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71. 发明申请

US20050106387A1 Waterproofing and airtight pressure-sensitive adhesive tape 有权
标题翻译：防水密封胶带
公开(公告)号：US20050106387A1
公开(公告)日：2005-05-19
申请号：US10969070
申请日：2004-10-21
申请人： Masayuki Ishikawa , Sadayuki Inagaki , Yasunori Munakata
发明人： Masayuki Ishikawa , Sadayuki Inagaki , Yasunori Munakata
IPC分类号： B32B7/12 , B32B25/00 , C08K3/04 , C08K3/26 , C08L23/22 , C09J7/02 , C09J123/16 , C09J133/06 , B32B9/00
CPC分类号： B32B7/12 , B32B25/00 , B32B25/08 , B32B25/14 , B32B25/16 , B32B25/18 , B32B27/308 , B32B2405/00 , C08K3/04 , C08K3/26 , C08L23/22 , C08L2666/06 , C09J7/29 , C09J123/16 , C09J2201/162 , C09J2421/006 , Y10T428/28 , Y10T428/2835 , Y10T428/2848
摘要： The waterproofing and airtight pressure-sensitive adhesive tape is a pressure-sensitive adhesive tape containing a substrate having a pressure-sensitive adhesive layer on one side thereof, wherein the substrate is a rubber-made sheet; a film layer having non-self-adhesive properties and adhesive properties to the pressure-sensitive adhesive layer is formed on the substrate in the side opposite to the pressure-sensitive adhesive layer; and the waterproofing and airtight pressure-sensitive adhesive tape has an elongation at break (distance between two gage marks: 40 mm, drawing rate: 300 mm/min) of from 200 to 1,200% in both the longitudinal direction and the cross direction and a stress under 100% elongation (distance between two gage marks: 40 mm, drawing rate: 50 mm/min) of from 10 to 100 N/cm2 in both the longitudinal direction and the cross direction.
摘要翻译：防水密封胶带是含有在其一侧具有压敏粘合剂层的基材的压敏粘合带，其中基材是橡胶制的片; 在与压敏粘合剂层相反的一侧的基板上形成对粘合剂层具有非自粘性和粘合性的膜层; 防水密封胶带在长度方向和横向方向上具有200-1200％的断裂伸长率（两个标距之间的距离：40mm，拉伸速度：300mm / min）和在纵向方向和横向方向上的100％伸长率（两个标距之间的距离：40mm，拉伸速率：50mm / min）的应力为10至100N / cm 2。

72. 发明申请

US20050090679A1 Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds 有权
标题翻译：钌化合物，其制备方法和使用该化合物制成的含钌薄膜
公开(公告)号：US20050090679A1
公开(公告)日：2005-04-28
申请号：US10499822
申请日：2003-01-08
申请人： Hideyuki Hirakoso , Masayuki Ishikawa , Akio Yanagisawa , Katsumi Ogi
发明人： Hideyuki Hirakoso , Masayuki Ishikawa , Akio Yanagisawa , Katsumi Ogi
IPC分类号： C07F17/02 , C23C16/18 , C23C16/44
CPC分类号： C23C16/18 , C07F17/02 , C23C16/4402
摘要： Bis(cyclopentadienyl)ruthenium complex havimg a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5 ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100 ppm of rhenium The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium-containing thin film.
摘要翻译：双（环戊二烯基）钌络合物含有选自钠，钾，钙，铁，镍和锌中的至少一种成分的含量为5ppm以下; 和掺有10〜100ppm铼的双（环戊二烯基）钌络合物。该络合物适用于金属有机化学气相沉积（MOCVD），并可提供含钌薄膜。

73. 发明授权

US06873634B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US06873634B2
公开(公告)日：2005-03-29
申请号：US09964463
申请日：2001-09-28
申请人： Masaaki Onomura , Mariko Suzuki , Masayuki Ishikawa
发明人： Masaaki Onomura , Mariko Suzuki , Masayuki Ishikawa
IPC分类号： H01S5/00 , H01S5/02 , H01S5/20 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/0655 , H01S5/2004 , H01S5/34333
摘要： The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.
摘要翻译：本发明提供一种氮化物半导体激光器，通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。一种半导体激光二极管，包括：GaN层; 形成在所述GaN层上并由Al x Ga 1-x N（0.04 <= x <= 0.08）制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区，所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。

74. 发明授权

US06758597B2 Bearing member and method for manufacturing the same and dynamic pressure bearing device 有权
标题翻译：轴承构件和制造相同动态压力承载装置的方法
公开(公告)号：US06758597B2
公开(公告)日：2004-07-06
申请号：US09931651
申请日：2001-08-15
申请人： Takayuki Narita , Hiromasa Marumo , Masayuki Ishikawa
发明人： Takayuki Narita , Hiromasa Marumo , Masayuki Ishikawa
IPC分类号： F16C3206
CPC分类号： G11B19/2009 , F16C17/026 , F16C33/10 , F16C33/1035 , F16C33/107 , F16C33/12 , F16C2370/12
摘要： A bearing member and a dynamic pressure bearing device using the bearing member includes a cylindrical body constituting a bearing member that rotatably supports a shaft member. The cylindrical body is made of a copper metal, and an anti-rust film comprising cupric benzotriazole is formed on the surface of the cylindrical body.
摘要翻译：使用该轴承构件的轴承构件和动压轴承装置包括构成可旋转地支撑轴构件的轴承构件的圆筒体。圆柱体由铜金属制成，并且在圆筒体的表面上形成包含二氧化苯并三唑的防锈膜。

75. 发明授权

US06720583B2 Optical device, surface emitting type device and method for manufacturing the same 有权
公开(公告)号：US06720583B2
公开(公告)日：2004-04-13
申请号：US09956084
申请日：2001-09-20
申请人： Shin-Ya Nunoue , Masayuki Ishikawa
发明人： Shin-Ya Nunoue , Masayuki Ishikawa
IPC分类号： H01L2922
CPC分类号： H01L33/105 , B82Y20/00 , G02B6/4214 , H01L33/46 , H01L33/465 , H01S5/18308 , H01S5/18341 , H01S5/1835 , H01S5/18361 , H01S5/18363 , H01S5/209 , H01S5/34333 , H01S2304/04
摘要： The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

76. 发明授权

US06651310B1 Method of manufacturing aluminum rotor and motor incorporating the same 失效
标题翻译：制造铝合金转子和电动机的方法
公开(公告)号：US06651310B1
公开(公告)日：2003-11-25
申请号：US09511270
申请日：2000-02-23
申请人： Masayuki Ishikawa
发明人： Masayuki Ishikawa
IPC分类号： H02K1510
CPC分类号： H02K15/02 , C11D11/0041 , C23G1/00 , C23G1/22 , Y10T29/49009 , Y10T29/49012 , Y10T29/53143
摘要： A method of manufacturing an aluminum rotor and motor incorporating the rotor where after a solvent cleaning step of a rotator body using a chlorine-family solvent, an alkaline degreasing step using an alkaline degreasing agent is executed for cleaning the rotator body, and the rotator body after undergoing the solvent cleaning step is simply immersed in a treatment tank storing an alkaline degreasing agent, whereby the chlorine-family solvent remaining on the rotator body or aluminum chloride produced by the chlorine-family solvent reacting with aluminum material reacts with the alkaline degreasing agent and is removed easily and well.
摘要翻译：一种制造包含转子的铝转子和电动机的方法，其中在使用氯族溶剂的旋转体的溶剂清洗步骤之后，执行使用碱性脱脂剂的碱性脱脂步骤以清洁转子体，并且转子体在进行溶剂清洗工序后，简单地将其浸渍在储存碱性脱脂剂的处理槽中，残留在旋转体上的氯族溶剂或氯系溶剂与铝材料反应生成的氯化铝与碱性脱脂剂并且容易和清除地被去除。

77. 发明授权

US06586874B1 Image display device and light emission device 失效
公开(公告)号：US06586874B1
公开(公告)日：2003-07-01
申请号：US09080300
申请日：1998-05-18
申请人： Satoshi Komoto , Masayuki Ishikawa , Tadashi Umeji , Kuniaki Konno , Koichi Nitta , Haruhiko Okazaki
发明人： Satoshi Komoto , Masayuki Ishikawa , Tadashi Umeji , Kuniaki Konno , Koichi Nitta , Haruhiko Okazaki
IPC分类号： H01J162
CPC分类号： H01L33/505 , G02B6/0023 , G02B6/0025 , G02B6/003 , G02B6/0035 , G02B6/0046 , G02B6/0051 , G02B6/0055 , G02B6/0068 , G02B6/0073 , G02F1/1334 , G02F1/133603 , G02F1/133605 , G02F1/133617 , G02F1/13725 , G02F2001/133613 , G02F2001/133614 , G02F2203/34 , H01L25/0753 , H01L25/0756 , H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/49113 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H04N9/315 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

78. 发明授权

US06242761B1 Nitride compound semiconductor light emitting device 失效
标题翻译：氮化物半导体发光元件
公开(公告)号：US06242761B1
公开(公告)日：2001-06-05
申请号：US09026941
申请日：1998-02-20
申请人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
发明人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
IPC分类号： H01L2972
CPC分类号： H01L33/145 , H01L33/32 , H01S5/2205 , H01S5/2206 , H01S5/2214 , H01S5/2226 , H01S5/2231 , H01S5/32341
摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.
摘要翻译：为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

79. 发明授权

US5930656A Method of fabricating a compound semiconductor device 失效
标题翻译：制造化合物半导体器件的方法
公开(公告)号：US5930656A
公开(公告)日：1999-07-27
申请号：US953639
申请日：1997-10-17
申请人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
发明人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
IPC分类号： C30B25/02 , H01L21/205 , H01L33/00 , H01L33/44 , H01L21/31
CPC分类号： H01L33/44 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , Y10S438/913 , Y10S438/93 , Y10S438/958
摘要： A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown layers include, for example, a GaN buffer layer, an n-GaN layer, an InGaN active layer, a p-AlGaN layer, and a p.sup.+ -GaN contact layer. After the growth of the layers, the substrate is kept in the reaction chamber, and a passivation film of, for example, SiNx, SiO2, or SiON is formed on top of the grown layers according to a CVD or GS-MBE method. Since the top of the grown layers is not exposed to air outside the reaction chamber, no oxidization or contamination occurs on the top of the grown layers. The compound semiconductor device is manufactured through simpler processes compared with a prior art that needs separate apparatuses for growing and forming the layers and passivation film.
摘要翻译：将用于形成化合物半导体器件的衬底放置在反应室中。使用MOCVD方法或GS-MBE方法来在衬底上生长化合物半导体层。生长层包括例如GaN缓冲层，n-GaN层，InGaN有源层，p-AlGaN层和p + -GaN接触层。在层的生长之后，将基板保持在反应室中，并且根据CVD或GS-MBE方法在生长层的顶部上形成例如SiN x，SiO 2或SiON的钝化膜。由于生长层的顶部不暴露于反应室外部的空气，因此在生长层的顶部不发生氧化或污染。与现有技术相比，通过更简单的工艺制造复合半导体器件，其需要用于生长和形成层和钝化膜的单独的装置。

80. 发明授权

US5821555A Semicoductor device having a hetero interface with a lowered barrier 失效
标题翻译：具有低阻挡层的异质界面的半导体器件
公开(公告)号：US5821555A
公开(公告)日：1998-10-13
申请号：US618823
申请日：1996-03-20
申请人： Shinji Saito , Masaaki Onomura , Yukie Nishikawa , Masayuki Ishikawa , Peter James Parbrook
发明人： Shinji Saito , Masaaki Onomura , Yukie Nishikawa , Masayuki Ishikawa , Peter James Parbrook
IPC分类号： H01L33/00 , H01L33/02 , H01L29/26
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0087
摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
摘要翻译：半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层所述第二半导体具有高于所述第二半导体层的杂质浓度。

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