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71. 发明授权

US06645287B2 Coating compositions comprising high t-area carbon products 有权
标题翻译：包含高t面积碳产品的涂料组合物
公开(公告)号：US06645287B2
公开(公告)日：2003-11-11
申请号：US09844940
申请日：2001-04-27
申请人： Lang H. Nguyen , Thomas E. McElwain , Samuel N. Shields, Jr. , John F. Nagel , David D. Smith , Jameel Menashi
发明人： Lang H. Nguyen , Thomas E. McElwain , Samuel N. Shields, Jr. , John F. Nagel , David D. Smith , Jameel Menashi
IPC分类号： C09C144
CPC分类号： C09C1/56 , C01P2006/12 , C01P2006/19 , C01P2006/62 , C01P2006/63 , C01P2006/64 , C08K3/04 , C08K9/04 , C09D7/62
摘要： The present invention discloses coating compositions comprising a liquid vehicle and a carbon product having a t-area greater than or equal to 400 m2/g. In addition, the present invention discloses coating compositions comprising a liquid vehicle and a modified carbon product having a t-area greater than or equal to 350 m2/g, wherein the modified carbon product comprises a carbon product having attached at least one organic group.
摘要翻译：本发明公开了包含液体载体和t-面积大于或等于400m 2 / g的碳产品的涂料组合物。此外，本发明公开了包含液体载体和t-面积大于或等于350m 2 / g的改性碳产品的涂料组合物，其中所述改性碳产品包含附着至少一种有机组。

72. 发明授权

US06441920B1 System and method for output management 有权
标题翻译：输出管理系统和方法
公开(公告)号：US06441920B1
公开(公告)日：2002-08-27
申请号：US09246646
申请日：1999-02-08
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： G06F312
CPC分类号： B41B19/00 , G06F3/1213 , G06F3/1247 , G06F3/1285 , G06K15/02 , G06K2215/0071 , G06K2215/0082 , H04N1/00204 , H04N1/00236 , H04N1/00238 , H04N1/32561 , H04N2201/0067 , H04N2201/0082 , H04N2201/33328 , H04N2201/33378
摘要： An output manager that is included in a prepress workflow between a raster image processor and an output device generates a print production format file. The file is created by defining an output device and a press, and configuring a press profile in response to the output device and the press. The output manager receives a reduced resolution image, modifies the reduced resolution image responsive to the press profile, and stores the modified reduced resolution image in a print production file according to the CIP3 format.
摘要翻译：包括在光栅图像处理器和输出设备之间的印前工作流程中的输出管理器生成打印生产格式文件。该文件是通过定义输出设备和印刷机来创建的，并且根据输出设备和印刷机配置印刷机配置文件。输出管理器接收缩小的分辨率图像，并根据印刷机轮廓修改降低分辨率的图像，并根据CIP3格式将经修改的缩小分辨率图像存储在打印制作文件中。

73. 发明授权

US5400326A Network bridge 失效
标题翻译：网桥
公开(公告)号：US5400326A
公开(公告)日：1995-03-21
申请号：US178373
申请日：1993-12-22
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H04L12/46 , H04L12/54
CPC分类号： H04L12/46
摘要： A bridge for interconnecting data networks includes an adapter connected to each network and a central programmed processor. Each adapter includes a receive and a transmit FIFO storage which is less than the packets being transferred from one network to the other. The control program generates Receive Buffer Descriptors which include buffer pointers, buffer length fields and pointers to next descriptors. These Descriptors are used by the adapters to buffer received packets which are directed to another network. When a packet is buffered the control program generates Transmission Descriptors which are used by the adapter to transfer packet data to the other network. The control program modifies packet when needed by by generating and storing in its memory only the modified portion and including in the Receive Buffer Descriptor pointers which the buffered information which is to be transmitted and the sequence.
摘要翻译：用于互连数据网络的桥接器包括连接到每个网络的适配器和中央编程处理器。每个适配器包括接收和发送FIFO存储器，其小于从一个网络传输到另一个网络的数据包。控制程序产生接收缓冲区描述符，其包括缓冲区指针，缓冲区长度字段和下一个描述符的指针。适配器使用这些描述符来缓冲指向另一个网络的接收到的数据包。当数据包被缓冲时，控制程序产生传输描述符，适配器使用该描述符将数据包数据传输到另一个网络。当需要时，控制程序通过在其存储器中仅生成和存储修改的部分并且在接收缓冲器描述符指针中包含要发送的缓冲信息和序列来修改分组。

74. 发明授权

US09627566B2 Foil-based metallization of solar cells 有权
公开(公告)号：US09627566B2
公开(公告)日：2017-04-18
申请号：US14954030
申请日：2015-11-30
申请人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/0236 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

75. 发明授权

US09502601B1 Metallization of solar cells with differentiated P-type and N-type region architectures 有权
标题翻译：具有差异化P型和N型区域结构的太阳能电池的金属化
公开(公告)号：US09502601B1
公开(公告)日：2016-11-22
申请号：US15089382
申请日：2016-04-01
申请人： David D. Smith , Timothy Weidman , Scott Harrington , Venkatasubramani Balu
发明人： David D. Smith , Timothy Weidman , Scott Harrington , Venkatasubramani Balu
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/028 , H01L31/0216 , H01L31/0236
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/035281 , H01L31/0745 , Y02E10/50
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.
摘要翻译：描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。在一个示例中，背接触太阳能电池可以包括具有光接收表面和背面的基板。第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。第三薄介电层设置在第一多晶硅发射极区域的暴露的外部部分上，并且横向地设置在第一和第二多晶硅发射极区域之间。第一导电接触结构设置在第一多晶硅发射极区域上。第二导电接触结构设置在第二多晶硅发射极区域上。还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

76. 发明申请

US20160079450A1 FOIL-BASED METALLIZATION OF SOLAR CELLS 有权
公开(公告)号：US20160079450A1
公开(公告)日：2016-03-17
申请号：US14954030
申请日：2015-11-30
申请人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

77. 发明申请

US20150179847A1 BUILT-IN BYPASS DIODE 审中-公开
标题翻译：内置旁路二极管
公开(公告)号：US20150179847A1
公开(公告)日：2015-06-25
申请号：US14136719
申请日：2013-12-20
申请人： Seung Bum Rim , David D. Smith
发明人： Seung Bum Rim , David D. Smith
IPC分类号： H01L31/042 , H01L31/102 , H01L31/18
CPC分类号： H01L31/02167 , H01L27/1421 , H01L31/022441 , H01L31/0443 , H01L31/0745 , Y02E10/50
摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
摘要翻译：旁路二极管可以包括设置在太阳能电池的衬底上方的第一导电类型的第一导电区域和设置在第一导电区域上方的第二导电类型的第二导电区域。旁路二极管可以包括直接设置在第一和第二导电区域之间的薄介电区域。

78. 发明申请

US20140295609A1 SOLAR CELL EMITTER REGION FABRICATION USING SILICON NANO-PARTICLES 有权
公开(公告)号：US20140295609A1
公开(公告)日：2014-10-02
申请号：US14303273
申请日：2014-06-12
申请人： Paul Loscutoff , David D. Smith , Michael Morse , Ann Waldhauer , Taeseok Kim , Steven Edward Molesa
发明人： Paul Loscutoff , David D. Smith , Michael Morse , Ann Waldhauer , Taeseok Kim , Steven Edward Molesa
IPC分类号： H01L31/18 , H01L31/0352 , H01L31/028
CPC分类号： H01L31/182 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0352 , H01L31/035281 , H01L31/03682 , H01L31/03845 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/50 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S977/939 , Y10S977/948
摘要： Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

79. 发明授权

US08679889B2 Hybrid polysilicon heterojunction back contact cell 有权
标题翻译：混合多晶异质结接触电池
公开(公告)号：US08679889B2
公开(公告)日：2014-03-25
申请号：US13333908
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
摘要翻译：公开了一种制造高效太阳能电池的方法。该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。镀金属指可以形成第一金属网格线。可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

80. 发明授权

US08597970B2 Hybrid polysilicon heterojunction back contact cell 有权
公开(公告)号：US08597970B2
公开(公告)日：2013-12-03
申请号：US13333904
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

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