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71. 发明授权

US08236372B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials 失效
标题翻译：形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
公开(公告)号：US08236372B2
公开(公告)日：2012-08-07
申请号：US12483455
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

72. 发明授权

US08034655B2 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays 有权
标题翻译：非易失性电阻氧化物存储单元，非易失性电阻氧化物存储器阵列以及形成非易失性电阻氧化物存储器单元和存储器阵列的方法
公开(公告)号：US08034655B2
公开(公告)日：2011-10-11
申请号：US12099267
申请日：2008-04-08
申请人： John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
发明人： John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
IPC分类号： H01L21/8239
CPC分类号： H01L45/04 , G11C11/56 , G11C13/00 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。绝缘材料沉积在第一电极上。在第一电极上形成绝缘材料的开口。开口包括侧壁和底座。开口侧壁和基底衬有包含少于填充开口的多电阻态金属氧化物材料的多电阻状态层。存储单元的第二导电电极形成在多个电阻状态层的横向内侧的开口的内部，该电阻层衬在侧壁上，并且在衬底基底上的多电阻状态层的顶部形成。考虑了其他方面和实现。

73. 发明授权

US07851307B2 Method of forming complex oxide nanodots for a charge trap 有权
标题翻译：形成电荷陷阱复合氧化物纳米点的方法
公开(公告)号：US07851307B2
公开(公告)日：2010-12-14
申请号：US11840485
申请日：2007-08-17
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
IPC分类号： H01L21/336
CPC分类号： H01L21/31691 , H01L21/28273 , H01L21/3142 , H01L29/42332 , H01L29/7881
摘要： Methods and devices are disclosed, such as those involving forming a charge trap for, e.g., a memory device, which can include flash memory cells. A substrate is exposed to temporally-separated pulses of a titanium source material, a strontium source material, and an oxygen source material capable of forming an oxide with the titanium source material and the strontium source material to form the charge trapping layer on the substrate.
摘要翻译：公开了方法和装置，例如涉及为例如可以包括闪速存储器单元的存储器件形成电荷阱的那些。将衬底暴露于钛源材料，锶源材料和能够与钛源材料和锶源材料形成氧化物的氧源材料的时间分离的脉冲，以在衬底上形成电荷捕获层。

74. 发明申请

US20100003782A1 Methods Of Forming A Non-Volatile Resistive Oxide Memory Cell And Methods Of Forming A Non-Volatile Resistive Oxide Memory Array 有权
标题翻译：形成非易失性电阻氧化物记忆单元的方法和形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US20100003782A1
公开(公告)日：2010-01-07
申请号：US12166604
申请日：2008-07-02
申请人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej Sandhu , Neil Greeley , Kunal Parekh
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej Sandhu , Neil Greeley , Kunal Parekh
IPC分类号： H01L21/16
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。含金属氧化物的材料形成在第一导电电极上。蚀刻停止材料沉积在包含金属氧化物的材料上。导电材料沉积在蚀刻停止材料上。包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。考虑其他实现。

75. 发明申请

US20070257839A1 System and method to perform network node localization training using a mobile node 有权
标题翻译：使用移动节点执行网络节点定位训练的系统和方法
公开(公告)号：US20070257839A1
公开(公告)日：2007-11-08
申请号：US11418665
申请日：2006-05-05
申请人： Bhaskar Srinivasan , Lakshmi Venkatraman , Abtin Keshavarzian
发明人： Bhaskar Srinivasan , Lakshmi Venkatraman , Abtin Keshavarzian
IPC分类号： H01Q3/00 , G01S3/02
CPC分类号： G01S5/02 , H04W64/003
摘要： A method and system for determining a location of at least one stationary node of a wireless network, which includes providing a predetermined path within a geographic space of the wireless network, prior to localization, moving a mobile node along the predetermined path, measuring a network parameter with respect to the mobile node as it moves along the predetermined path, and performing a localization scheme to estimate the location of the at least one stationary node using the measured network parameter.
摘要翻译：一种用于确定无线网络的至少一个固定节点的位置的方法和系统，其包括在定位之前在所述无线网络的地理空间内提供预定路径，沿着所述预定路径移动移动节点，测量网络参数相对于移动节点沿着预定路径移动，并且执行定位方案以使用测量的网络参数来估计至少一个固定节点的位置。

76. 发明申请

US20070076762A1 Method and system for time synchronization in communication networks 有权
标题翻译：通信网络中时间同步的方法和系统
公开(公告)号：US20070076762A1
公开(公告)日：2007-04-05
申请号：US11241298
申请日：2005-09-30
申请人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan
发明人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan
IPC分类号： H04J1/10 , H04B7/14 , H04J3/06 , H04J3/08
CPC分类号： H04B7/2696 , H04J3/0638 , H04L7/0008
摘要： A method of synchronizing a network includes transmitting a tone signal to convey time information and setting a local time according to the conveyed time information.
摘要翻译：一种同步网络的方法包括发送音调信号以传送时间信息并根据传送的时间信息设置本地时间。

77. 发明申请

US20060269811A1 Zinc/air battery with improved lifetime 有权
公开(公告)号：US20060269811A1
公开(公告)日：2006-11-30
申请号：US11137084
申请日：2005-05-24
申请人： Dirk Lange , Wilhelm Frey , Bhaskar Srinivasan
发明人： Dirk Lange , Wilhelm Frey , Bhaskar Srinivasan
IPC分类号： H01M12/06 , H01M2/08 , H01M8/04
CPC分类号： H01M6/5044 , H01M6/425 , H01M6/44 , H01M6/5011 , H01M12/06
摘要： A zinc/air battery includes a plurality zinc/air battery cells and an arrangement for exposing the plurality of zinc/air battery cells to air wherein the exposing arrangement opens the plurality of zinc/air battery cells in a serial manner such that only one cell is operative at a time.

78. 发明授权

US09577186B2 Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells 有权
标题翻译：非挥发性电阻氧化物存储单元和形成非易失性电阻氧化物存储单元的方法
公开(公告)号：US09577186B2
公开(公告)日：2017-02-21
申请号：US13488190
申请日：2012-06-04
申请人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
发明人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
IPC分类号： H01L21/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/04 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material. The forming thereof includes etching through the conductive material to form opposing laterally outermost conductive edges of said conductive material in the one planar cross section at the conclusion of said etching which are received laterally outward of the opposing laterally outermost edges of the first conductive electrode in the one planar cross section.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。第一导电电极在一个平面横截面中具有垂直最外表面和在最外表面处的相对的横向最外边缘。在第一导电电极上形成包含多电阻态金属氧化物的材料。导电材料沉积在多电阻状态的含金属氧化物的材料上。包含导电材料的存储单元的第二导电电极被接收在多电阻状态的含金属氧化物的材料上。其形成包括通过导电材料的蚀刻，以在所述蚀刻结束时在一个平面截面中形成所述导电材料的相对的横向最外面的导电边缘，其在第一导电电极的相对的横向最外边缘的横向外侧接收一个平面截面。

79. 发明授权

US08861179B2 Capacitors having dielectric regions that include multiple metal oxide-comprising materials 有权
标题翻译：具有包括多个含金属氧化物的材料的电介质区域的电容器
公开(公告)号：US08861179B2
公开(公告)日：2014-10-14
申请号：US13597708
申请日：2012-08-29
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
IPC分类号： H01G4/06 , H01G4/20 , H01G4/10
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / + 1.1V。

80. 发明授权

US08557697B2 Vapor deposition methods for forming a metal-containing layer on a substrate 有权
标题翻译：在基板上形成含金属层的气相沉积方法
公开(公告)号：US08557697B2
公开(公告)日：2013-10-15
申请号：US12893807
申请日：2010-09-29
申请人： Bhaskar Srinivasan , John Smythe
发明人： Bhaskar Srinivasan , John Smythe
IPC分类号： H01L21/4763
CPC分类号： C23C16/405 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01G4/085 , H01G4/1227 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31691
摘要： Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
摘要翻译：本文所述的原子层沉积方法可有利地用于在基底上形成含金属的层。例如，如本文所述的某些方法可以形成具有低碳含量（例如低碳酸锶含量）的钛酸锶层，其可导致具有高介电常数的层。

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