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    • 71. 发明授权
    • Switchable lens and method of making
    • 可切换镜头及其制作方法
    • US5751471A
    • 1998-05-12
    • US848848
    • 1997-05-02
    • Diana ChenWenbin JiangMichael S. Lebby
    • Diana ChenWenbin JiangMichael S. Lebby
    • G02F1/29
    • G02F1/29
    • A switchable lens includes first and second optically transparent substrates, a first electrically conductive, optically transparent contact film positioned on a surface of the first optically transparent substrate, a second electrically conductive, optically transparent contact film positioned on a surface of the second optically transparent substrate, and phase modulating material sandwiched between the first and second electrically conductive, optically transparent contact films. The phase modulating material has a lens function stored therein which is temporarily erasable by a potential applied between the first and second electrically conductive, optically transparent contact films, the phase modulating material thereby being capable of modulating light passing therethrough.
    • 可切换透镜包括第一和第二光学透明基板,位于第一光学透明基板的表面上的第一导电的光学透明的接触膜,位于第二光学透明基板的表面上的第二导电的光学透明的接触膜 以及夹在第一和第二导电的光学透明的接触膜之间的相位调制材料。 相位调制材料具有存储在其中的透镜功能,其通过施加在第一和第二导电的光学透明的接触膜之间的电位暂时可擦除,因此相位调制材料能够调制通过其中的光。
    • 73. 发明授权
    • Method of growing gallium nitride on a spinel substrate
    • 在尖晶石衬底上生长氮化镓的方法
    • US5741724A
    • 1998-04-21
    • US774819
    • 1996-12-27
    • Jamal RamdaniMichael S. LebbyPaige M. Holm
    • Jamal RamdaniMichael S. LebbyPaige M. Holm
    • C30B29/38H01L21/20H01L21/203H01L21/205H01L33/00
    • H01L33/007H01L21/0242H01L21/02458H01L21/02488H01L21/02505H01L21/0254Y10S438/967
    • A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.
    • 一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法,并且在支撑衬底的表面上设置多个缓冲层。 多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。 第二缓冲层设置在第一缓冲层上,并且包括具有低位错密度的多层梯度的氮氧化铝。 氮化铝的第三缓冲层设置在第二缓冲层上。 氮化镓的第四缓冲层设置在第三缓冲层上。 随后,在第四缓冲层上制造诸如激光,LED或检测器之类的光子器件结构,诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。
    • 75. 发明授权
    • Integrated electro-optic package for reflective spatial light modulators
    • 用于反射空间光调制器的集成电光封装
    • US5703664A
    • 1997-12-30
    • US553737
    • 1995-10-23
    • Karen E. JachimowiczGeorge R. KellyMichael S. Lebby
    • Karen E. JachimowiczGeorge R. KellyMichael S. Lebby
    • G02F1/13G02F1/1333
    • G02F1/133308
    • An array of reflective LCSLM pixels formed on a substrate with a light polarizing layer positioned between the array and a light source. An overmolded housing defining an optical waveguide having a light input, a light output, and a mirrored surface directing light from the input toward the output, the polarizing layer being mounted to allow light passing into the optical waveguide to pass therethrough. The light source provided to direct light through the polarizing layer and evenly illuminate the array. Light reflected from the array is directed onto the mirrored surface of the optical waveguide. A diffuser at the output forms an image plane for the reflected light. Electrical connections are made from the array to a circuit board on which it is mounted. All components are encapsulated by the overmolded housing, having leads formed in the housing to provide external contacts.
    • 形成在基板上的反射LCSLM像素阵列,其中位于阵列和光源之间的光偏振层。 一种包覆模制的壳体,其限定具有光输入,光输出和将光从输入引向输出的反射表面的光波导,所述偏振层被安装成允许通过光波导的光通过。 光源被提供以引导光通过偏振层并均匀地照亮阵列。 从阵列反射的光被引导到光波导的镜面上。 输出处的漫射器形成反射光的像平面。 电气连接由阵列制成安装在其上的电路板。 所有组件都被包覆模制的外壳封装,其中形成在壳体中的引线以提供外部触点。
    • 78. 发明授权
    • Broad spectrum surface-emitting led
    • 广谱表面发射LED
    • US5563900A
    • 1996-10-08
    • US287820
    • 1994-08-09
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • H01S5/183H01S5/40H01S3/18H01S3/103
    • H01S5/18397H01S5/1057H01S5/18308H01S5/18358H01S5/18361H01S5/2063
    • A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.
    • 具有半导体衬底的表面发射发光器件,位于衬底表面上的半导体反射镜叠层,位于反射镜叠层上的间隔层,位于间隔层上的有源区,位于有源区上的第二间隔层, 位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。 有源区包括多个量子阱,每个量子阱具有不同的跃迁波长并且位于间隔层上,其中量子阱具有位于最靠近间隔层的最长过渡波长,并且多个量子阱的额外量子阱按照降低的跃迁波长 使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。
    • 79. 发明授权
    • Vertical cavity surface emitting laser having continuous grading
    • 具有连续分级的垂直腔表面发射激光
    • US5530715A
    • 1996-06-25
    • US346559
    • 1994-11-29
    • Chan-Long ShiehMichael S. LebbyHsing-Chung LeePiotr Grodzinski
    • Chan-Long ShiehMichael S. LebbyHsing-Chung LeePiotr Grodzinski
    • H01S5/00H01S5/183H01S3/08
    • H01S5/183B82Y20/00H01S5/3054H01S5/3215H01S5/34313
    • A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
    • 具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上,其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝 从交替层之一到另一个交替层的浓度。 第一包层区域布置在分布布拉格反射镜的第一堆叠上。 有源区设置在第一包层区上,第二包层区设置在有源区上。 具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上,第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从 另一个交替层的改变层之一。