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    • 74. 发明申请
    • Tool mounting device for turning center
    • 车削中心用工具安装装置
    • US20060188353A1
    • 2006-08-24
    • US11337649
    • 2006-01-24
    • Takio NakamuraAkihiro GotoTatsuo ShimizuTakashi Ueda
    • Takio NakamuraAkihiro GotoTatsuo ShimizuTakashi Ueda
    • B23C5/26
    • B23B31/261Y10T82/2511Y10T408/95Y10T408/953Y10T409/309408Y10T409/309464
    • To provide a tool mounting device for a turning center that allows a rotating tool to be clamped/fixed using a shared clamp mechanism (8), and a turning tool (1B) to be clamped/fixed in an engaged/locked state in a turning center. In the turning center configured with the shared clamp mechanism (8), a cylinder device (9) acting as a drawbar drive device (9) of the clamp mechanism (8) has a first clamp position (b) and second clamp position (c) in relation to a release position (a); a rotation allowance gap (14) is maintained between the stopper (12) and the bearing unit (13) in the first clamp position (b) to specifically clamp/fix the rotating tool (1A); the reciprocating driver (11) is driven by an amount equal to the rotation allowance gap (14) in the second clamp position (c); and when the bearing unit (13) and the stopper (12) are brought into contact and a load is imposed, the stopper (12) is supported/stopped by the bearing unit (13), and the reciprocating driver (11) is engaged/locked by the wedge mechanism (18) in the position of the return blocking state in which the return of the drawbar (7) is blocked.
    • 为了提供一种用于转动中心的工具安装装置,该工具安装装置允许使用共用夹紧机构(8)夹紧/固定旋转工具,以及将被夹紧/固定在接合/锁定状态的转动工具(1B) 车削中心。 在配置有共享夹紧机构(8)的车削中心中,作为夹紧机构(8)的牵引杆驱动装置(9)的缸装置(9)具有第一夹紧位置(b)和第二夹紧位置(c )相对于释放位置(a); 在第一夹紧位置(b)中在止动件(12)和轴承单元(13)之间保持旋转允许间隙(14),以特定地夹紧/固定旋转工具(1A); 往复式驱动器(11)的驱动量等于第二夹持位置(c)中的旋转允许间隙(14); 并且当轴承单元(13)和止动件(12)接触并施加负载时,止动器(12)由轴承单元(13)支撑/停止,并且往复式驱动器(11)接合 通过楔形机构(18)锁定在拉杆(7)的返回被阻挡的返回阻挡状态的位置。
    • 75. 发明授权
    • Polymer particles and process for production thereof
    • 聚合物颗粒及其生产方法
    • US07094832B2
    • 2006-08-22
    • US10482869
    • 2003-04-28
    • Takashi UedaYoshinori Takeda
    • Takashi UedaYoshinori Takeda
    • C08J3/12C08J3/26
    • C08J3/16C08J3/005C08J3/12C08J2333/00Y10T428/2991
    • The present invention suggests thermoplastic polymer particles for molding, which can solve all at once the problem of fine powder caused by suspension polymerization process, the problem of reducing energy consumption when drying caused by emulsion polymerization process and the problem of the compounding process for processors, and a process for preparing the same. 100 parts by weight of polymer particles having an average particle size of 50 to 500 μm prepared by suspension polymerization are coated with 22 to 100 parts by weight of an emulsion polymer prepared by emulsion polymerization. A polymer suspension comprising the polymer having an average particle size of 50 to 500 μm prepared by suspension polymerization and a polymer latex prepared by emulsion polymerization are mixed in a proportion of 22 to 100 parts by weight of the emulsion polymer based on 100 parts by weight of the suspension polymer. After the solid content concentration of the polymer particles within the suspension of the polymer mixture is adjusted to 25 to 35% by weight, the mixture is contacted with an electrolytic aqueous solution at the Vicat softening temperature of the emulsion polymer or lower. Then, after heating to the Vicat softening temperature of the emulsion polymer or higher, the polymer particles are recovered by solid-liquid separation.
    • 本发明提出了用于成型的热塑性聚合物颗粒,其可以立即解决由悬浮聚合过程引起的细粉末的问题,降低由乳液聚合过程引起的干燥时的能量消耗的问题和处理剂的配混过程的问题, 及其制备方法。 通过悬浮聚合制备100重量份平均粒径为50-500μm的聚合物颗粒,用22至100重量份通过乳液聚合制备的乳液聚合物涂覆。 将包含通过悬浮聚合制备的平均粒径为50-500μm的聚合物和通过乳液聚合制备的聚合物胶乳的聚合物悬浮液以相对于100重量份的乳液聚合物的22至100重量份的比例混合 的悬浮聚合物。 将聚合物混合物的悬浮液内的聚合物粒子的固体成分浓度调整为25〜35重量%之后,使混合物与乳液聚合物的维卡软化温度以下的电解水溶液接触。 然后,在加热到乳液聚合物的维卡软化温度以上之后,通过固液分离回收聚合物粒子。
    • 76. 发明授权
    • Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device
    • 半导体衬底的制造方法和半导体器件的制造方法
    • US07084051B2
    • 2006-08-01
    • US10457013
    • 2003-06-09
    • Takashi Ueda
    • Takashi Ueda
    • H10L21/26
    • H01L29/1054H01L21/02381H01L21/0245H01L21/02502H01L21/02532H01L21/02664H01L21/26506H01L21/324H01L29/7842Y10S438/973
    • A purpose of the invention is to provide a manufacturing method for a semiconductor substrate in which a high quality strained silicon channel can easily be formed without sacrificing the processing efficiency of a wafer and to provide a manufacturing method for a semiconductor device wherein the driving performance of a PMOS transistor, in addition to that of an NMOS transistor, can be improved.The invention provides a manufacturing method for a semiconductor substrate with the steps of: forming a SiGe film on the top surface of a substrate having a silicon monocrystal layer in the (111) or (110) plane direction as the surface layer; introducing buried crystal defects into the above described substrate by carrying out ion implantation and annealing treatment; and forming a semiconductor film on the above described SiGe film.
    • 本发明的目的是提供一种可以容易地形成高品质应变硅通道的半导体衬底的制造方法,而不牺牲晶片的处理效率,并且提供一种半导体器件的制造方法,其中驱动性能 除了NMOS晶体管的PMOS晶体管之外,还可以提高PMOS晶体管。 本发明提供一种半导体衬底的制造方法,其步骤为:在(111)或(110)面方向的具有硅单晶层的衬底的顶表面上形成SiGe膜作为表面层; 通过进行离子注入和退火处理将掩埋的晶体缺陷引入到上述衬底中; 并在上述SiGe膜上形成半导体膜。