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1. 发明申请

US20050285099A1 OFET structures with both n- and p-type channels 有权
标题翻译： OFET结构具有n型和p型通道
公开(公告)号：US20050285099A1
公开(公告)日：2005-12-29
申请号：US10875478
申请日：2004-06-24
申请人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
发明人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
IPC分类号： H01L21/00 , H01L29/08 , H01L51/00 , H01L51/05
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0078 , H01L51/0545
摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.
摘要翻译：本发明提供一种双有机场效应晶体管（OFET）结构及其制造方法。双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。双重OFET结构还包括源电极和漏电极，源极和漏极与有机半导体层中的一个接触。双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。第一栅极结构被配置为控制n型有机半导体层的沟道区，并且第二栅极结构被配置为控制p型有机半导体层的沟道区。

2. 发明授权

US07470574B2 OFET structures with both n- and p-type channels 有权
标题翻译： OFET结构具有n型和p型通道
公开(公告)号：US07470574B2
公开(公告)日：2008-12-30
申请号：US11330472
申请日：2006-01-12
申请人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
发明人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0078 , H01L51/0545
摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.
摘要翻译：本发明提供一种双有机场效应晶体管（OFET）结构及其制造方法。双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。双重OFET结构还包括源电极和漏电极，源极和漏极与有机半导体层中的一个接触。双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。第一栅极结构被配置为控制n型有机半导体层的沟道区，并且第二栅极结构被配置为控制p型有机半导体层的沟道区。

3. 发明授权

US07160754B2 P-type OFET with fluorinated channels 有权
标题翻译：带有氟化通道的P型OFET
公开(公告)号：US07160754B2
公开(公告)日：2007-01-09
申请号：US11337897
申请日：2006-01-23
申请人： Zhenan Bao , Evert-Jan Borkent
发明人： Zhenan Bao , Evert-Jan Borkent
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , H01L51/0036
摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
摘要翻译：本发明提供有机场效应晶体管（OFET）和制造OFET的方法。被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。半导体层包括有机半导体分子。每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。链的一端与氟化烷基结合，链的另一端与核结合。与碳原子偶联的取代基具有小于约4的电负性。

4. 发明申请

US20060138406A1 OFET structures with both n- and p-type channels 有权
公开(公告)号：US20060138406A1
公开(公告)日：2006-06-29
申请号：US11330472
申请日：2006-01-12
申请人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
发明人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
IPC分类号： H01L29/08
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0078 , H01L51/0545
摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.

5. 发明申请

US20060134824A1 P-type OFET with fluorinated channels 有权
公开(公告)号：US20060134824A1
公开(公告)日：2006-06-22
申请号：US11337897
申请日：2006-01-23
申请人： Zhenan Bao , Evert-Jan Borkent
发明人： Zhenan Bao , Evert-Jan Borkent
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , H01L51/0036
摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.

6. 发明授权

US07057205B2 P-type OFET with fluorinated channels 有权
标题翻译：带有氟化通道的P型OFET
公开(公告)号：US07057205B2
公开(公告)日：2006-06-06
申请号：US10802973
申请日：2004-03-17
申请人： Zhenan Bao , Evert-Jan Borkent
发明人： Zhenan Bao , Evert-Jan Borkent
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0508 , H01L51/0036
摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
摘要翻译：本发明提供有机场效应晶体管（OFET）和制造OFET的方法。被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。半导体层包括有机半导体分子。每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。链的一端与氟化烷基结合，链的另一端与核结合。与碳原子偶联的取代基具有小于约4的电负性。

7. 发明授权

US07045814B2 OFET structures with both n- and p-type channels 有权
标题翻译： OFET结构具有n型和p型通道
公开(公告)号：US07045814B2
公开(公告)日：2006-05-16
申请号：US10875478
申请日：2004-06-24
申请人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
发明人： Zhenan Bao , Evert-Jan Borkent , Dawen Li
IPC分类号： H01L51/10
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0078 , H01L51/0545
摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.
摘要翻译：本发明提供一种双有机场效应晶体管（OFET）结构及其制造方法。双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。双重OFET结构还包括源电极和漏电极，源极和漏极与有机半导体层中的一个接触。双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。第一栅极结构被配置为控制n型有机半导体层的沟道区，并且第二栅极结构被配置为控制p型有机半导体层的沟道区。

8. 发明申请

US20050205861A1 P-type OFET with fluorinated channels 有权
标题翻译：带有氟化通道的P型OFET
公开(公告)号：US20050205861A1
公开(公告)日：2005-09-22
申请号：US10802973
申请日：2004-03-17
申请人： Zhenan Bao , Evert-Jan Borkent
发明人： Zhenan Bao , Evert-Jan Borkent
IPC分类号： H01L51/05 , H01L21/335 , H01L29/786 , H01L35/24 , H01L51/00 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0508 , H01L51/0036
摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
摘要翻译：本发明提供有机场效应晶体管（OFET）和制造OFET的方法。被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。半导体层包括有机半导体分子。每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。链的一端与氟化烷基结合，链的另一端与核结合。与碳原子偶联的取代基具有小于约4的电负性。

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