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71. 发明授权

US06890042B2 Crawler traveling apparatus 有权
标题翻译：履带式旅行装置
公开(公告)号：US06890042B2
公开(公告)日：2005-05-10
申请号：US10652895
申请日：2003-08-29
申请人： Motonari Inaoka , Yuji Tomiyama , Yoshikazu Aota , Takashi Kobayashi
发明人： Motonari Inaoka , Yuji Tomiyama , Yoshikazu Aota , Takashi Kobayashi
IPC分类号： B62D55/253 , B62D55/14 , B62D55/24
CPC分类号： B62D55/244
摘要： A crawler traveling apparatus includes a rubber crawler belt having a plurality of driving projections formed with a predetermined peripheral pitch on an inner peripheral face of the belt, a drive wheel rotatable when engaged with the driving projections of the crawler belt for driving the belt, and a plurality of free wheels rotatable for laterally guiding the driving projections under movement. Each driving projection has an upper half having a lateral face including an upper half lateral face portion and a lower half having a lower half lateral face portion, the upper half lateral face portion having an erect inclination angle smaller than an erect inclination angle of the lower half lateral face portion. Each free wheel has an inner lateral face opposed to the driving projection, the inner lateral face having an inclined guide face having an inclination parallel to the lower half lateral face portion of the driving projection. The inclined guide face has a height L3 shorter than a height L1 of the lower half lateral face portion when an inner peripheral face of the crawler belt is placed under proper contact with an outer peripheral face of the free wheel.
摘要翻译：一种履带式行走装置，具备：橡胶履带，其具有在所述带的内周面上形成有规定的周向间距的多个驱动突起;与所述履带的驱动突起卡合的驱动轮，用于驱动所述带;以及可旋转的多个自由轮，用于在运动下横向地引导驱动突起。每个驱动突起具有上半部，其具有包括上半侧面部分和具有下半部侧面部分的下半部的侧面，上半侧面部分具有小于下半部分的直立倾斜角度的直立倾斜角度半侧面部分。每个自由轮具有与驱动突起相对的内侧面，内侧面具有倾斜导向面，该倾斜导向面平行于驱动突起的下半侧面部分。当履带的内周面与自由轮的外周面适当接触地放置时，倾斜导向面的高度L 3比下半侧面部的高度L 1短。

72. 发明申请

US20050060918A1 Semi tracked-type working vehicle 有权
标题翻译：半跟踪型工作车
公开(公告)号：US20050060918A1
公开(公告)日：2005-03-24
申请号：US10488646
申请日：2003-06-12
申请人： Motonari Inaoka , Takeshi Imamura , Yuji Tomiyama , Takashi Kobayashi , Yoshikazu Aota
发明人： Motonari Inaoka , Takeshi Imamura , Yuji Tomiyama , Takashi Kobayashi , Yoshikazu Aota
IPC分类号： B62D49/06 , B62D55/02 , B62D55/04 , B62D55/125 , B62D55/14 , B62D55/15 , B62D55/30 , E02F9/02 , E02F5/02
CPC分类号： E02F9/02 , B62D49/0635 , B62D55/02 , B62D55/04 , B62D55/125 , B62D55/14 , B62D55/15 , B62D55/30 , B62D55/305
摘要： A semicrawler-type working vehicle is provided having a vehicle body (3), a front steering control wheel (7) arranged at a front side of the vehicle body, a drive shaft (26) and a pivot shaft (22) arranged at a rear side of the vehicle body, and a semicrawler unit (2) driven by the drive shaft. The semicrawler-type working vehicle comprises: a track frame (16) by which the semicrawler unit (2) is supported via the pivot shaft (22) so as to be pivotable relative to the vehicle body (3); a drive wheel (11) arranged on the drive shaft (26); a front driven wheel (12) and a rear driven wheel (13) that are supported by the track frame (16) such that a horizontal distance from the drive wheel (11) to the front driven wheel (12) is longer than a horizontal distance from the drive wheel (11) to the rear driven wheel (13); and a crawler belt (15) that is wound around the drive wheel (11), the front driven wheel (12), and the rear driven wheel (13). The pivot shaft (22) is displaced forward than a vertical line that runs through a center of the drive wheel (11).
摘要翻译：本发明提供一种半履带式作业车，其具有车身（3），配置在车体前侧的前转向控制轮（7），驱动轴（26）和枢轴（22）车身的后侧，以及由驱动轴驱动的半履带单元（2）。所述半履带式作业车辆包括：履带架（16），所述履带架单元（2）经由所述枢轴（22）被支撑以相对于所述车体（3）枢转; 布置在所述驱动轴（26）上的驱动轮（11）; 由履带架（16）支撑的前驱动轮（12）和后从动轮（13），使得从驱动轮（11）到前从动轮（12）的水平距离比水平从驱动轮（11）到后从动轮（13）的距离; 以及卷绕在驱动轮（11），前从动轮（12）和后从动轮（13）周围的履带（15）。枢轴（22）比穿过驱动轮（11）的中心的垂直线向前位移。

73. 发明授权

US06849502B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06849502B2
公开(公告)日：2005-02-01
申请号：US10457656
申请日：2003-06-10
申请人： Yoshitaka Sasago , Takashi Kobayashi
发明人： Yoshitaka Sasago , Takashi Kobayashi
IPC分类号： H01L21/8234 , G11C16/04 , H01L21/8247 , H01L27/088 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L27/11526 , G11C16/0491 , H01L27/115 , H01L27/11521 , H01L27/11531
摘要： Reliability of a semiconductor device having a nonvolatile memory comprising first through third gate electrodes is enhanced. With a flash memory having first gate electrodes (floating gate electrodes), second gate electrodes (control gate electrodes) and third gate electrodes, isolation parts are formed in a self-aligned manner against patterns of a conductor film for forming the third gate electrodes by filling up the respective isolation grooves and a gate insulator film for select nMISes in a peripheral circuit region is formed prior to the formation of the isolation parts. By so doing, deficiency with the gate insulator film for the select nMISes, caused by stress occurring to the isolation parts, can be reduced. Further, with the semiconductor device including the case of stacked memory cells, the patterns of the conductor film for forming the third gate electrodes, serving as a mask for forming the isolation parts in the self-aligned manner, can be formed without misalignment against channels.
摘要翻译：具有包括第一至第三栅电极的非易失性存储器的半导体器件的可靠性得到增强。利用具有第一栅电极（浮栅电极），第二栅电极（控制栅电极）和第三栅电极的闪速存储器，隔离部分以自对准的方式形成，以抵抗用于形成第三栅电极的导体膜的图案填充相应的隔离沟槽，并且在形成隔离部件之前形成用于在外围电路区域中选择的nMIS的栅极绝缘膜。通过这样做，可以减少由隔离部分发生的应力引起的用于选择性nMIS的栅极绝缘膜的缺陷。此外，通过包括堆叠的存储单元的情况的半导体器件，可以形成用作形成隔离部件的自对准方式的掩模的用于形成第三栅电极的导体膜的图案，而不对准通道。

74. 发明授权

US06835632B2 Semiconductor device and process of producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06835632B2
公开(公告)日：2004-12-28
申请号：US10460215
申请日：2003-06-13
申请人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
发明人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
IPC分类号： H01L2120
CPC分类号： H01L27/0652 , H01L27/0688 , H01L28/20
摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.
摘要翻译：本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二多晶硅层具有负电阻的温度依赖性，反之亦然。此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

75. 外观设计

USD497621S1 Tractor 失效
标题翻译：拖拉机
公开(公告)号：USD497621S1
公开(公告)日：2004-10-26
申请号：US29186348
申请日：2003-07-14
申请人： Motonari Inaoka , Yoshikazu Aota , Takashi Kobayashi , Takeshi Imamura
设计人： Motonari Inaoka , Yoshikazu Aota , Takashi Kobayashi , Takeshi Imamura

76. 发明授权

US06723625B2 Semiconductor device having thin electrode laye adjacent gate insulator and method of manufacture 有权
标题翻译：具有薄电极的半导体器件与相邻的栅极绝缘体和制造方法相互叠合
公开(公告)号：US06723625B2
公开(公告)日：2004-04-20
申请号：US10251753
申请日：2002-09-23
申请人： Toshiyuki Mine , Jiro Yugami , Takashi Kobayashi , Masahiro Ushiyama
发明人： Toshiyuki Mine , Jiro Yugami , Takashi Kobayashi , Masahiro Ushiyama
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7883
摘要： Disclosed is a semiconductor device (e.g., nonvolatile semiconductor memory device) and method of forming the device. The device includes a gate electrode (e.g., floating gate electrode) having a first layer of an amorphous silicon film, or a polycrystalline silicon thin film or a film of a combination of amorphous and polycrystalline silicon, on the gate insulating film. Where the film includes polycrystalline silicon, the thickness of the film is less than 10 nm. A thicker polycrystalline silicon film can be provided on or overlying the first layer. The memory device can increase the write/erase current significantly without increasing the low electric field leakage current after application of stresses, which in turn reduces write/erase time substantially. In forming the semiconductor device, a thin amorphous or polycrystalline silicon film can be provided on the gate insulating film, and a thin insulating film provided on the amorphous silicon film, with a thicker polycrystalline silicon film provided on or overlying the thin insulating film. Where the thin silicon film is amorphous silicon, it can then be polycrystallized, although it need not be. Also disclosed is a technique for selective crystallization of amorphous silicon layers, based upon layer thickness.
摘要翻译：公开了一种半导体器件（例如非易失性半导体存储器件）及其形成方法。该器件包括在栅极绝缘膜上具有非晶硅膜的第一层或多晶硅薄膜或非晶硅和多晶硅的组合的膜的栅电极（例如，浮栅电极）。当膜包括多晶硅时，膜的厚度小于10nm。可以在第一层上或覆盖第一层上提供较厚的多晶硅膜。存储器件可以显着增加写入/擦除电流，而不会在施加应力之后增加低电场漏电流，这反过来大大降低了写入/擦除时间。在形成半导体器件时，可以在栅极绝缘膜上提供薄的非晶或多晶硅膜，以及设置在非晶硅膜上的薄绝缘膜，其上设置有较厚的多晶硅膜或覆盖薄绝缘膜。在薄硅膜是非晶硅的情况下，其然后可以多晶化，尽管不需要。还公开了基于层厚度的非晶硅层的选择性结晶的技术。

77. 发明授权

US06702199B1 Coolant feeding device of machine tool 有权
标题翻译：机床冷却液送料装置
公开(公告)号：US06702199B1
公开(公告)日：2004-03-09
申请号：US09958120
申请日：2001-10-04
申请人： Shinsuke Sugata , Takashi Kobayashi
发明人： Shinsuke Sugata , Takashi Kobayashi
IPC分类号： B05B124
CPC分类号： B23Q11/103 , B23Q11/1015 , B23Q11/1046 , Y02P70/169 , Y10T407/14 , Y10T408/44 , Y10T408/46
摘要： The present invention prevents coolant from leaking out of a valve (23) after a feed pump (4) stops feeding the coolant, and diminishes a time-lag between the onset of feeding the coolant and mist generation, when the feed pump (4) starts feeding the coolant again. In the machine tool of this invention, the coolant is fed from a feed pump (4) into a mist generating device (13) provided on the tip of a spindle (8) by way of a feed line (7), and a valve (23) is provided at an inflow part for coolant of the mist generating device (13) to be closed when the coolant pressure within the feed line (7) lowers below a fixed level. A coolant sucking and delivering (2) sucks a fixed amount of coolant in the feed line (7), when the feed pump (4) stops feeding the coolant. On the other hand, the device (2) feeds a fixed amount of coolant into the feed line (7), when the feed pump (4) begins feeding the coolant.
摘要翻译：本发明在进料泵（4）停止供给冷却剂之后，防止冷却剂从阀门（23）中泄漏，并且当进料泵（4）在进料泵（4）中时，减少了供给冷却剂开始和产生雾气之间的时滞再次开始冷却冷却剂。在本发明的机床中，冷却剂通过供给管线（7）从供给泵（4）供给到设置在主轴（8）的前端上的雾化产生装置（13），阀（7）中的冷却剂压力降低到固定水平以下时，在所述雾化装置（13）的冷却剂的流入部分设置为关闭。当进给泵（4）停止供给冷却剂时，冷却剂吸入和输送（2）吸入供给管线（7）中的固定量的冷却剂。另一方面，当进给泵（4）开始供给冷却剂时，装置（2）将固定量的冷却剂供给到进料管线（7）中。

78. 发明授权

US06690809B2 Microspeaker 失效
标题翻译：微型扬声器
公开(公告)号：US06690809B2
公开(公告)日：2004-02-10
申请号：US09977347
申请日：2001-10-16
申请人： Kazumi Miyamoto , Yoshizumi Ohta , Takashi Kobayashi
发明人： Kazumi Miyamoto , Yoshizumi Ohta , Takashi Kobayashi
IPC分类号： H04R2500
CPC分类号： H04R31/006 , H04R9/045 , H04R9/06 , H04R2499/11
摘要： A case comprises an upper case and a lower case. A vibrating plate is secured to the upper case, a voice coil is secured to an underside of the vibrating plate. Each end portion of the voice coil is engaged in a groove formed in the upper case.
摘要翻译：壳体包括上壳体和下壳体。振动板固定在上壳体上，音圈固定在振动板的下侧。音圈的每个端部接合在形成在上壳体中的凹槽中。

79. 发明授权

US06639780B1 Coolant feeding device of machine tool 失效
标题翻译：机床冷却液送料装置
公开(公告)号：US06639780B1
公开(公告)日：2003-10-28
申请号：US09959408
申请日：2001-10-26
申请人： Shinsuke Sugata , Takashi Kobayashi
发明人： Shinsuke Sugata , Takashi Kobayashi
IPC分类号： H01H4700
CPC分类号： B23Q1/0027 , B23Q11/10 , B23Q11/1015
摘要： The present invention is characterized by a coolant feeding device of a machine tool that supplies coolant to a mist generating device (10) at the tip of a spindle (9) through a coolant feed line (40). A coolant forcing means (11) is provided to the tip of the spindle near the mist generating device to force out the coolant inside a cylinder chamber (21) through a valve path (20). The coolant inside the feed line is repeatedly fed into the cylinder chamber, whereas the coolant forced out from the cylinder chamber is fed into the mist generating device at proper pressure. When the coolant pressure inside the feed line is below a fixed level, the coolant inside the feed line flows into the cylinder chamber. When the coolant pressure inside the feed line is over a fixed level, the coolant inside the cylinder chamber is forced out to the mist generating device. According to the present invention, liquid dropping and various bad influences are prevented, and a fixed amount of coolant is intermittently fed to the mist generating device. Moreover, a proper amount of coolant is timely fed into the mist generating device by controlling actions of a coolant feed pump.
摘要翻译：本发明的特征在于一种机床的冷却剂供给装置，其通过冷却剂供给管线（40）将冷却剂供应到在主轴（9）的尖端处的雾产生装置（10）。冷却剂加压装置（11）设置在靠近雾化装置的主轴的尖端处，以通过阀通道（20）将冷却剂压出气缸室（21）内。进料管内的冷却液重复进入气缸室，而从气缸室排出的冷却剂在合适的压力下被送入雾化装置。当进料管线内的冷却剂压力低于固定水平时，进料管内的冷却剂流入气缸室。当进料管线内的冷却剂压力超过固定水平时，气缸室内的冷却剂被迫排出到雾气发生装置。根据本发明，防止液滴和各种不良影响，并且固定量的冷却剂间歇地供给到雾化装置。此外，通过控制冷却剂供给泵的动作，适量地将冷却剂及时送入雾化装置。

80. 发明授权

US06524924B1 Semiconductor device and process of producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06524924B1
公开(公告)日：2003-02-25
申请号：US09123406
申请日：1998-07-28
申请人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
发明人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
IPC分类号： H01L2120
CPC分类号： H01L27/0652 , H01L27/0688 , H01L28/20
摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistances while the second polycrystalline layer has a negative temperature dependance of resistance, or vise versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.
摘要翻译：本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。使用包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的至少两层结构，并且第一多晶硅层具有正电温度依赖性而第二多晶层具有电阻的负温度依赖性，反之亦然。此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

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