会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 72. 发明授权
    • Paper container and stopper applying apparatus for paper containers
    • 用于纸容器的纸容器和塞子施加装置
    • US5516037A
    • 1996-05-14
    • US341945
    • 1994-11-16
    • Hidehiko OkamotoMasayo KajiuraMasataka OkushitaTakahisa Kato
    • Hidehiko OkamotoMasayo KajiuraMasataka OkushitaTakahisa Kato
    • B31B1/90B65D5/06B65D5/42
    • B65D5/068B31B2201/9019
    • A paper container according to the present invention includes a tab region half cut for defining a tab region of a shape whose lower part is closed and whose upper part is opened in the substantially central part of one of top folded-in side panels. A stopper is applied to an upper end of the tab region or near the upper end. The tab region is pulled from below after a pair of top folded-in side panels are separated apart, whereby a tab is formed, and the tab is pulled to split the seal between the top ribs and then the top folded-in ribs, and then the seal is opened. The tab region half cut is simply provided, and a stopper is simply provided for prohibiting breakage of the tab. The tab is not raised until the seal is opened, so that the tab does not interfere with manufacturing the container.
    • 根据本发明的纸容器包括用于限定其下部封闭的形状的突片区域的突片区域半切口,并且其上部在顶部折叠侧板的大致中心部分中开口。 止动器被施加到突片区域的上端或靠近上端。 在一对顶部折叠的侧面板分离开之后,从下方拉出突片区域,由此形成突片,并且拉伸突片以在顶部肋之间分离密封件,然后将顶部折叠肋条分开,并且 然后打开密封。 简单地提供突片区域半切口,并且简单地设置止动件以防止突片的破损。 在密封件打开之前,突片不会升起,使得突片不会妨碍制造容器。
    • 75. 发明申请
    • CHARGED PARTICLE BEAM LENS AND EXPOSURE APPARATUS USING THE SAME
    • 充电颗粒光束和曝光装置使用它
    • US20140197325A1
    • 2014-07-17
    • US14005078
    • 2012-03-14
    • Takahisa KatoYutaka Setomoto
    • Takahisa KatoYutaka Setomoto
    • H01J37/12H01J3/18
    • H01J37/12B82Y10/00B82Y40/00H01J3/18H01J37/3177H01J2237/04924H01J2237/1205H01J2237/1207
    • An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. When an opening cross section is defined as a cross section of the through-hole taken along a plane perpendicular to the normal line and a representative diameter is defined as a diameter of a circle obtained by performing regression analysis of the opening cross section, a representative diameter of the opening cross section in a first region that is on the first surface side and a representative diameter of the opening cross section in a second region that is on the second surface side are each larger than a representative diameter of the opening cross section in a third region that is a region in the electrode disposed between the first surface and the second surface.
    • 静电带电粒子束透镜包括:电极,其包括平板,该平板具有沿光轴方向延伸的法线的第一表面和与该第一表面相对的第二表面,该电极具有从第一表面延伸的通孔 表面到第二表面。 当开口横截面被定义为沿着垂直于法线的平面截取的通孔的横截面,并且代表性直径被定义为通过对开口横截面进行回归分析而获得的圆的直径时,代表 在第一表面侧的第一区域中的开口横截面的直径和位于第二表面侧的第二区域中的开口横截面的代表性直径分别大于开口横截面的代表性直径 第三区域,其是设置在第一表面和第二表面之间的电极中的区域。
    • 80. 发明授权
    • Silicon processing method and silicon substrate with etching mask
    • 硅处理方法和硅衬底与蚀刻掩模
    • US08324113B2
    • 2012-12-04
    • US12545235
    • 2009-08-21
    • Takahisa KatoYasuhiro Shimada
    • Takahisa KatoYasuhiro Shimada
    • H01L21/302
    • B81C1/00626B81B2201/0271B81C1/00404B81C2201/0133B81C2201/0198
    • A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width W1 and length L1. The principal plane includes a (100) surface and a crystal surface equivalent thereto or a (110) surface and a crystal surface equivalent thereto. A determining section for determining the width W1 of the structure is formed in the mask pattern. The width of the determining section for the width W1 of the mask pattern is width W2. The width of the mask pattern other than the determining section is larger than the width W2 over a length direction of the mask pattern.
    • 硅处理方法包括:在单晶硅衬底的主平面上形成掩模图案; 并对主表面施加结晶各向异性蚀刻,形成包括(111)表面和与其等效的晶面的结构,并具有宽度W1和长度L1。 主平面包括(100)表面和与其等效的(110)表面和与其等效的(110)表面和晶体表面。 用于确定结构的宽度W1的确定部分形成在掩模图案中。 掩模图案的宽度W1的确定部的宽度为宽度W2。 除了确定部分之外的掩模图案的宽度大于在掩模图案的长度方向上的宽度W2。