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    • 73. 发明授权
    • Method and system for evaluating a defective ratio of products
    • 评估产品缺陷率的方法和系统
    • US06807453B1
    • 2004-10-19
    • US09408104
    • 1999-09-29
    • Tatsuya Suzuki
    • Tatsuya Suzuki
    • G06F1900
    • G06Q10/04G05B2219/32194G05B2219/32203Y02P90/22Y02P90/265
    • A defective ratio evaluation method includes the steps of classifying defective information describing a design structure of a product and manufacturing features which become product defective occurrence factors and making the defective information accessible; comparing design information of a product to be evaluated with the defective information and computing types of defective information and a number of defective information items included in the design information; computing, before beginning manufacture of the product to be evaluated and using the types of defective information and the number of defective information items thus computed, a degree of occurrence of an event in which the product to be evaluated becomes defective; and displaying the degree of defective occurrence thus computed.
    • 缺陷率评估方法包括对描述产品的设计结构的缺陷信息进行分类和成为产品缺陷发生因素的制造特征并使缺陷信息可访问的步骤; 将要评估的产品的设计信息与缺陷信息的计算类型和设计信息中包含的缺陷信息项的数量进行比较; 在开始制造要评估的产品和使用缺陷信息的类型和由此计算的缺陷信息项的数量之前,计算出要评估的产品变得有缺陷的事件的发生程度; 并显示如此计算的缺陷发生的程度。
    • 74. 发明授权
    • Method for washing wafer and apparatus used therefor
    • 洗涤晶片的方法及其使用的装置
    • US06582524B2
    • 2003-06-24
    • US09749236
    • 2000-12-27
    • Tatsuya Suzuki
    • Tatsuya Suzuki
    • C23G114
    • H01L21/02052B08B3/08C11D3/3947C11D7/06C11D11/0047Y10S134/902
    • A method including the consecutive steps of: dipping a wafer in a washing solution in a washing chamber; replacing the washing solution by a first chemical solution in the washing chamber receiving therein the wafer, the first chemical solution including at least one chemical; dipping the wafer in the first chemical solution after stopping the replacing; and replacing the first chemical solution by a second chemical solution including the at least one chemical and having a concentration lower than a concentration of said first chemical solution. The number of the particles remaining on the wafer is significantly reduced compared with a conventional method to improve the removing rate of the particles deposited onto the wafer.
    • 一种包括以下步骤的方法:将晶片浸入洗涤室中的洗涤溶液中; 在其中容纳晶片的洗涤室中用第一化学溶液代替洗涤溶液,所述第一化学溶液包括至少一种化学品; 停止更换后将晶片浸入第一种化学溶液中; 并且通过包含所述至少一种化学品的第二化学溶液代替所述第一化学溶液,并且其浓度低于所述第一化学溶液的浓度。 与提高沉积在晶片上的颗粒的去除速率的常规方法相比,残留在晶片上的颗粒数量明显减少。