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71. 发明授权

US08795949B2 Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device 有权
标题翻译：抗蚀图案改善材料，形成抗蚀剂图案的方法，以及半导体器件的制造方法
公开(公告)号：US08795949B2
公开(公告)日：2014-08-05
申请号：US13242206
申请日：2011-09-23
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/31144 , H01L21/32139 , H01L21/76802
摘要： To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water: where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group; m is an integer of 1 to 3; and n is an integer of 3 to 30, where p is an integer of 8 to 20; q is an integer of 3 to 30; and r is an integer of 1 to 8.
摘要翻译：提供抗蚀剂图案改性材料，其含有下述通式（1）表示的化合物或下述通式（2）表示的化合物或其二者; 和水：其中R 1和R 2各自独立地为氢原子或C 1 -C 3烷基; m为1〜3的整数。 n为3〜30的整数，p为8〜20的整数， q为3〜30的整数， r为1〜8的整数。

72. 发明授权

US08652751B2 Resist composition, method for forming resist pattern, and method for producing electronic device 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法以及电子器件的制造方法
公开(公告)号：US08652751B2
公开(公告)日：2014-02-18
申请号：US12557211
申请日：2009-09-10
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/038 , G03F7/039 , G03F7/075 , G03F7/20 , G03F7/30
CPC分类号： H01L21/31144 , G03F7/0397 , G03F7/0757 , G03F7/2041 , H01L21/76802
摘要： A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.
摘要翻译：抗蚀剂组合物，其含有：具有至少可被取代基取代的烷基可溶性基团的硅化合物; 以及具有可被酸不稳定基团取代的碱溶性基团的树脂，其中抗蚀剂组合物被设计为进行浸渍光刻。

73. 发明申请

US20120156879A1 RESIST PATTERN IMPROVING MATERIAL, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：电阻型图案改善材料，形成电阻图案的方法和生产半导体器件的方法
公开(公告)号：US20120156879A1
公开(公告)日：2012-06-21
申请号：US13242206
申请日：2011-09-23
申请人： Miwa KOZAWA , Koji Nozaki
发明人： Miwa KOZAWA , Koji Nozaki
IPC分类号： H01L21/311 , C08L29/04 , G03F7/16 , C09D7/00 , C08L31/04 , C08L39/06 , C07C43/23 , C07C43/13 , C08K5/06 , C08L29/14
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/31144 , H01L21/32139 , H01L21/76802
摘要： To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water: where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group; m is an integer of 1 to 3; and n is an integer of 3 to 30, where p is an integer of 8 to 20; q is an integer of 3 to 30; and r is an integer of 1 to 8.
摘要翻译：提供抗蚀剂图案改性材料，其含有下述通式（1）表示的化合物或下述通式（2）表示的化合物或其二者; 和水：其中R 1和R 2各自独立地为氢原子或C 1 -C 3烷基; m为1〜3的整数。 n为3〜30的整数，p为8〜20的整数， q为3〜30的整数， r为1〜8的整数。

74. 发明申请

US20120126372A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于形成电阻图案的电阻型图案加厚材料及其制造方法及半导体器件及其制造方法
公开(公告)号：US20120126372A1
公开(公告)日：2012-05-24
申请号：US13361391
申请日：2012-01-30
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： H01L21/312 , G03F7/26 , H01L29/02
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/76816
摘要： A resist pattern thickening material is disclosed that can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size of the resist pattern; which has excellent etching resistance; and which is suited for forming a fine space pattern or the like, exceeding the exposure limits. Also disclosed is a process for forming a resist pattern and a method for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
摘要翻译：公开了可以利用ArF准分子激光的抗蚀剂图案增厚材料; 当施加在诸如具有线图案等的ArF抗蚀剂的抗蚀剂图案上时，可以使抗蚀剂图案增厚，而与抗蚀剂图案的尺寸无关; 具有优异的耐蚀性; 并且适合于形成超过曝光极限的精细空间图案等。还公开了形成抗蚀剂图案的方法和半导体器件的制造方法，其中适当地利用本发明的抗蚀剂图案增厚材料。

75. 发明申请

US20110250541A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN 有权
标题翻译：图案形成方法，制造半导体器件的方法和用于形成耐蚀图案的涂层的材料
公开(公告)号：US20110250541A1
公开(公告)日：2011-10-13
申请号：US13168472
申请日：2011-06-24
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/20 , F21V9/06
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/31144 , H01L21/76816
摘要： To provide a pattern forming method, which contains: forming a first resist pattern on a processing surface using a first resist composition; forming a coating layer using a coating material so as to cover a surface of the first resist pattern; applying a second resist composition over the first resist pattern above which the coating layer has been formed so as not to dissolve the first resist pattern with the second resist composition to thereby form a second resist film; and selectively exposing the second resist film to exposure light and developing the second resist film to thereby expose the first resist pattern to the air, as well as forming a second resist pattern in an area of the processing surface where the first resist pattern has not been formed.
摘要翻译：提供一种图案形成方法，其包括：使用第一抗蚀剂组合物在处理表面上形成第一抗蚀剂图案; 使用涂覆材料形成涂层以覆盖所述第一抗蚀剂图案的表面; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，在该第一抗蚀剂图案上方形成涂层，以便不与第二抗蚀剂组合物溶解第一抗蚀剂图案，从而形成第二抗蚀剂膜; 并且将所述第二抗蚀剂膜选择性地暴露于曝光光并显影所述第二抗蚀剂膜，从而将所述第一抗蚀剂图案暴露于空气，以及在所述第一抗蚀剂图案未被处理的所述处理表面的区域中形成第二抗蚀剂图案形成。

76. 发明授权

US07625688B2 Resist pattern thickening material, resist pattern and process for forming the same, and semiconductor device and process for manufacturing the same 有权
公开(公告)号：US07625688B2
公开(公告)日：2009-12-01
申请号：US11283720
申请日：2005-11-22
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： H01L27/105 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/313 , G11B5/3163 , H01L27/10844 , H01L27/10894 , H01L27/11526 , H01L27/11541 , H01L27/11543 , H01L28/10
摘要： The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

77. 发明授权

US07592127B2 Resist pattern thickening material, resist pattern and process for forming the same, and semiconductor device and process for manufacturing the same 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法，半导体器件及其制造方法
公开(公告)号：US07592127B2
公开(公告)日：2009-09-22
申请号：US10623679
申请日：2003-07-22
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： H01L27/105 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/313 , G11B5/3163 , H01L27/10844 , H01L27/10894 , H01L27/11526 , H01L27/11541 , H01L27/11543 , H01L28/10
摘要： The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.
摘要翻译：本发明提供一种抗蚀剂图案增厚材料等，其可以使抗蚀剂图案变厚并形成精细的空间图案。抗蚀剂图案增稠材料包含：树脂; 交联剂; 和选自阳离子表面活性剂，两性表面活性剂和选自烷氧基化物表面活性剂，脂肪酸酯表面活性剂，酰胺表面活性剂，醇表面活性剂和乙二胺表面活性剂的非离子表面活性剂中的至少一种。在形成本发明的抗蚀剂图案的工艺中，在形成抗蚀剂图案之后，将增厚材料施加到图案的表面上。本发明的半导体器件的制造方法包括：在下层形成抗蚀剂图案之后，将增厚材料涂布在图案的表面上以增厚图案; 以及通过使用图案通过蚀刻来图案化底层的步骤。

78. 发明申请

US20070224537A1 Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法和半导体器件及其制造方法
公开(公告)号：US20070224537A1
公开(公告)日：2007-09-27
申请号：US11476172
申请日：2006-06-28
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03C1/00
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0338 , H01L21/31144 , H01L21/32139 , Y10S430/106 , Y10S430/114
摘要： The present invention provides a resist composition which enables uniformly thickening a resist pattern with a resist pattern thickening material, regardless of the direction, spacing variations of the resist pattern, and the components of the resist pattern thickening material and enables forming a fine space pattern of resist, exceeding exposure limits of light sources of exposure devices at low cost, easily, and efficiently. The resist composition contains an alicyclic compound (melting point: 90° C. to 150° C.), and a resin. The method for manufacturing a semiconductor device includes forming a resist pattern on a surface of a workpiece to be processed by using a resist composition and applying a resist pattern thickening material on the surface of the workpiece so as to cover the surface of the resist pattern to thicken the resist pattern; and patterning the surface of the workpiece by etching thereof using the thickened resist pattern as a mask.
摘要翻译：本发明提供了一种抗蚀剂组合物，其可以与抗蚀剂图案增厚材料均匀地增厚抗蚀剂图案，而与抗蚀剂图案的方向，间隔变化以及抗蚀剂图案增厚材料的组分无关，并且能够形成精细的空间图案以低成本，容易且有效地抵抗曝光装置的光源的暴露极限。抗蚀剂组合物含有脂环族化合物（熔点：90〜150℃）和树脂。半导体器件的制造方法包括通过使用抗蚀剂组合物在待加工的工件的表面上形成抗蚀剂图案，并在工件的表面上涂覆抗蚀剂图案增厚材料，以将抗蚀剂图案的表面覆盖到增加抗蚀剂图案; 并通过使用增厚的抗蚀剂图案作为掩模将其蚀刻来对工件的表面进行图案化。

79. 发明申请

US20050031987A1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案形成工艺，半导体器件制造工艺
公开(公告)号：US20050031987A1
公开(公告)日：2005-02-10
申请号：US10909888
申请日：2004-08-03
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： H01L21/32 , G03F7/00 , G03F7/40 , G11B5/17 , G11B5/31 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/8247 , H01L27/115 , G03C1/76
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/313 , G11B5/3163 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139 , H01L27/115 , H01L27/11521 , H01L27/11543 , Y10S430/106 , Y10S430/114
摘要： The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
摘要翻译：本发明提供一种抗蚀剂图案增厚材料，其可以使抗蚀剂图案变厚并形成精细的空间图案，超过在图案化期间使用的曝光光的暴露极限。抗蚀剂图案增厚材料含有树脂和相转移催化剂。本发明还提供了形成抗蚀剂图案的方法和用于制造半导体器件的方法，其中适当地利用本发明的抗蚀剂图案增厚材料。

80. 发明授权

US06656659B1 Resist composition suitable for short wavelength exposure and resist pattern forming method 失效
标题翻译：抗蚀剂组合物适用于短波长曝光和抗蚀剂图案形成方法
公开(公告)号：US06656659B1
公开(公告)日：2003-12-02
申请号：US09080530
申请日：1998-05-18
申请人： Koji Nozaki , Ei Yano
发明人： Koji Nozaki , Ei Yano
IPC分类号： G03F7039
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A resist composition has a polymer containing a carboxyl group with a protective group at a side chain of a monomer unit, the polymer being insoluble to basic aqueous solution and becoming soluble to basic aqueous solution when the protective group of the carboxyl group is eliminated from the side chain, the protective group of the carboxyl group being represented by: where R is a hydrogen atom or a single-bonded hydrocarbon group, n is an integer 1 to 4, and R is bonded to a position other than the ester bonded position.
摘要翻译：抗蚀剂组合物具有在单体单元的侧链含有保护基的羧基的聚合物，该聚合物在碱性水溶液中不溶，并且当羧基的保护基从侧链，羧基的保护基由下式表示：其中R是氢原子或单键合烃基，n是1至4的整数，并且R结合到除了酯键合位置之外的位置。

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