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71. 发明授权

US06844214B1 Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication 失效
标题翻译：基于微机电系统的传感器，传感器阵列，感测系统，感测方法和制造方法
公开(公告)号：US06844214B1
公开(公告)日：2005-01-18
申请号：US10604850
申请日：2003-08-21
申请人： Ping Mei , Decai Sun , Robert A. Street
发明人： Ping Mei , Decai Sun , Robert A. Street
IPC分类号： B81B3/00 , H01L21/00 , H01L23/48 , H01R11/22
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2201/038 , B81B2201/047 , B81B2203/0118 , B81C2201/0167 , H01R12/52
摘要： A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.
摘要翻译：基于微机电系统（MEMS）的传感器包括：限定平面的基板; 具有第一应力的第一导电材料层，所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸，并且所述第二部分与所述衬底断开并且延伸到基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层，所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。应力形成应力梯度，该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。

72. 发明授权

US06818535B2 Thin phosphorus nitride film as an n-type doping source used in a laser doping technology 有权
标题翻译：作为用于激光掺杂技术的n型掺杂源的薄磷氮化膜
公开(公告)号：US06818535B2
公开(公告)日：2004-11-16
申请号：US10282265
申请日：2002-10-28
申请人： Jeng Ping Lu , Ping Mei , James B. Boyce
发明人： Jeng Ping Lu , Ping Mei , James B. Boyce
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L21/2254 , H01L29/78669
摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.
摘要翻译：描述了用于激光掺杂半导体材料的改进的方法和系统。在本发明中，使用氮化磷作为掺杂剂源。使磷氮化物与要掺杂的半导体的区域紧密接近。激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

73. 发明授权

US06757314B2 Structure for nitride based laser diode with growth substrate removed 有权
标题翻译：去除生长衬底的基于氮化物的激光二极管的结构
公开(公告)号：US06757314B2
公开(公告)日：2004-06-29
申请号：US09276913
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
摘要翻译：描述了附着到导热基底的氮化物激光二极管阵列的结构，其中已经去除了蓝宝石生长衬底。导热衬底附着在蓝宝石生长衬底的相反侧。

74. 发明授权

US06595787B2 Low cost integrated out-of-plane micro-device structures and method of making 有权
公开(公告)号：US06595787B2
公开(公告)日：2003-07-22
申请号：US09780163
申请日：2001-02-09
申请人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
发明人： David K. Fork , Ping Mei , Koenraad F. Van Schuylenbergh
IPC分类号： H01R1200
CPC分类号： H01L27/08 , H01F17/0033 , H01F41/041 , H01L21/4853 , H01L23/5227 , H01L24/11 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13062 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H05K3/4092 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/49218 , H01L2924/00
摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the springs used to form out-of-plane structures are constrained via a tether to avoid bunching and entanglement. The high yield structure may be used in numerous electronic applications such as filter circuits.

75. 发明授权

US06586318B1 Thin phosphorus nitride film as an N-type doping source used in laser doping technology 有权
标题翻译：薄磷氮化膜作为激光掺杂技术中使用的N型掺杂源
公开(公告)号：US06586318B1
公开(公告)日：2003-07-01
申请号：US09473576
申请日：1999-12-28
申请人： Jeng Ping Lu , Ping Mei , James B. Boyce
发明人： Jeng Ping Lu , Ping Mei , James B. Boyce
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L21/2254 , H01L29/78669
摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.
摘要翻译：描述了用于激光掺杂半导体材料的改进的方法和系统。在本发明中，使用氮化磷作为掺杂剂源。使磷氮化物与要掺杂的半导体的区域紧密接近。激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

76. 发明授权

US6107641A Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage 失效
标题翻译：具有降低的寄生电容和降低的馈通电压的薄膜晶体管
公开(公告)号：US6107641A
公开(公告)日：2000-08-22
申请号：US927023
申请日：1997-09-10
申请人： Ping Mei , Rene A. Lujan , James B. Boyce , Christopher L. Chua , Michael G. Hack
发明人： Ping Mei , Rene A. Lujan , James B. Boyce , Christopher L. Chua , Michael G. Hack
IPC分类号： H01L21/223 , H01L21/225 , H01L21/266 , H01L21/336 , H01L27/144 , H01L27/146 , H01L29/786 , H01L31/0216 , H01L29/76
CPC分类号： H01L29/78696 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/2255 , H01L21/266 , H01L27/1443 , H01L27/14603 , H01L29/66757 , H01L29/66765 , H01L29/78669 , H01L31/02162 , H01L31/02165 , Y10S438/94
摘要： An improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser doping technique is applied to fabricate such transistors. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
摘要翻译：提供了不具有源极/栅极或漏极/栅极重叠的改进的薄膜晶体管结构。应用激光掺杂技术来制造这种晶体管。消除源极/栅极和漏极/栅极重叠显着降低或消除了源极和栅极之间的寄生电容和馈通电压。可以获得具有高场效应迁移率的短沟道a-Si：H薄膜晶体管。提供了改进的像素性能和像素到像素的均匀性。

77. 发明授权

US6031248A Hybrid sensor pixel architecture 失效
标题翻译：混合传感器像素架构
公开(公告)号：US6031248A
公开(公告)日：2000-02-29
申请号：US67657
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/46
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。

78. 发明授权

US5893948A Method for forming single silicon crystals using nucleation sites 失效
标题翻译：使用成核位点形成单晶硅晶体的方法
公开(公告)号：US5893948A
公开(公告)日：1999-04-13
申请号：US630955
申请日：1996-04-05
申请人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
发明人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
IPC分类号： H01L31/04 , C30B13/00 , H01L21/20 , H01L21/336 , H01L29/786 , C30B13/06
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/902
摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.
摘要翻译：本发明提供了一种在衬底上形成多个单晶硅晶体的方法。该方法在衬底上形成多个成核位点。在覆盖多个硅成核位置的衬底上形成非晶硅层。通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。多个单晶硅晶体中的每一个对应于多个成核位点中的一个。

79. 发明授权

US08269221B2 Structure and method for thin film device 有权
标题翻译：薄膜器件的结构和方法
公开(公告)号：US08269221B2
公开(公告)日：2012-09-18
申请号：US12011440
申请日：2008-01-24
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L29/786
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
摘要翻译：本发明提供一种制造薄膜器件的薄膜器件和相关方法。例如，在栅电极中具有纳米间隙的薄膜晶体管。该方法包括提供基底。然后在衬底上设置多个平行隔开的导电条。然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

80. 发明授权

US07341893B2 Structure and method for thin film device 有权
标题翻译：薄膜器件的结构和方法
公开(公告)号：US07341893B2
公开(公告)日：2008-03-11
申请号：US11144204
申请日：2005-06-02
申请人： Ping Mei , Albert Jeans , Carl Taussig
发明人： Ping Mei , Albert Jeans , Carl Taussig
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , H01L29/6675 , H01L29/78645 , H01L29/7869 , Y10S438/942
摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
摘要翻译：本发明提供一种制造薄膜器件的薄膜器件和相关方法。例如，在栅电极中具有纳米间隙的薄膜晶体管。该方法包括提供基底。然后在衬底上设置多个平行隔开的导电条。然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

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