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71. 发明授权

US4954379A Information recording thin film and method for recording information 失效
标题翻译：信息记录薄膜和记录信息的方法
公开(公告)号：US4954379A
公开(公告)日：1990-09-04
申请号：US368060
申请日：1989-06-14
申请人： Tetsuya Nishida , Motoyasu Terao , Yasushi Miyauchi , Shinkichi Horigome
发明人： Tetsuya Nishida , Motoyasu Terao , Yasushi Miyauchi , Shinkichi Horigome
IPC分类号： B41M5/26 , B32B3/02 , G11B7/0045 , G11B7/24 , G11B7/243
CPC分类号： G11B7/00454 , G11B7/243 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/2571 , G11B2007/25713 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/256 , Y10S428/913 , Y10S430/146 , Y10T428/24917 , Y10T428/31678
摘要： An information recording thin film capable of changing an atomic configuration upon exposure to a recording beam, formed on a substrate directly or through a protective layer composed of at least one of inorganic materials and organic materials, an average composition in the film thickness direction of the information-recording thin film being represented by the following general formula;A.sub.X B.sub.Y C.sub.Z Ge.sub..alpha. Te.sub..beta.wherein X, Y, Z, .alpha. and .beta. are in ranges of 0.ltoreq.X
摘要翻译：一种信息记录薄膜，其能够在直接或通过由无机材料和有机材料中的至少一种构成的保护层的基板上形成于基板上而暴露于记录光束时改变原子构型，所述薄膜厚度方向的平均组成信息记录薄膜由以下通式表示： AXBYCZGeαTeβ其中X，Y，Z，α和β在0≤X<30,0≤Y≤30,0/ Z = 65,0， α为原子百分数，α为Sb，Sn，As，Pb，Bi，Zn，Cd中的至少一种元素，α

72. 发明授权

US4637976A Information recording member 失效
标题翻译：信息记录成员
公开(公告)号：US4637976A
公开(公告)日：1987-01-20
申请号：US642260
申请日：1984-08-20
申请人： Motoyasu Terao , Yasushi Miyauchi , Kazuo Shigematsu , Shinkichi Horigome
发明人： Motoyasu Terao , Yasushi Miyauchi , Kazuo Shigematsu , Shinkichi Horigome
IPC分类号： B41M5/26 , G11B7/0055 , G11B7/243 , G03C1/72 , G03C1/76
CPC分类号： G11B7/257 , G11B7/00557 , G11B7/243 , G11B2007/24316 , G11B2007/2432 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B7/2572 , Y10S430/146 , Y10S430/165
摘要： In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要翻译：在具有直接地或通过无机和有机保护层中的至少一个形成在基板上的数据记录膜的数据记录部件中，并且其在由记录光束照射时引起原子排列的改变，其中所述数据记录膜具有由下式表示的膜厚度方向上的平均组成：MxTeySezOα其中x，y，z和α是2≤x≤40,30≤y< / = 95,3 / z = 45,0 /α= 20，M为选自As，Sb，Bi，S，Si，Ge，Sn中的至少一种元素，Pb，Al，Ga，In，Tl，Zn，Cd，Au，Ag，Cu，Ni，Pd，Rh，Cr，Mo，W和Ta。

73. 发明授权

US06954941B2 Information recording medium and information recording device 失效
标题翻译：信息记录介质和信息记录装置
公开(公告)号：US06954941B2
公开(公告)日：2005-10-11
申请号：US10653161
申请日：2003-09-03
申请人： Makoto Miyamoto , Junko Ushiyama , Keikichi Ando , Yumiko Anzai , Akemi Hirotsune , Motoyasu Terao , Tetsuya Nishida , Yasushi Miyauchi , Mitsuhide Miyamoto
发明人： Makoto Miyamoto , Junko Ushiyama , Keikichi Ando , Yumiko Anzai , Akemi Hirotsune , Motoyasu Terao , Tetsuya Nishida , Yasushi Miyauchi , Mitsuhide Miyamoto
IPC分类号： G11B7/007 , G11B7/24 , G11B7/24079 , G11B7/243 , G11B7/253 , G11B7/2534 , G11B7/257 , G11B7/2578 , G11B11/105 , G11B5/84
CPC分类号： G11B7/2578 , G11B7/007 , G11B7/00718 , G11B7/24 , G11B7/24079 , G11B7/252 , G11B7/2534 , G11B11/10584 , G11B11/10586 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716 , G11B2007/25718
摘要： This invention relates to an information-recording medium that is used for recording information through radiation of energy beam. The information recording medium has a groove-shaped information recording track and is provided with a recording layer, one or more kinds of heat sink control layers and heat sink layers. A sum of film thickness of the more than one kind of recording layer is equal to or less than a step between information recording tracks, and a sum of film thickness of one or more kinds of heat sink control layers is more than a groove depth of the information recording track. With this configuration, no cross-erase is produced even if the information-recording medium is applied for a high density recording with the track pitch being 70% or less.
摘要翻译：本发明涉及一种用于通过能量束辐射记录信息的信息记录介质。信息记录介质具有凹槽状信息记录轨迹，并且设置有记录层，一种或多种散热器控制层和散热层。多于一种记录层的膜厚的总和等于或小于信息记录道之间的台阶，并且一种或多种散热器控制层的膜厚之和大于沟槽深度信息记录轨道。利用这种配置，即使将信息记录介质应用于轨道间距为70％或更小的高密度记录，也不产生交叉擦除。

74. 发明授权

US06650608B2 Information recording medium, information recording method and information recording apparatus 有权
公开(公告)号：US06650608B2
公开(公告)日：2003-11-18
申请号：US10293327
申请日：2002-11-14
申请人： Yasushi Miyauchi , Motoyasu Terao , Akemi Hirotsune , Hiroyuki Minemura , Harukazu Miyamoto
发明人： Yasushi Miyauchi , Motoyasu Terao , Akemi Hirotsune , Hiroyuki Minemura , Harukazu Miyamoto
IPC分类号： G11B700
CPC分类号： G11B7/126 , G11B7/00454 , G11B7/006 , G11B7/00745 , G11B7/013 , G11B7/24 , G11B20/1217 , G11B2020/10898 , G11B2020/1232 , G11B2020/1277 , G11B2020/1287 , G11B2020/1288 , G11B2020/1298 , G11B2220/216 , G11B2220/2537
摘要： A recording medium having a dummy signal area on at least one side of a recording area is used and information is recorded with a dummy signal added to at least one of the leading and trailing sides in the recorded information signal. The user data area remains unaffected by repeated overwriting so that recorded user data is reproduced correctly. In particular, the wave form distortion caused by fluidization of a recording film remains at the dummy signal area and does not affect the user data area, so that the reproduction of the target information (user data) is assured.

75. 发明授权

US06278680B1 Initial crystallization method of recording media and device thereof 有权
标题翻译：记录介质的初始结晶方法及其装置
公开(公告)号：US06278680B1
公开(公告)日：2001-08-21
申请号：US09275424
申请日：1999-03-24
申请人： Yasushi Miyauchi , Eiji Sahota , Shin Matsumoto , Kazuhiro Soga , Motoyasu Terao
发明人： Yasushi Miyauchi , Eiji Sahota , Shin Matsumoto , Kazuhiro Soga , Motoyasu Terao
IPC分类号： G11B712
CPC分类号： G11B7/268 , G11B7/00557 , G11B7/26
摘要： An initial crystallization method of a recording medium such as a phase-change optical disk, which comprises forming a light spot composed of at least two flat elliptical beam spots each having a long axis direction and a short axis direction and irradiating a rotating recording medium with the light spot such that the long axis direction of the beam spots becomes other direction than the parallel direction to the track direction of the recording medium, wherein the above-described light spot has at least two peaks of light intensity in the short axis direction and the interval of said two peaks of light intensity is 10 &mgr;m or smaller but not smaller than 2 &mgr;m, and a device for carrying out the initial crystallization method. By the initial crystallization method and the device thereof, the initial crystallization of the recording film of the recording medium can be surely carried out at a high speed without causing non-uniformity.
摘要翻译：一种诸如相变光盘的记录介质的初始结晶方法，包括形成由至少两个具有长轴方向和短轴方向的平坦椭圆形光束点组成的光斑，并且将旋转记录介质照射光斑使得光斑的长轴方向成为与记录介质的轨迹方向平行的方向以外的方向，其中上述光点在短轴方向上具有至少两个光强度的峰值，以及所述两个光强度峰值的间隔为10μm或更小但不小于2μm，以及用于进行初始结晶方法的装置。通过初始结晶方法及其装置，记录膜的初始结晶可以高速地可靠地进行记录介质，而不会引起不均匀。

76. 发明授权

US06232035B1 Information recording medium and information memory apparatus 失效
标题翻译：信息记录介质和信息存储装置
公开(公告)号：US06232035B1
公开(公告)日：2001-05-15
申请号：US09228943
申请日：1999-01-12
申请人： Akemi Hirotsune , Motoyasu Terao , Yasushi Miyauchi
发明人： Akemi Hirotsune , Motoyasu Terao , Yasushi Miyauchi
IPC分类号： G11B1100
CPC分类号： G11B7/243 , G11B7/24 , G11B7/2531 , G11B7/2534 , G11B7/258 , G11B2007/24306 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10S430/146
摘要： An information storage medium includes a substrate, a thin film formed on the substrate and having a reflectance changed by a phase change caused by irradiation of an energy beam irradiated via the substrate and a first reflective layer and a second reflective layer on the film directly or via an intermediate layer. The thin film includes one of In3SbTe2, In35Sb32Te33, In31Sb26Te43 and Ag—In—Sb—Te. The first reflective layer and the second reflective layer are piled up in the recited order from a thin film side with the first reflective layer consisting of a material having an attenuation factor k of 2 or less and selected from a group of silicon based materials and the second reflective layer consisting of a material having an attenuation factor k of at least 3.
摘要翻译：信息存储介质包括：基板，形成在基板上的薄膜，具有通过经由基板照射的能量束的照射引起的相位变化的反射率以及膜上的第一反射层和第二反射层直接或经由中间层。薄膜包括In3SbTe2，In35Sb32Te33，In31Sb26Te43和Ag-In-Sb-Te之一。第一反射层和第二反射层从薄膜一侧按顺序堆积，第一反射层由衰减因子k为2以下的材料组成，并选自硅基材料和第二反射层由衰减系数k至少为3的材料构成。

77. 发明授权

US5974023A Information recording medium, information recording method and information recording apparatus 有权
公开(公告)号：US5974023A
公开(公告)日：1999-10-26
申请号：US188370
申请日：1998-11-10
申请人： Yasushi Miyauchi , Motoyasu Terao , Akemi Hirotsune , Hiroyuki Minemura , Harukazu Miyamoto
发明人： Yasushi Miyauchi , Motoyasu Terao , Akemi Hirotsune , Hiroyuki Minemura , Harukazu Miyamoto
IPC分类号： G11B5/09 , G11B7/00 , G11B7/0045 , G11B7/006 , G11B7/007 , G11B7/013 , G11B7/125 , G11B7/24 , G11B20/12
CPC分类号： G11B7/126 , G11B20/1217 , G11B7/00454 , G11B7/006 , G11B7/00745 , G11B7/013 , G11B2020/10898 , G11B2020/1232 , G11B2020/1277 , G11B2020/1287 , G11B2020/1288 , G11B2020/1298 , G11B2220/216 , G11B2220/2537 , G11B7/24
摘要： A recording medium having a dummy signal area on at least one side of a recording area is used and information is recorded with a dummy signal added to at least one of the leading and trailing sides in the recorded information signal. The user data area remains unaffected by repeated overwriting so that recorded user data is reproduced correctly. In particular, the wave form distortion caused by fluidization of a recording film remains at the dummy signal area and does not affect the user data area, so that the reproduction of the target information (user data) is assured.

78. 发明授权

US5709978A Supperresolution readout thin film and information recording medium 失效
标题翻译：超分辨率读出薄膜和信息记录介质
公开(公告)号：US5709978A
公开(公告)日：1998-01-20
申请号：US261072
申请日：1994-06-16
申请人： Akemi Hirotsune , Motoyasu Terao , Yasushi Miyauchi
发明人： Akemi Hirotsune , Motoyasu Terao , Yasushi Miyauchi
IPC分类号： G11B7/24065 , G11B7/243 , G11B7/257 , G11B7/258 , G11B7/26 , G11B11/105 , G11B7/00 , G11B7/24
CPC分类号： G11B7/26 , G11B7/24065 , G11B7/243 , G11B7/257 , G11B11/10593 , G11B2007/24304 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B7/00557 , G11B7/258 , Y10S430/146
摘要： A recording film 3 of phase change type of Sb--Te--Ge system or Sb--Te--In system has at least one of lanthanoid elements and elements selected from among Ag, Ba, Co, Cr, Ni, Pt, Si, Sr, Au, Cd, Cu, Li, Mo, Mn, Zn, Al, Fe, Pb, Na, Cs, Ga, Pd, Bi, Sn, Ti, and V added thereto. A high melting point component 3b is precipitated in the recording film 3 to coexist with a phase change component 3a, thereby preventing the recording film 3 from flowing and segregating during recording and erasing. The recording film 3 can be made not as recording film, but as superresolution readout thin film to mask an optical disc recorded by ruggedness, an optical disc of phase change type, and a magneto-optical disc, thereby increasing number of possible superresolution readouts to a great extent.
摘要翻译： Sb-Te-Ge系或Sb-Te-In系的相变型记录膜3具有镧系元素和选自Ag，Ba，Co，Cr，Ni，Pt，Si，Sr， Au，Cd，Cu，Li，Mo，Mn，Zn，Al，Fe，Pb，Na，Cs，Ga，Pd，Bi，Sn，Ti和V。高熔点组分3b在记录膜3中析出，与相变组分3a共存，从而防止记录膜3在记录和擦除期间流动和分离。记录膜3可以不是记录膜，而是可以制成用于掩蔽由耐久性记录的光盘的超分辨率读出薄膜，相变型光盘和磁光盘，从而增加可能的超分辨率读出的数量在很大程度上

79. 发明授权

US4817053A Apparatus for storing and retrieving information using an electron beam 失效
标题翻译：用于使用电子束存储和检索信息的装置
公开(公告)号：US4817053A
公开(公告)日：1989-03-28
申请号：US71309
申请日：1987-07-09
申请人： Tadashi Ikeda , Kazuo Shigematsu , Yasushi Miyauchi , Motoyasu Terao , Tetsuya Nishida , Shinkichi Horigome , Norio Ohta , Ryo Suzuki
发明人： Tadashi Ikeda , Kazuo Shigematsu , Yasushi Miyauchi , Motoyasu Terao , Tetsuya Nishida , Shinkichi Horigome , Norio Ohta , Ryo Suzuki
IPC分类号： G11B9/10 , G11B9/12 , G11C13/00
CPC分类号： G11B9/10
摘要： An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.
摘要翻译：一种电子束存储系统，其中使用相变型记录膜作为信息记录介质，并且为了记录信息，聚焦的电子束被选择性地投影到记录膜的期望位置上，以便局部地加热记录膜并导致相位转移，而为了检索信息，投射具有不引起相变的程度的能量的电子束，以便利用在记录区域和未记录区域之间投影的一次电子束的反射或衍射不同的事实。

80. 发明授权

US4769311A Information recording member 失效
标题翻译：信息记录成员
公开(公告)号：US4769311A
公开(公告)日：1988-09-06
申请号：US884228
申请日：1986-07-10
申请人： Motoyasu Terao , Yasushi Miyauchi , Kazuo Shigematsu , Shinkichi Horigome
发明人： Motoyasu Terao , Yasushi Miyauchi , Kazuo Shigematsu , Shinkichi Horigome
IPC分类号： B41M5/26 , G11B7/0055 , G11B7/243 , G03C1/72 , G03C5/00
CPC分类号： G11B7/257 , G11B7/00557 , G11B7/243 , G11B2007/24316 , G11B2007/2432 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B7/2572 , Y10S430/146 , Y10S430/165
摘要： In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.

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