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    • 73. 发明授权
    • Photodiode array device and method for producing same
    • 光电二极管阵列器件及其制造方法
    • US5436171A
    • 1995-07-25
    • US263079
    • 1994-06-21
    • Koichi Kudo
    • Koichi Kudo
    • G01J1/02H01L27/146H01L31/0352H01L31/10H01L21/22H01L21/302
    • H01L27/14643H01L31/03529Y02E10/50
    • The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is the yield of device fabrication improved but also the cost of the final product is reduced.
    • 改进的光电二极管阵列具有在具有氧化物膜2的半导体衬底1上具有排成一排的pn结的结构。该光电二极管阵列具有这样的表面图案,使n型杂质扩散层3和p型杂质扩散层 4以大致同心的方式布置或者与另一种扩散型的层交替的一种扩散型的层布置。 改进的制造方法包括将半导体衬底1上的氧化物膜2接合到n型半导体层3,然后将p型杂质扩散到n型半导体层3内以形成pn结,由此产生光电二极管 数组。 由此,提供了具有这样简单的结构的光电二极管阵列,不仅能够提高器件制造的成品率,而且降低成品的成本。