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71. 发明授权

US06821828B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06821828B2
公开(公告)日：2004-11-23
申请号：US10252838
申请日：2002-09-24
申请人： Mitsuhiro Ichijo , Taketomi Asami , Noriyoshi Suzuki
发明人： Mitsuhiro Ichijo , Taketomi Asami , Noriyoshi Suzuki
IPC分类号： H01L2120
CPC分类号： H01L21/0237 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02672 , H01L21/02686 , H01L21/3221 , H01L21/3223 , H01L27/1277
摘要： A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021 /cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
摘要翻译：提供一种降低元件之间的波动的技术，其中通过使用加速半导体膜的结晶的金属元素获得具有晶体结构的半导体膜，然后有效地去除残留在膜中的金属元素。通过等离子体CVD从作为原料气体的甲硅烷和一氧化二氮形成具有晶体结构的半导体膜上的阻挡层。在形成吸杂位置的步骤中，通过等离子体CVD形成具有非晶结构且含有高浓度惰性气体元素的半导体膜，具体地，1×10 20至1×10 21 / cm 3。该膜通常是非晶硅膜。然后进行吸气。

72. 发明授权

US06808968B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06808968B2
公开(公告)日：2004-10-26
申请号：US10074050
申请日：2002-02-14
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L29/78678
摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
摘要翻译：旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108）具有晶体结构。进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107））。之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

73. 发明授权

US06794229B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06794229B2
公开(公告)日：2004-09-21
申请号：US09842315
申请日：2001-04-26
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Shunpei Yamazaki
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Shunpei Yamazaki
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L21/32136 , H01L21/67207 , H01L27/12 , H01L27/1214 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L2029/7863
摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
摘要翻译：提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。

74. 发明授权

US06743700B2 Semiconductor film, semiconductor device and method of their production 失效
标题翻译：半导体薄膜，半导体器件及其制作方法
公开(公告)号：US06743700B2
公开(公告)日：2004-06-01
申请号：US10155986
申请日：2002-05-29
申请人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
发明人： Taketomi Asami , Mitsuhiro Ichijo , Noriyoshi Suzuki , Hideto Ohnuma , Masato Yonezawa
IPC分类号： H01L21322
CPC分类号： H01L29/78636 , C23C16/0272 , C23C16/24 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/3221 , H01L29/66757 , H01L29/78621
摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
摘要翻译：通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜，高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

75. 发明授权

US06703265B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06703265B2
公开(公告)日：2004-03-09
申请号：US09918547
申请日：2001-08-01
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
IPC分类号： H01L2100
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.

76. 发明授权

US5330578A Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5330578A
公开(公告)日：1994-07-19
申请号：US849738
申请日：1992-03-11
申请人： Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
发明人： Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
IPC分类号： C23C16/458 , C23C16/509 , H01J37/32 , C23C16/50 , C23C16/54
CPC分类号： H01J37/32091 , C23C16/4587 , C23C16/5096 , H01J37/32532
摘要： A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.
摘要翻译：一种等离子气体反应装置，包括反应室，用于向反应室供应反应气体的系统和用于排出不必要的反应产物的排气系统。具体地说，该装置包括设置在反应室中的一对面对电极，除了电极彼此面对的区域之外，被屏蔽物覆盖。屏蔽件可以包括第一和第二屏蔽件，其中内部第一屏蔽件与电极电绝缘，并且外部第二屏蔽件保持在地电位。该装置还包括用于支撑通过框架围绕基板的基板的基板容器。基板容器的外部保持在地电势中并被与容器电绝缘的导体板覆盖。屏蔽和基板容器被配置为使得由电极提供的电力产生的等离子体被限制在由屏蔽件和容器包围的空间中。

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