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    • 73. 发明授权
    • OFET structures with both n- and p-type channels
    • OFET结构具有n型和p型通道
    • US07470574B2
    • 2008-12-30
    • US11330472
    • 2006-01-12
    • Zhenan BaoEvert-Jan BorkentDawen Li
    • Zhenan BaoEvert-Jan BorkentDawen Li
    • H01L21/00H01L21/84
    • H01L51/0541H01L51/0036H01L51/0078H01L51/0545
    • The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.
    • 本发明提供一种双有机场效应晶体管(OFET)结构及其制造方法。 双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。 双重OFET结构还包括源电极和漏电极,源极和漏极与有机半导体层中的一个接触。 双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。 第一栅极结构被配置为控制n型有机半导体层的沟道区,并且第二栅极结构被配置为控制p型有机半导体层的沟道区。