会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 76. 发明授权
    • Methods for forming openings in doped silicon dioxide
    • 在掺杂二氧化硅中形成开口的方法
    • US07541270B2
    • 2009-06-02
    • US10218047
    • 2002-08-13
    • Li Li
    • Li Li
    • H01L21/44
    • H01L21/76897H01L21/31116
    • Methods of forming openings in doped silicon dioxide layers and of forming self aligned contact holes are provided. The openings are generally etched in a plasma processing chamber. An etchant gas mixture comprising at least one fluorocarbon gas, at least one hydrogen containing gas, and at least one inert gas is used to strike a plasma. The plasma etches the opening in the doped oxide layer, and the etch is relatively highly selective of the doped oxide layer and relatively minimally selective of undoped oxide and silicon nitride layers. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims.
    • 提供了在掺杂二氧化硅层中形成开口并形成自对准接触孔的方法。 通常在等离子体处理室中蚀刻开口。 使用包含至少一种碳氟化合物气体,至少一种含氢气体和至少一种惰性气体的蚀刻气体混合物来冲击等离子体。 等离子体蚀刻掺杂氧化物层中的开口,并且蚀刻对于掺杂的氧化物层是相对高选择性的,并且相对最低限度地选择性的未掺杂的氧化物和氮化硅层。 要强调的是,该摘要被提供以符合要求摘要的规则,这将允许搜索者或其他读者快速确定技术公开的主题。 提交的理解是不会用于解释或限制权利要求的范围或含义。
    • 78. 发明申请
    • METHODS FOR FABRICATING RESIDUE-FREE CONTACT OPENINGS
    • 用于制造无残留接触开口的方法
    • US20090104767A1
    • 2009-04-23
    • US12341836
    • 2008-12-22
    • Li Li
    • Li Li
    • H01L21/4763H01L21/74H01L21/768H01L21/302
    • H01L21/76814H01L21/76805Y10S134/902Y10S438/906
    • A two-step via cleaning process that removes metal polymer and oxide polymer residues from a via with substantially no damage to the via or underlying structures on a semiconductor substrate. The via is formed through a dielectric layer and a barrier layer that are disposed over a metal-containing trace disposed on a semiconductor substrate. The sidewalls of the via may be coated with a residue layer including a distinct oxide polymer component and a distinct metal polymer component. The two-step cleaning process comprises subjecting the residue layer to a nitric acid dip that removes the metal polymer component to expose the oxide polymer component. The oxide polymer component is then subjected to a phosphoric acid dip that removes the oxide polymer component. The oxide polymer and metal polymer residues may also be removed during the fabrication of the via by removing them directly after their respective formations.
    • 两步通孔清洁工艺,其从通孔中除去金属聚合物和氧化物聚合物残余物,基本上不损坏半导体衬底上的通孔或下面的结构。 通孔设置在设置在半导体衬底上的含有金属的迹线上的电介质层和阻挡层。 通孔的侧壁可以涂覆有包含不同的氧化物聚合物组分和不同的金属聚合物组分的残余层。 两步清洁方法包括使残余物层进行硝酸浸渍,其除去金属聚合物组分以暴露氧化物聚合物组分。 然后将氧化物聚合物组分进行磷酸浸渍,从而除去氧化物聚合物组分。 氧化物聚合物和金属聚合物残余物也可以在通孔的制造期间通过在它们各自的形成之后直接除去而除去。