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1. 发明授权

US07122828B2 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same 失效
标题翻译：具有诱导高导电性和低导电性的区域的半导体器件及其制造方法
公开(公告)号：US07122828B2
公开(公告)日：2006-10-17
申请号：US10671303
申请日：2003-09-24
申请人： Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
发明人： Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
IPC分类号： H01L35/24
CPC分类号： H01L27/283 , H01L51/0036 , H01L51/0052 , H01L51/0516
摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.
摘要翻译：半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

2. 发明授权

US07704784B2 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same 有权
标题翻译：具有诱导高导电性和低导电性的区域的半导体器件及其制造方法
公开(公告)号：US07704784B2
公开(公告)日：2010-04-27
申请号：US11354365
申请日：2006-02-15
申请人： Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
发明人： Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L51/0036 , H01L51/0052 , H01L51/0516
摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.
摘要翻译：半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

3. 发明授权

US06885024B2 Devices with organic crystallite active channels 有权
公开(公告)号：US06885024B2
公开(公告)日：2005-04-26
申请号：US10256885
申请日：2002-09-27
申请人： Zhenan Bao , Howard Edan Katz , Christian Kloc
发明人： Zhenan Bao , Howard Edan Katz , Christian Kloc
IPC分类号： H01L35/24 , H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0012 , H01L51/0014
摘要： A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

4. 发明授权

US06575013B2 Electronic odor sensor 有权
公开(公告)号：US06575013B2
公开(公告)日：2003-06-10
申请号：US09793642
申请日：2001-02-26
申请人： Zhenan Bao , Brian Keith Crone , Ananth Dodabalapur , Alan Gelperin , Howard Edan Katz
发明人： Zhenan Bao , Brian Keith Crone , Ananth Dodabalapur , Alan Gelperin , Howard Edan Katz
IPC分类号： G01N33497
CPC分类号： G01N33/0031 , G01N27/4148 , G01N33/0047
摘要： An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

5. 发明授权

US07045470B2 Methods of making thin dielectric layers on substrates 有权
标题翻译：在基片上制作薄介电层的方法
公开(公告)号：US07045470B2
公开(公告)日：2006-05-16
申请号：US10701185
申请日：2003-11-04
申请人： Zhenan Bao , Howard Edan Katz
发明人： Zhenan Bao , Howard Edan Katz
IPC分类号： H01L21/31 , H01L21/469 , H01L21/3205 , H01L21/4963 , H01L21/336
CPC分类号： H01L21/02203 , H01L21/02118 , H01L21/02126 , H01L21/02189 , H01L21/02211 , H01L21/3121 , H01L29/4908 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： Apparatus comprising: a first substrate; a dielectric layer comprising a first dielectric material on the first substrate, the dielectric layer having a dielectric layer thickness and being traversed by through holes passing from an interface with the first substrate, to an opposite side of the dielectric layer; and a second dielectric material at least partially blocking the through holes. Methods for making such apparatus.
摘要翻译：一种装置，包括：第一基板; 电介质层，其包括在所述第一基板上的第一电介质材料，所述电介质层具有电介质层厚度，并且穿过通过所述第一基板的界面的通孔到所述电介质层的相对侧; 以及至少部分地阻挡通孔的第二电介质材料。制造这种装置的方法。

6. 发明授权

US6150668A Thin-film transistor monolithically integrated with an organic light-emitting diode 有权
标题翻译：与有机发光二极管单片集成的薄膜晶体管
公开(公告)号：US6150668A
公开(公告)日：2000-11-21
申请号：US391729
申请日：1999-09-08
申请人： Zhenan Bao , Ananth Dodabalapur , Howard Edan Katz , Venkataram Reddy Raju , John A. Rogers
发明人： Zhenan Bao , Ananth Dodabalapur , Howard Edan Katz , Venkataram Reddy Raju , John A. Rogers
IPC分类号： H01L29/786 , G09F9/30 , H01L27/15 , H01L27/32 , H01L51/00 , H01L51/30 , H01L51/40 , H01L33/00
CPC分类号： H01L27/3248 , H01L27/3274 , H01L51/0545 , H01L51/0036 , H01L51/0038 , H01L51/005
摘要： A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.
摘要翻译：公开了一种其中一个或多个薄膜晶体管与发光二极管单片集成的器件。薄膜晶体管具有有机半导体层。发光二极管的发光层也是有机材料。通过将薄膜晶体管和发光二极管的制造集成在衬底上并通过采用低成本制造技术来经济地制造器件。

7. 发明授权

US08963126B2 Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material 有权
标题翻译：包括混合半导体介电材料的低电压N沟道晶体管
公开(公告)号：US08963126B2
公开(公告)日：2015-02-24
申请号：US12743977
申请日：2009-01-07
申请人： Howard Edan Katz , Bhola Nath Pal , Kevin Cua See , Byung Jun Jung
发明人： Howard Edan Katz , Bhola Nath Pal , Kevin Cua See , Byung Jun Jung
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L29/40 , H01L51/05 , H01G9/00 , H01G9/022 , H01G9/045 , H01L51/10 , C07D333/50 , C07D409/00 , C07D495/22
CPC分类号： H01L29/408 , H01G9/00 , H01G9/022 , H01G9/045 , H01L29/401 , H01L51/0053 , H01L51/0533 , H01L51/0558 , H01L51/102
摘要： Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.
摘要翻译：混合半导体介电材料和使用混合半导体介电材料的电子或电光器件。混合半导体介电材料包括具有提供n型半导体性质的芯部分和向混合半导体介电材料层提供介电特性的侧链的分子。具体的杂化半导体介电材料包括具有侧链的四羧酸二酰亚胺化合物，其具有通过亚烷基或杂亚烷基连接基团与四羧酸二酰亚胺结构连接的氟取代的脂族或芳族部分。

8. 发明授权

US08309955B2 Devices having high dielectric constant, ionically-polarizable materials 有权
标题翻译：具有高介电常数，离子极化材料的器件
公开(公告)号：US08309955B2
公开(公告)日：2012-11-13
申请号：US12743764
申请日：2009-01-07
申请人： Howard Edan Katz , Bhola Nath Pal , Kevin Cua See
发明人： Howard Edan Katz , Bhola Nath Pal , Kevin Cua See
IPC分类号： H01L29/08
CPC分类号： H01L29/408 , H01G9/00 , H01G9/022 , H01G9/045 , H01L29/401 , H01L51/0053 , H01L51/0533 , H01L51/0558 , H01L51/102
摘要： An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation.
摘要翻译：电子或电光器件具有第一电极，与第一电极间隔开的第二电极和设置在第一和第二电极之间的电介质层。电介质层具有电绝缘平面层，其间具有插入离子，使得电绝缘平面层在施加电压下提供阻挡插入离子到第一和第二电极的阻挡，同时在操作期间允许电介质层的极化。

9. 发明授权

US06711308B2 Electro-optical modulators 有权
公开(公告)号：US06711308B2
公开(公告)日：2004-03-23
申请号：US10032798
申请日：2001-12-26
申请人： Christoph Georg Erben , Douglas M Gill , Howard Edan Katz , Mark Lee
发明人： Christoph Georg Erben , Douglas M Gill , Howard Edan Katz , Mark Lee
IPC分类号： G02F1035
CPC分类号： G02B6/1221 , G02B6/10 , G02B6/12004 , G02B6/26 , G02B2006/12038 , G02B2006/12061 , G02B2006/12069 , G02B2006/12097 , G02B2006/12176 , G02B2006/12197
摘要： An electro-optical modulator includes an optical waveguide for carrying an optical carrier wave and a control waveguide for carrying a control wave. The optical waveguide includes a cladding layer and a core. The two waveguides are collinear and overlap in an interaction region so that the refractive index of the optical waveguide responds to electric fields generated by the control wave in the interaction region. The refractive index of the cladding layer at the control wave's wavelength is higher than the refractive index of the core at the optical carrier wave's wavelength.

10. 发明授权

US06403397B1 Process for fabricating organic semiconductor device involving selective patterning 有权
标题翻译：用于制造涉及选择性图案化的有机半导体器件的工艺
公开(公告)号：US06403397B1
公开(公告)日：2002-06-11
申请号：US09605507
申请日：2000-06-28
申请人： Howard Edan Katz
发明人： Howard Edan Katz
IPC分类号： H01L5140
CPC分类号： H01L51/0004 , H01L51/0014 , H01L51/0545
摘要： An improved process for forming devices utilizing patterned organic semiconductor films is provided. The process involves treating a surface to selectively provide regions of greater affinity and lesser affinity for an organic semiconductor or an organic semiconductor solution. When the organic semiconductor, or solution comprising the semiconductor, is deposited on the treated surface, either the organic semiconductor or the organic semiconductor solution dewets from the lesser affinity regions or the resultant film adheres only weakly to the lesser affinity regions such that selective removal is readily performed. And even where such removal is not performed, the portions of the organic semiconductor film overlying the greater affinity regions exhibit higher mobility and better film continuity relative to the other portions of the film.
摘要翻译：提供了利用图案化有机半导体膜形成器件的改进方法。该方法包括处理表面以选择性地提供对有机半导体或有机半导体溶液具有更高亲和力和较小亲和力的区域。当有机半导体或包含半导体的溶液沉积在经处理的表面上时，有机半导体或有机半导体溶液从较小亲合性区域或所得膜露出仅对较小亲合性区域弱，使得选择性除去很容易执行。并且即使在不进行这种去除的情况下，覆盖较大亲合性区域的有机半导体膜的部分相对于膜的其它部分表现出更高的迁移率和更好的膜连续性。

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