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71. 发明申请

US20130068391A1 SLIT VALVE APPARATUS, SYSTEMS, AND METHODS 有权
标题翻译： SLIT VALVE设备，系统和方法
公开(公告)号：US20130068391A1
公开(公告)日：2013-03-21
申请号：US13608389
申请日：2012-09-10
申请人： John J. Mazzocco , Dale Robert Du Bois , Juan Carlos Rocha-Alvarez
发明人： John J. Mazzocco , Dale Robert Du Bois , Juan Carlos Rocha-Alvarez
IPC分类号： E06B11/02 , B05C11/00 , C23C16/44
CPC分类号： C23C14/56 , C23C16/54 , F16K3/0218 , F16K3/0254 , F16K3/16 , F16K3/22 , F16K3/314 , F16K51/02
摘要： Slit valve apparatuses are described. In one aspect, a slit valve apparatus is disclosed having a gate with at least one sealing surface, a blocker element, and a connector member that structurally connects the gate and the blocker element. Systems and methods including the slit valve apparatus are also disclosed, as are numerous other aspects.
摘要翻译：描述了狭缝阀装置。在一个方面，公开了一种狭缝阀装置，其具有至少一个密封表面的门，阻塞件，以及在结构上连接门和阻挡元件的连接器构件。还公开了包括狭缝阀装置的系统和方法，以及许多其它方面。

72. 发明申请

US20120187534A1 PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 失效
标题翻译：用于高电容应用的氧化电介质的脉冲方法
公开(公告)号：US20120187534A1
公开(公告)日：2012-07-26
申请号：US13011946
申请日：2011-01-24
申请人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
发明人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
IPC分类号： H01L29/02 , H01L21/28
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储单元的系统，方法和装置。本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。公开了许多附加方面。

73. 发明授权

US06591850B2 Method and apparatus for fluid flow control 失效
公开(公告)号：US06591850B2
公开(公告)日：2003-07-15
申请号：US09895104
申请日：2001-06-29
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
IPC分类号： G05D1100
CPC分类号： G05D7/0635 , Y10T137/0363 , Y10T137/2524 , Y10T137/2529 , Y10T137/265
摘要： The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.

74. 发明申请

US20120211484A1 METHODS AND APPARATUS FOR A MULTI-ZONE PEDESTAL HEATER 审中-公开
标题翻译：多区加热器的方法和装置
公开(公告)号：US20120211484A1
公开(公告)日：2012-08-23
申请号：US13033592
申请日：2011-02-23
申请人： Jianhua Zhou , Juan Carlos Rocha-Alvarez
发明人： Jianhua Zhou , Juan Carlos Rocha-Alvarez
IPC分类号： H05B3/68 , H01C17/02
CPC分类号： H01L21/67248 , H01L21/67103 , Y10T29/49083
摘要： The present invention provides systems, methods and apparatus for manufacturing a multi-zone pedestal heater. A multi-zone pedestal heater includes a heater plate which includes a first zone including a first heating element and a first thermocouple for sensing the temperature of the first zone wherein the first zone is disposed in the center of the heater plate; and a second zone including a second heating element and a first embedded thermocouple for sensing the temperature of the second zone wherein the first embedded thermocouple includes a first longitudinal piece that extends from a center of the heater plate to the second zone and the first longitudinal piece is entirely encased within the heater plate. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造多区基座加热器的系统，方法和装置。多区基座加热器包括加热板，加热板包括第一区域，第一区域包括第一加热元件和第一热电偶，用于感测第一区域的温度，其中第一区域设置在加热器板的中心; 以及第二区域，包括第二加热元件和用于感测第二区域的温度的第一嵌入式热电偶，其中第一嵌入式热电偶包括从加热器板的中心延伸到第二区域的第一纵向件和第一纵向件被完全封装在加热器板内。公开了许多附加方面。

75. 发明授权

US07465357B2 Computer-readable medium that contains software for executing a method for cleaning a CVD chamber 失效
标题翻译：包含用于执行清洁CVD室的方法的软件的计算机可读介质
公开(公告)号：US07465357B2
公开(公告)日：2008-12-16
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

76. 发明授权

US07464717B2 Method for cleaning a CVD chamber 失效
标题翻译：清洗CVD室的方法
公开(公告)号：US07464717B2
公开(公告)日：2008-12-16
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

77. 发明授权

US06914014B2 Method for curing low dielectric constant film using direct current bias 失效
标题翻译：使用直流偏压固化低介电常数膜的方法
公开(公告)号：US06914014B2
公开(公告)日：2005-07-05
申请号：US10342077
申请日：2003-01-13
申请人： Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Maosheng Zhao
发明人： Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Maosheng Zhao
IPC分类号： C23C16/30 , C23C16/56 , H01L21/316 , H01L21/768 , H01L21/3105
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02216 , H01L21/02274 , H01L21/31633 , H01L21/76825 , H01L21/76826
摘要： A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.
摘要翻译：一种在基板上沉积低介电常数膜的方法。该方法包括在设置在化学气相沉积室中的衬底上沉积包含硅，碳，氧和氢的低介电常数膜，将包含含氢气体的气体混合物引入化学气相沉积室，形成等离子体使用射频功率接近低介电常数膜的气体混合物，并且将至少一个基板或气体分布板施加直流偏压以固化低介电常数膜。

78. 发明授权

US06709721B2 Purge heater design and process development for the improvement of low k film properties 失效
标题翻译：吹扫加热器设计和工艺开发，用于改善低k膜性能
公开(公告)号：US06709721B2
公开(公告)日：2004-03-23
申请号：US09820586
申请日：2001-03-28
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
IPC分类号： C23C1640
CPC分类号： C23C16/45521 , C23C16/401 , C23C16/455 , C23C16/4585 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/31633 , Y10T428/31
摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.
摘要翻译：本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。含有至少载体气体，氧化剂，碳气体源或其组合的工艺气体混合物通过衬底支撑件中的吹扫气体入口邻近衬底的边缘提供，以便于沉积低k碳掺杂氧化硅膜比衬底的内部具有比衬底边缘更高浓度的氧化硅。

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