的第二模拟衍射信号进行比较，其中方位角参数具有与用于产生的方位角参数的值不同的约90度的值第一个模拟衍射信号。基于第二测量衍射信号与第二模拟衍射信号的比较来确定第二结构的一个或多个特征。

79. 发明申请

US20080170241A1 Automated process control using optical metrology and a correlation between profile models and key profile shape variables 失效
标题翻译：使用光学测量的自动过程控制以及轮廓模型和关键轮廓形状变量之间的相关性
公开(公告)号：US20080170241A1
公开(公告)日：2008-07-17
申请号：US11653061
申请日：2007-01-12
申请人： Jeffrey Chard , Junwei Bao , Manuel Madriaga
发明人： Jeffrey Chard , Junwei Bao , Manuel Madriaga
IPC分类号： G01B11/14
CPC分类号： H01L22/12 , G03F7/70625 , H01L2924/0002 , H01L2924/00
摘要： A process step in fabricating a structure on a wafer in a wafer application having one or more process steps and one or more process parameters is controlled by determining a correlation between a set of profile models and one or more key profile shape variables. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. One profile model is selected from the set of profile models based on the correlation and a value of at least one key profile shape variable of the process of the wafer application to be used in fabricating the structure. The structure is fabricated in a first fabrication process cluster using the process step and the value of the at least one key profile shape variable. A measured diffraction signal is obtained off the structure. One or more profile parameters of the structure are determined based on the measured diffraction signal and the selected profile model. The one or more determined profile parameters are transmitted to the first fabrication process cluster or a second fabrication process cluster.
摘要翻译：通过确定一组轮廓模型和一个或多个关键轮廓形状变量之间的相关性来控制在具有一个或多个处理步骤和一个或多个处理参数的晶片应用中制造晶片上的结构的工艺步骤。使用一组轮廓参数来定义每个轮廓模型以表征结构的形状。不同的配置参数集定义集合中的配置文件模型。一个或多个关键轮廓形状变量包括一个或多个轮廓参数或一个或多个过程参数。基于相关性和用于制造结构的晶片应用的处理的至少一个关键轮廓形状变量的值，从该组轮廓模型中选择一个轮廓模型。该结构在第一制造工艺组中使用工艺步骤和至少一个关键型材形状变量的值来制造。从该结构获得测量的衍射信号。基于所测量的衍射信号和选择的轮廓模型来确定结构的一个或多个轮廓参数。一个或多个确定的轮廓参数被传送到第一制造过程集群或第二制造过程集群。

80. 发明申请

US20080151269A1 MODEL AND PARAMETER SELECTION FOR OPTICAL METROLOGY 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US20080151269A1
公开(公告)日：2008-06-26
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式