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71. 发明授权

US08329050B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08329050B2
公开(公告)日：2012-12-11
申请号：US12545144
申请日：2009-08-21
申请人： Takashi Sone , Eiichi Nishimura
发明人： Takashi Sone , Eiichi Nishimura
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31144 , H01L21/0206 , H01L21/0337 , H01L21/0338 , H01L21/31116 , H01L21/31138
摘要： A substrate processing method for processing a substrate, on which a processing target layer, an intermediate layer, and a mask layer having an opening to expose a part of the intermediate layer are stacked in this order, includes a shrink etching step. In the shrink etching step, an opening width of the opening of the mask layer is reduced by depositing deposits on a sidewall surface thereof by a plasma generated from a gaseous mixture of depositive gas expressed by a general formula CxHyFz (x, y and z being positive integers) and SF6 gas. Also, there is formed in the intermediate layer an opening having an opening width corresponding to the reduced opening width of the opening of the mask layer by etching the intermediate layer.
摘要翻译：包括用于处理基板的基板处理方法，其中具有处理目标层，中间层和具有用于暴露中间层的一部分的开口的掩模层的顺序包括收缩蚀刻步骤。在收缩蚀刻步骤中，通过用由通式C x H y F z（x，y和z表示）的沉积气体的气体混合物产生的等离子体沉积在其侧壁表面上的沉积物来减小掩模层的开口的开口宽度正整数）和SF6气体。此外，在中间层中形成有通过蚀刻中间层而具有对应于掩模层的开口的开口宽度减小的开口宽度的开口。

72. 发明申请

US20120270406A1 CLEANING METHOD OF PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理装置的清洗方法和等离子体处理方法
公开(公告)号：US20120270406A1
公开(公告)日：2012-10-25
申请号：US13446006
申请日：2012-04-13
申请人： Shigeru Tahara , Eiichi Nishimura
发明人： Shigeru Tahara , Eiichi Nishimura
IPC分类号： B08B7/00 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32853
摘要： A plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a processing gas; a plasma processing chamber communicating with the plasma generating chamber via a partition member; and a high frequency antenna, having a planar shape, provided at an outside of a dielectric window of the plasma generating chamber. The cleaning method includes exciting a hydrogen-containing processing gas into plasma in the plasma generating chamber, introducing hydrogen radicals in the plasma into the plasma processing chamber through the partition member, performing a plasma process on a processing target substrate by allowing the hydrogen radicals to act on the processing target substrate, unloading the processing target substrate, and removing silicon-based deposits generated in the plasma generating chamber by introducing a tetrafluoride (tetrafluoromethane) gas into the plasma generating chamber.
摘要翻译：其中执行清洁方法的等离子体处理装置包括：具有含硅构件的等离子体产生室，用于通过激发处理气体在其中产生等离子体; 等离子体处理室，其经由分隔构件与等离子体产生室连通; 以及设置在等离子体发生室的电介质窗口的外侧的具有平面形状的高频天线。清洗方法包括在等离子体发生室中激发含氢处理气体进入等离子体，通过分隔构件将等离子体中的氢自由基引入等离子体处理室中，通过使氢自由基进入等离子体处理工艺作用于处理对象基板，卸载处理对象基板，以及通过将四氟（四氟甲烷）气体引入到等离子体产生室中来除去在等离子体发生室中产生的硅基沉积物。

73. 发明申请

US20120244716A1 SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM 有权
标题翻译：基板加工方法和储存介质
公开(公告)号：US20120244716A1
公开(公告)日：2012-09-27
申请号：US13425551
申请日：2012-03-21
申请人： Takashi Sone , Eiichi Nishimura
发明人： Takashi Sone , Eiichi Nishimura
IPC分类号： H01L21/308
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/32091 , H01L43/12
摘要： There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layer 38 having a certain pattern shape, a processing gas containing, at least, a carbon monoxide gas, a hydrogen gas, and a rare gas is used, and a ratio of a gas flow rate of the hydrogen gas to a total gas flow rate of the carbon monoxide gas and the hydrogen gas is in a range of from about 50% to about 75%.
摘要翻译：提供了能够在不使用卤素气体的情况下蚀刻至少含有铂的层的基板处理方法。当通过使用具有一定图案形状的钽（Ta）层38来蚀刻晶圆W上的铂 - 锰层时，使用至少含有一氧化碳气体，氢气和稀有气体的处理气体，并且氢气的气体流量与一氧化碳气体和氢气的总气体流量的比率在约50％至约75％的范围内。

74. 发明授权

US08273258B2 Fine pattern forming method 有权
标题翻译：精细图案形成方法
公开(公告)号：US08273258B2
公开(公告)日：2012-09-25
申请号：US12651519
申请日：2010-01-04
申请人： Takashi Sone , Eiichi Nishimura
发明人： Takashi Sone , Eiichi Nishimura
IPC分类号： C03C15/00 , B44C1/22
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , G03F7/427 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A disclosed fine pattern forming method includes steps of: forming patterns made of a first photoresist film, arranged at a first pitch on a film; trimming the patterns made of the first photoresist film; depositing a protection film on the patterns made of the first photoresist film on the trimmed patterns made of the first photoresist film, the protection film being made of reaction products of an etching gas, thereby obtaining first patterns; forming other patterns made of a second photoresist film, arranged at a second pitch, on the protection film, the other patterns made of the second photoresist film being shifted by half of the first pitch from the corresponding patterns made of the first photoresist film; trimming the other patterns made of the second photoresist film into second patterns; and etching the film using the first patterns and the second patterns.
摘要翻译：所公开的精细图案形成方法包括以下步骤：在膜上形成以第一间距布置的由第一光致抗蚀剂膜制成的图案; 修整由第一光致抗蚀剂膜制成的图案; 在由第一光致抗蚀剂膜制成的修剪图案上的由第一光致抗蚀剂膜制成的图案上形成保护膜，保护膜由蚀刻气体的反应产物制成，从而获得第一图案; 在保护膜上形成由第二间距布置的第二光致抗蚀剂膜制成的其它图案，由第二光致抗蚀剂膜制成的其它图案从由第一光致抗蚀剂膜制成的相应图案偏移了第一间距的一半; 将由第二光致抗蚀剂膜制成的其它图案修剪成第二图案; 并使用第一图案和第二图案蚀刻薄膜。

75. 发明授权

US08252698B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08252698B2
公开(公告)日：2012-08-28
申请号：US12558047
申请日：2009-09-11
申请人： Masato Kushibiki , Eiichi Nishimura
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： In a substrate processing method of processing a substrate in which a processing target layer, an intermediate layer, and a mask layer are stacked one on top of another, the mask layer having an opening that partially exposes the intermediate layer, a thickness of the mask layer is increased by depositing deposits on an upper surface of the mask layer with plasma generated from a mixed gas of SF6 gas and a depositive gas represented in a general equation, CxHyFz (where, x, y, and z are positive integers).
摘要翻译：在其中处理目标层，中间层和掩模层层叠在一起的衬底的衬底处理方法中，具有部分地暴露中间层的开口的掩模层，掩模的厚度通过在SF6气体和通式（C x H y F z（其中x，y和z是正整数）表示的沉积气体的混合气体产生的等离子体中，在掩模层的上表面上沉积沉积物来增加层。

76. 发明申请

US20120180475A1 ACTUATOR AND SHEET-SHAPED ACTUATOR 审中-公开
标题翻译：执行器和表格执行器
公开(公告)号：US20120180475A1
公开(公告)日：2012-07-19
申请号：US13387188
申请日：2010-09-28
申请人： Masahiro Shimizu , Shigekazu Komatsu , Eiichi Nishimura , Yoshio Kimura , Takahiko Ooasa , Hidenori Okuzaki
发明人： Masahiro Shimizu , Shigekazu Komatsu , Eiichi Nishimura , Yoshio Kimura , Takahiko Ooasa , Hidenori Okuzaki
IPC分类号： F15B21/06
CPC分类号： F03G7/005
摘要： An actuator 10 includes a main body 14 having a displacement unit 11 and electrodes 12 and 13 configured to apply a voltage to the displacement unit 11, the displacement unit being made of a mixture of a silicone-containing elastomer and an ionic liquid, and being displaced by applying a voltage between the electrodes; and a displacement transmission unit 15 configured to be displaced in an out-of-plane direction by displacement of the displacement unit 11.
摘要翻译：致动器10包括具有位移单元11的主体14和构造成向位移单元11施加电压的电极12和13，位移单元由含硅酮弹性体和离子液体的混合物构成，并且是通过在电极之间施加电压来移位; 以及位移传递单元15，被配置为通过位移单元11的位移在平面外方向上移位。

77. 发明授权

US08210742B2 Method and apparatus for detecting foreign matter attached to peripheral edge of substrate, and storage medium 有权
标题翻译：用于检测附着于基板周边的异物的方法和装置以及存储介质
公开(公告)号：US08210742B2
公开(公告)日：2012-07-03
申请号：US12506440
申请日：2009-07-21
申请人： Tsuyoshi Moriya , Eiichi Nishimura
发明人： Tsuyoshi Moriya , Eiichi Nishimura
IPC分类号： G01N25/72 , G01N21/94 , G01N21/952 , H01L21/302 , H01L21/66
CPC分类号： G01M99/002 , H01L22/12 , H01L22/24 , H01L2924/0002 , H01L2924/00
摘要： A foreign matter detecting method of detecting foreign matter attached to a peripheral edge of a substrate, which makes it possible to accurately detect foreign matter attached to the peripheral edge of the substrate even if the foreign matter is of a minute size below the detection limit of an existing measuring instrument, and which is highly versatile and suitable for mass production of substrates. The substrate is cooled to condense moisture around the foreign matter attached to the peripheral edge of the substrate, and then the condensed moisture is iced to grow an ice crystal. Then, the foreign matter attached to the peripheral edge of the substrate, which is emphasized by the ice crystal, is detected.
摘要翻译：检测附着于基板的周缘的异物的异物检测方法，即使异物的检测极限低于检测限的微小尺寸，也能够准确地检测附着在基板的周缘的异物现有的测量仪器，并且是高度通用性的并且适合于大量生产基板。将基板冷却以冷凝附着在基板的周边边缘的异物，然后冷凝的水分被冰化以生长冰晶。然后，检测附着在基板的周缘的异物，其被冰晶强调。

78. 发明申请

US20120031434A1 SUBSTRATE CLEANING METHOD 失效
标题翻译：基板清洗方法
公开(公告)号：US20120031434A1
公开(公告)日：2012-02-09
申请号：US13255723
申请日：2010-03-10
申请人： Hidefumi Matsui , Tsuyoshi Moriya , Eiichi Nishimura , Shinichi Kawaguchi , Jun Yamawaku , Kunio Miyauchi
发明人： Hidefumi Matsui , Tsuyoshi Moriya , Eiichi Nishimura , Shinichi Kawaguchi , Jun Yamawaku , Kunio Miyauchi
IPC分类号： B08B7/00 , B08B3/08 , H01L21/02
CPC分类号： H01L21/02101 , H01L21/02071 , H01L21/67051 , H01L21/67109
摘要： There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate.
摘要翻译：提供一种基板清洗方法，其能够以简单的构造在短时间内清洁其上形成微细图案的基板，而不会对微细图案产生有害影响。在该方法中，将基板从用于在基板表面上进行处理的处理室转移到用于清洁基板的清洁室。将基板冷却至清洁室内的温度。将超流体供给到基板的表面，并且当超流体从基板的表面流过时，精细图案中的污染物成分与超流体一起流出。

79. 发明授权

US07993540B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07993540B2
公开(公告)日：2011-08-09
申请号：US11770234
申请日：2007-06-28
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/67069 , H01L21/31116
摘要： A substrate processing method which is capable of easily removing residue caused by hydrofluoric acid. By the substrate processing method, a substrate is processed which has a thermal oxide film formed by a thermal oxidation process and a BPSG film containing impurities. In an HF gas feeding step, an HF gas is fed toward the substrate, and in a cleaning gas feeding step, a cleaning gas containing at least NH3 gas is fed toward the substrate fed with the HF gas.
摘要翻译：能够容易地除去由氢氟酸引起的残留物的基板处理方法。通过基板处理方法，处理具有通过热氧化工艺形成的热氧化膜和含有杂质的BPSG膜的基板。在HF气体供给工序中，向基板供给HF气体，在清洁气体供给工序中，向供给HF气体的基板供给至少含有NH 3气体的清洗气体。

80. 发明授权

US07985699B2 Substrate processing method and storage medium 有权
标题翻译：基板处理方法和存储介质
公开(公告)号：US07985699B2
公开(公告)日：2011-07-26
申请号：US11689272
申请日：2007-03-21
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： H01L21/469
CPC分类号： H01L21/3065 , H01L21/308 , H01L21/67069 , H01L21/67225 , H01L21/6831
摘要： A substrate processing method capable of preventing a substrate rear surface from being scratched when attracted onto an electrostatic chuck. In a coater/developer (11), a photocurable resin is coated onto a rear surface of a wafer (W), the resin is cured to form a resin protective film, and a resist is coated onto a front surface of the wafer. An exposing apparatus (12) subjects the resist to light exposure processing, irradiating ultraviolet light onto a resist portion of a pattern reversed with respect to a mask pattern. The coater/developer uses a washing liquid to remove the resist, thereby forming a resist film. In an etching apparatus (13), the front surface of the wafer is electrostatically attracted onto an electrostatic chuck (49) is subjected to RIE processing. In a washing apparatus (14), the resin protective film is dissolved and removed.
摘要翻译：一种基板处理方法，其能够防止当被吸引到静电卡盘上时基板后表面被划伤。在涂布机/显影剂（11）中，将光固化树脂涂布在晶片（W）的后表面上，树脂固化形成树脂保护膜，并将抗蚀剂涂布在晶片的前表面上。曝光装置（12）使抗蚀剂进行曝光处理，将紫外光照射到相对于掩模图案反转的图案的抗蚀剂部分上。涂布机/显影剂使用洗涤液除去抗蚀剂，从而形成抗蚀剂膜。在蚀刻装置（13）中，将静电吸附在静电吸盘（49）上的晶片的前表面进行RIE处理。在洗涤装置（14）中，树脂保护膜被溶解并除去。

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