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71. 发明授权

US5695561A Disk tray used with an apparatus for forming a protective film on an optical disk 失效
标题翻译：与在光盘上形成保护膜的装置一起使用的盘托盘
公开(公告)号：US5695561A
公开(公告)日：1997-12-09
申请号：US569949
申请日：1995-12-11
申请人： Hiroshi Tomiyama , Shoji Akiyama
发明人： Hiroshi Tomiyama , Shoji Akiyama
IPC分类号： G11B7/26 , B05D3/06 , G11B7/24 , B05B5/025 , B05C5/00 , B05C9/08 , C23C16/00
CPC分类号： B05D3/067 , B29C65/1406 , B29C65/1448 , B29C65/1496 , B29C66/452 , G11B7/26 , B29C2795/002 , B29L2017/005
摘要： A machine for forming a protective film on optical disks transports disks through stages in which a protective film is applied to their surfaces. The protective film is then set while the disks are located upon disk trays specifically configured to promote setting of the portion of the protective film overlying the outer circumferential end faces of the disks. The disk tray is provided with reflective surfaces which reflect ultraviolet rays against the outer circumferential end faces of the disks.
摘要翻译：用于在光盘上形成保护膜的机器通过在其表面上施加保护膜的阶段传送盘。然后将保护膜设置在盘被定位在盘托盘上，该盘托盘被特别地构造成促进覆盖在盘的外周端面上的保护膜的部分的设置。盘托盘设置有反射表面，其反射紫外线抵靠盘的外圆周端面。

72. 发明授权

US09459182B2 Microchip and particle analyzing apparatus 有权
标题翻译： Microchip和粒子分析仪器
公开(公告)号：US09459182B2
公开(公告)日：2016-10-04
申请号：US14234469
申请日：2012-06-29
申请人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki
发明人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki
IPC分类号： G01N1/00 , B01L3/02 , G01N21/01 , B01L3/00 , G01N15/14
CPC分类号： B01L3/0268 , B01L3/502707 , B01L3/502761 , B01L3/502776 , B01L2200/0652 , B01L2200/12 , B01L2300/0816 , B01L2300/0887 , B01L2400/0433 , B01L2400/0487 , G01N1/00 , G01N15/1484 , G01N21/01 , G01N2015/149
摘要： There is provided a microchip including a flow channel, an ejection portion, and a cutout portion. The flow channel is configured to convey a fluid therein. The ejection portion includes an opening directed toward an end face of a substrate layer, and the ejection portion is configured to eject the fluid flowing through the flow channel to outside. The substrate layer is laminated to each other. The cutout portion is formed between the opening of the ejection portion and the end face of the substrate layer. The cutout portion has a larger diameter than that of the opening.
摘要翻译：提供了一种包括流路，喷射部和切口部的微芯片。流动通道构造成在其中输送流体。喷射部包括朝向基板层的端面的开口部，喷出部构成为将流过流路的流体喷出到外部。基板层彼此层叠。切口部形成在喷射部的开口部与基板层的端面之间。切口部的直径比开口的直径大。

73. 发明授权

US08975159B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08975159B2
公开(公告)日：2015-03-10
申请号：US13318944
申请日：2010-05-06
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L21/301 , H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer having a semiconductor film on a handle substrate involving the steps of: implanting ions into a semiconductor substrate to form an ion-implanted layer; subjecting the surface of at least one of the semiconductor substrate and the handle substrate to a surface activation treatment; bonding the surface of the semiconductor substrate to the surface of the handle substrate at a temperature from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to obtain a bonded body; and transferring a semiconductor film to the handle substrate by subjecting the bonded body to a temperature 30° C. to 100° C. higher than the bonding temperature, and irradiating the bonded body with visible light from a handle or semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to embrittle the interface of the ion-implanted layer.
摘要翻译：一种用于制造在手柄基板上具有半导体膜的接合晶片的方法，包括以下步骤：将离子注入到半导体衬底中以形成离子注入层; 对半导体衬底和手柄衬底中的至少一个的表面进行表面活化处理; 在50℃至350℃的温度下将半导体衬底的表面粘合到手柄衬底的表面上; 在200℃至350℃的最高温度下加热粘合的基材以获得粘合体; 并且通过使接合体比接合温度高30℃至100℃的温度将半导体膜转移到手柄基板，并且用手柄或半导体衬底侧的可见光向离子体照射离子所述半导体衬底的植入层以使所述离子注入层的界面脆化。

74. 发明授权

US08263478B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08263478B2
公开(公告)日：2012-09-11
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

75. 发明授权

US08227290B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227290B2
公开(公告)日：2012-07-24
申请号：US11976026
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
发明人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/186 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.
摘要翻译：一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

76. 发明授权

US08227289B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227289B2
公开(公告)日：2012-07-24
申请号：US11976020
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/186 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面硅层。

77. 发明申请

US20120058622A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120058622A1
公开(公告)日：2012-03-08
申请号：US13318250
申请日：2010-04-30
申请人： Makoto Kawai , Yuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yuji Tobisaka , Shoji Akiyama
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/67109
摘要： When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate (3) from a surface thereof to form an ion-implanted interface (5); bonding a handle substrate (7) with a thermal expansion coefficient higher than that of the donor substrate (3) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (1), and delaminating the donor substrate (3) of the assembly (1) at the ion-implanted interface wherein the assembly (1) has been cooled to a temperature not greater than room temperature by a cooling apparatus (20), so that a donor film is transferred onto the handle substrate (7).
摘要翻译：当处理基板的热膨胀系数高于供体基板的热膨胀系数时，可以提供分层而不引起基板的裂纹。一种用于制造接合晶片的方法，至少具有以下步骤：从其表面将离子注入施主衬底（3）中以形成离子注入界面（5）; 将具有高于施主衬底（3）的热膨胀系数的手柄衬底（7）接合到施主衬底的离子注入表面上以提供接合衬底，对接合的衬底进行热处理以提供组件（ 1），并且在离子注入界面处使组件（1）的施主衬底（3）分层，其中组件（1）已经被冷却装置（20）冷却到不高于室温的温度，使得施主膜转移到手柄基板（7）上。

78. 发明授权

US08119903B2 Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08119903B2
公开(公告)日：2012-02-21
申请号：US11984182
申请日：2007-11-14
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , H01L31/0216 , B05D5/12
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/03921 , H01L31/056 , H01L31/0682 , H01L31/1892 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.
摘要翻译：公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

79. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

80. 发明申请

US20110290320A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 审中-公开
公开(公告)号：US20110290320A1
公开(公告)日：2011-12-01
申请号：US13137215
申请日：2011-07-28
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/0224 , H01L31/0256 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

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