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71. 发明授权

US07447055B2 Multiplexer interface to a nanoscale-crossbar 有权
标题翻译：多路复用器接口到纳米级交叉开关
公开(公告)号：US07447055B2
公开(公告)日：2008-11-04
申请号：US11112085
申请日：2005-04-22
申请人： Philip J. Kuekes , R. Stanley Williams
发明人： Philip J. Kuekes , R. Stanley Williams
IPC分类号： G11C11/00
CPC分类号： G11C8/10 , B82Y10/00 , G11C13/0023 , G11C13/02 , G11C2213/77 , G11C2213/81 , Y10S977/938
摘要： Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or sub-microscale signal line is interconnected with one set of parallel nanowires emanating from a nanowire-crossbar memory by configurable, nanowire-junction switches. The microscale or sub-microscale signal line serves as a single-wire multiplexer, allowing the contents of any particular single-bit storage element within the nanowire-crossbar memory to be read in a three-cycle READ operation.
摘要翻译：本发明的各种实施例涉及用于读取纳米线交叉存储器的内容的电子装置。在本发明的一个实施例中，微米级或亚微米级信号线与通过可配置的纳米线结开关从纳米线交叉存储器发出的一组平行纳米线互连。微尺度或亚微米级信号线用作单线多路复用器，允许在三循环读取操作中读取纳米线交叉存储器内的任何特定单位存储元件的内容。

72. 发明授权

US07350132B2 Nanoscale interconnection interface 有权
标题翻译：纳米级互连接口
公开(公告)号：US07350132B2
公开(公告)日：2008-03-25
申请号：US11115887
申请日：2005-04-26
申请人： Philip J. Kuekes , J. Warren Robinett , Gadiel Seroussi , R. Stanley Williams
发明人： Philip J. Kuekes , J. Warren Robinett , Gadiel Seroussi , R. Stanley Williams
IPC分类号： H03M10/00
CPC分类号： G11C13/0023 , B82Y10/00 , G06F11/1016 , G11C8/10 , G11C11/54 , G11C13/0002 , G11C2213/77 , G11C2213/81
摘要： One embodiment of the present invention provides a demultiplexer implemented as a nanowire crossbar or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines to 2k or fewer nanowires, employing supplemental, internal address lines to map 2k nanowire addresses to a larger, internal, n-bit address space, where n>k. A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2k nanowires, with n>k, using 2k, well-distributed, n-bit external addresses to access the 2k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire addresses to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.
摘要翻译：本发明的一个实施例提供了一种解复用器，其实现为纳米线交叉开关或具有电阻器状纳米线结的混合纳米线/微型信号线交叉开关。一个实施例的解复用器提供了在k个微米地址线上输入的信号到2k或更少的纳米线的解复用，使用补充的内部地址线将2nm的纳米线地址映射到较大的内部n位地址空间，其中n> k。本发明的第二解复用器实施例提供了在n个微米级地址线上输入的信号，其中n≥k，使用2分布良好的二极管， n位外部地址以访问2nm的纳米线。本发明的另外的实施例包括用于评估纳米线地址与不同大小的内部地址空间的不同映射的方法，或者评估纳米线与不同大小的外部地址空间的映射，用于评估地址映射和解复用器设计的度量，以及解复用器设计方法。

73. 发明授权

US07242199B2 Active interconnects and control points in integrated circuits 有权
标题翻译：集成电路中的有源互连和控制点
公开(公告)号：US07242199B2
公开(公告)日：2007-07-10
申请号：US11112795
申请日：2005-04-21
申请人： R. Stanley Williams , Philip J Kuekes , Frederick A. Perner , Greg Snider , Duncan Stewart
发明人： R. Stanley Williams , Philip J Kuekes , Frederick A. Perner , Greg Snider , Duncan Stewart
IPC分类号： G01R27/08
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors are introduced at the interconnect layer of integrated circuits in order to provide a for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronic characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains.
摘要翻译：在本发明的各种实施例中，在集成电路的互连层处引入可调电阻器，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或者在制造之后配置集成电路。例如，当诸如晶体管的某些内部组件由于制造缺陷而没有指定的电子特性时，可以使用根据本发明的实施例的集成电路的互连层中包括的可调谐电阻的可变电阻的调整以调整内部电压和/或电平以便改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。

74. 发明授权

US07560726B2 Quantum information processing using electromagnetically induced transparency 有权
标题翻译：使用电磁感应透明度的量子信息处理
公开(公告)号：US07560726B2
公开(公告)日：2009-07-14
申请号：US10364987
申请日：2003-02-11
申请人： Raymond G. Beausoleil , Adrian P. Kent , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams
发明人： Raymond G. Beausoleil , Adrian P. Kent , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams
IPC分类号： H01J40/14
CPC分类号： B82Y10/00 , G06N99/002
摘要： Quantum information processing structures and methods use photons and four-level matter systems in electromagnetically induced transparency (EIT) arrangements for one and two-qubit quantum gates, two-photon phase shifters, and Bell state measurement devices. For efficient coupling of the matter systems to the photons while decoupling the matter systems from the phonon bath, molecular cages or molecular tethers maintain the atoms within the electromagnetic field of the photon, e.g., in the evanescent field surrounding the core of an optical fiber carrying the photons. To reduce decoherence caused by spontaneous emissions, the matter systems can be embedded in photonic bandgap crystals or the matter systems can be selected to include metastable energy levels.
摘要翻译：量子信息处理结构和方法使用光子和四级物质系统在一个和两个量子位量子门，双光子移相器和贝尔状态测量装置的电磁感应透明度（EIT）布置中。为了将物质系统有效耦合到光子，同时将物质系统与声子浴解耦，分子笼或分子系链将原子保持在光子的电磁场内，例如在包含光纤的纤芯的周围的消逝场中光子。为了减少由自发辐射引起的去相干，物质系统可以嵌入光子带隙晶体中，或者可以选择物质系统来包括亚稳态能级。

75. 发明授权

US07030408B1 Molecular wire transistor (MWT) 失效
公开(公告)号：US07030408B1
公开(公告)日：2006-04-18
申请号：US09699080
申请日：2000-10-26
申请人： Philip J. Kuekes , R. Stanley Williams
发明人： Philip J. Kuekes , R. Stanley Williams
IPC分类号： H01L35/24
CPC分类号： H01L27/285 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C13/0014 , G11C13/02 , G11C2213/17 , G11C2213/77 , G11C2213/81 , H01L29/167 , H01L29/73 , H01L51/0595 , Y10S977/762 , Y10S977/936
摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.

76. 发明授权

US06903366B2 Chemically synthesized and assembled electronic devices 失效
标题翻译：化学合成和组装电子器件
公开(公告)号：US06903366B2
公开(公告)日：2005-06-07
申请号：US10699172
申请日：2003-10-31
申请人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
发明人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
IPC分类号： B81B7/04 , B82B1/00 , G01R31/28 , G11C13/02 , H01L21/00 , H01L23/532 , H01L27/10 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/06
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译：提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。本发明能够通过直接且廉价的化学组装程序在长度尺度上构建分子电子器件，其尺寸范围可以从微米到纳米。该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。

77. 发明授权

US06559468B1 Molecular wire transistor (MWT) 失效
标题翻译：分子线晶体管（MWT）
公开(公告)号：US06559468B1
公开(公告)日：2003-05-06
申请号：US09699269
申请日：2000-10-26
申请人： Philip J. Kuekes , R. Stanley Williams
发明人： Philip J. Kuekes , R. Stanley Williams
IPC分类号： H01L2906
CPC分类号： H01L27/285 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C13/0014 , G11C13/02 , G11C2213/17 , G11C2213/77 , G11C2213/81 , H01L29/167 , H01L29/73 , H01L51/0595 , Y10S977/762 , Y10S977/936
摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.
摘要翻译：提供双极和场效应分子线晶体管。分子线晶体管包括一对交叉导线，其中至少一根导线包括掺杂的半导体材料。一对交叉线形成一条线交叉另一条线的连接处，一条线路上设有路易斯酸官能团，另一条线路上设有路易斯碱官能团。如果两根导线都是诸如硅的掺杂半导体，则一个是P掺杂的，另一个是N掺杂的。给定掺杂的一条导线包括发射极和集电极部分，另一条导线包括基部，该基部通过在包含发射极和集电极的导线上的调制掺杂形成，其中导线交叉并且在发射极和集电极部分之间，从而形成双极晶体管。可以形成NPN和PNP双极晶体管。类似地，一条导线可以包括诸如硅的掺杂半导体，而另一条导线是金属，形成源极和漏极的掺杂硅线和金属线通过在掺杂的硅线上的调制掺杂形成栅极，其中电线交叉，源极和漏极，形成场效应晶体管。可以形成P沟道和N沟道FET。因此能够实现自对准和调制掺杂的纳米尺度的双极晶体管和FET的构造。

78. 发明授权

US06459095B1 Chemically synthesized and assembled electronics devices 失效
标题翻译：化学合成和组装的电子器件
公开(公告)号：US06459095B1
公开(公告)日：2002-10-01
申请号：US09282048
申请日：1999-03-29
申请人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
发明人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
IPC分类号： H01L2906
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译：提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。本发明能够通过直接且廉价的化学组装程序在比例范围从微米到纳米的范围内构建分子电子器件。该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。

79. 发明授权

US06314019B1 Molecular-wire crossbar interconnect (MWCI) for signal routing and communications 失效
标题翻译：用于信号路由和通信的分子线交叉互连（MWCI）
公开(公告)号：US06314019B1
公开(公告)日：2001-11-06
申请号：US09280225
申请日：1999-03-29
申请人： Philip J. Kuekes , R. Stanley Williams , James R. Heath
发明人： Philip J. Kuekes , R. Stanley Williams , James R. Heath
IPC分类号： G11C1100
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0009 , G11C2213/34 , G11C2213/77 , G11C2213/81 , Y10S977/708 , Y10S977/762 , Y10S977/765 , Y10S977/936
摘要： A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
摘要翻译：提供了用于分子线交叉开关中的信号路由和第一级和第二级之间的通信的分子线交叉开关互连。分子线交叉杆包括多个纳米级开关的二维阵列。每个开关是可重构和自组装的，并且包括一对交叉线，其形成一条线与另一条线交叉的连接处，以及至少一个在连接处连接一对交叉线的连接器种类。连接器种类包括双稳态分子。每个级别包括至少一组交换机，并且每组交换机包括至少一个交换机，其中第一级别中的每个组以全对齐配置连接到第二级别中的所有其他组，以提供可扩展的缺陷不容忍，胖树联网方案。主要优点是易于制造，因为在任何时候两根线交叉时形成有源开关。由于不需要其他电线或辅助设备来操作交换机或存储所需的配置，因此可大大节省电路面积（十倍）。配置位区域的这种减少及其切换到两条交叉电线的区域是构建容错互连网络的主要优点。

80. 发明授权

US08384136B2 Demultiplexed nanowire sensor array for detection of chemical and biological species 有权
标题翻译：用于检测化学和生物物种的多路复用纳米线传感器阵列
公开(公告)号：US08384136B2
公开(公告)日：2013-02-26
申请号：US11584028
申请日：2006-10-19
申请人： R. Stanley Williams , Philip J. Kuekes , Yong Chen
发明人： R. Stanley Williams , Philip J. Kuekes , Yong Chen
IPC分类号： G01R19/00
CPC分类号： G01N27/4145 , G01N27/4146
摘要： A demultiplexed nanowire sensor array for detecting different chemical and biological species are provided, comprising a sensor array and a demultiplexer array. Methods of detecting at least two chemical and/or biological species are also provided, using the demultiplexed nanowire sensor array.
摘要翻译：提供了用于检测不同化学和生物物种的解复用的纳米线传感器阵列，其包括传感器阵列和解复用器阵列。还使用解复用的纳米线传感器阵列来提供检测至少两种化学和/或生物物种的方法。

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